MMBT3904-D . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MMBT3904-D
Código: 1AM
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.35 W
Tensión colector-base (Vcb): 60 V
Tensión colector-emisor (Vce): 40 V
Tensión emisor-base (Veb): 6 V
Corriente del colector DC máxima (Ic): 0.2 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 300 MHz
Capacitancia de salida (Cc): 4 pF
Ganancia de corriente contínua (hfe): 100
Paquete / Cubierta: SOT23
Búsqueda de reemplazo de transistor bipolar MMBT3904-D
MMBT3904-D Datasheet (PDF)
mmbt3904-d.pdf
SMD Type TransistorsNPN Transistors(KMBT3904-D)MMBT3904-DSOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13Features Complementary to MMBT3906-D1 2 Marking:1AM+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collectorAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector - Base Voltage VCBO 60 VCollector - Emitter Voltage VC
mmbt3904-g.pdf
General Purpose TransistorMMBT3904-G (NPN)RoHS DeviceFeaturesSOT-23 -Epitaxial planar die construction0.120 (3.04)0.110 (2.80) -As complementary type, the PNP3transistor MMBT3904-G is recommended0.055 (1.40)0.047 (1.20)1 20.080 (2.04)0.070 (1.78)Collector0.007 (0.18)3 0.003 (0.08)0.044 (1.11)0.104 (2.64)0.035 (0.89)0.083 (2.10)1Base0.004 (0.100)
mmbt3904-hf.pdf
General Purpose TransistorMMBT3904-HF (NPN)RoHS DeviceHalogen FreeSOT-23Features0.118(3.00)0.110(2.80) -Epitaxial planar die construction3 -As complementary type, the PNP0.055(1.40)0.047(1.20)transistor MMBT3904-HF is recommended1 20.006(0.15)0.079(2.00)Collector0.002(0.05)0.071(1.80)30.041(1.05) 0.100(2.55)0.035(0.90) 0.089(2.25)1Base0.004(0.10
mmbt3904-ms.pdf
www.msksemi.comMMBT3904-MSSemiconductor CompianceSemiconductor CompianceTRANSISTOR (NPN)FEATURES Complementary to MMBT3906-MSMAXIMUM RATINGS (Ta=25 unless otherwise noted) 1. BASE2. EMITTERSOT23 MARKING: 1AM3. COLLECTORMAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Volta
mmbt3904-t3 mmbt3904g-t3.pdf
MMBT3904GENERAL PURPOSE TRANSISTORS NPN Silicon FEATURES NPN Silicon Epitaxial Planar Transistor For Switching And Amplifier Applications Collector-emitter Voltage VCE=40V Collector Current IC=200mA MECHANICAL DATA C E Available in SOT-23 Package SolderabilityMIL-STD-202, Method 208 Full RoHS Compliance B ORDERING INFORMATION PART NUM
mmbt3904-l mmbt3904-h.pdf
Jingdao Microelectronics co.LTD MMBT3904MMBT3904SOT-23NPN TRANSISTOR3FEATURES Complementary to MMBT3906 1MAXIMUM RATINGS (Ta=25 unless otherwise noted)2SymbolParameter Value Unit1.BASECollectorBase Voltage VCBO 60 V2.EMITTERCollectorEmitter Voltage VCEO 40 V3.COLLECTOREmitterBase Voltage VEB
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: 2SA1428Y
History: 2SA1428Y
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