3CA1204 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: 3CA1204
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 20 W
   Tensión colector-base (Vcb): 60 V
   Tensión colector-emisor (Vce): 50 V
   Tensión emisor-base (Veb): 6 V
   Corriente del colector DC máxima (Ic): 8 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   Transición de frecuencia (ft): 130 MHz
   Capacitancia de salida (Cc): 95 pF
   Ganancia de corriente contínua (hfe): 70
   Paquete / Cubierta: TO252

Búsqueda de reemplazo de transistor bipolar 3CA1204

3CA1204 Datasheet (PDF)

..1. Size:261K lzg
2sb1204 3ca1204.pdf

2SB1204(3CA1204) PNP /SILICON PNP TRANSISTOR Purpose: Relay drivers, high-speed inverters, general high-current switching applications. :f TFeatures: Low V , high current and high f ,

8.1. Size:300K lzg
2sb1203 3ca1203.pdf

2SB1203(3CA1203) PNP /SILICON PNP TRANSISTOR Purpose: Relay drivers, high-speed inverters, general high-current switching applications. :f TFeatures: Low V , high current and high f ,

9.1. Size:108K china
3ca1225.pdf

LJ2015-453CA1225 PNP T =25 1.0AP WCT =25 15cI 1.5 ACT 150 jmT -55~150 stgV I =1mA 160 V(BR)CBO CE50V I =10mA 160 V(BR)CEO CE50 V I =1mA 5.0 V(BR)EBO EBI V =160V 1.0 ACBO CBI V =5V 1.0 A

9.2. Size:260K lzg
tip127f 3ca127f.pdf

TIP127F(3CA127F) PNP /SILICON PNP TRANSISTOR : Purpose: Medium power linear switching applications. : TIP122F(3DA122F) Features: Complement to TIP122F(3DA122F). /Absolute maximum ratings(Ta=25) Symbol Rating Unit V -100 V CBO V -100 V CEO V -5.0 V

9.3. Size:265K lzg
2sb1217 3ca1217.pdf

2SB1217(3CA1217) PNP /SILICON PNP TRANSISTOR : DC-DC Purpose:It is suitable for DC-DC converter,or driver of solenoid or motor. : ,,, 2SD1818(3DA1818) Features: Low V ,large current, high P ,complementary to 2SD1818(3DA1818). CE(sat) C

9.4. Size:246K lzg
2sb1237 3ca1237.pdf

2SB1237(3CA1237) PNP /SILICON PNP TRANSISTOR Purpose: Medium power amplifier applications. , 2SD1858(3DA1858) Features: Low saturation voltage, complements the 2SD1858(3DA1858). /Absolute maximum ratings(Ta=25) Symbol Rating Unit VCBO -40 V

9.5. Size:241K lzg
2sb1274 3ca1274.pdf

2SB1274(3CA1274) PNP /SILICON PNP TRANSISTOR Purpose: Low frequency power amplifier applications. Features: High V ,low saturation voltage, wide ASO. CEO/Absolute maximum ratings(Ta=25) Symbol Rating Unit VCBO

9.6. Size:299K lzg
2sb1240 3ca1240.pdf

2SB1240(3CA1240) PNP /SILICON PNP TRANSISTOR : Purpose: Medium power amplifier applications. - 2SD1862(3DA1862) Features: Low V ,complements the 2SD1862(3DA1862). CE(sat)/Absolute maximum ratings(Ta=25) Symbol Rating Unit V -40

9.7. Size:212K lzg
tip127 3ca127.pdf

TIP127(3CA127) PNP /SILICON PNP TRANSISTOR : Purpose: Medium power linear switching applications. : TIP122(3DA122) Features: Complement to TIP122(3DA122). /Absolute maximum ratings(Ta=25) Symbol Rating Unit V -100 V CBO V -100 V CEO V -5.0 V EBO

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: EMB11 | 2SD2689LS | 2SC4659 | BF420S | ASY72 | AUY35-4 | NSBC123JPDXV6

Liste

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