2N6576 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Order this documentMOTOROLAby 2N6576/DSEMICONDUCTOR TECHNICAL DATA2N65762N6577NPN Silicon Power Darlington2N6578TransistorsGeneralpurpose EpiBase power Darlington transistors, suitable for linear andswitching applications.15 AMPEREPOWER TRANSISTORS Replacement for 2N3055 and DriverNPN SILICON High Gain Darlington PerformanceDARLINGTON Builtin Dio

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JMnic Product Specification Silicon NPN Power Transistors 2N6576 2N6577 2N6578 DESCRIPTION With TO-3 package DARLINGTON High DC current gain APPLICATIONS Power switching Audio amplifiers Hammer drivers Series and shunt regulators PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol 3 CollectorAbsolute maximum ratings(T

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6576 2N6577 2N6578 DESCRIPTION With TO-3 package DARLINGTON High DC current gain APPLICATIONS Power switching Audio amplifiers Hammer drivers Series and shunt regulators PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol 3 CollectorAbsolute

2N6575Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99)6.35 (0.25) 26.67 (1.05)9.15 (0.36)Metal Package. 10.67 (0.42)11.18 (0.44) 1.52 (0.06)3.43 (0.135)1 2 Bipolar NPN Device. 3VCEO = 300V (case)3.84 (0.151)4.09 (0.161)7.92 (0.312) IC = 10A 12.70 (0.50) All Semelab hermetically sealed products can be processed in

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN SILICON PLANAR TRANSISTOR 2N657TO-39Metal Can PackageGeneral Purpose Transistor.ABSOLUTE MAXIMUM RATINGS (Ta=25C unless specified otherwise)DESCRIPTION SYMBOL VALUE UNITSVCEOCollector Emitter Voltage 100 VVCBOCollector Base Voltage 100 VVEBOEmitter Base Voltage 8.0 VICCol

isc Silicon NPN Power Transistor 2N6575DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 300V(Min.)CEOFast Switching SpeedHigh Current Capability100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for converters, inverters, pulse-width- modulatedregulators and a variety of power switch

isc Silicon NPN Power Transistor 2N6574DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 275V(Min.)CEOFast Switching SpeedHigh Current Capability100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for converters, inverters, pulse-width- modulatedregulators and a variety of power switch

isc Silicon NPN Power Transistor 2N6573DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 250V(Min.)CEOFast Switching SpeedHigh Current Capability100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for converters, inverters, pulse-width- modulatedregulators and a variety of power switch

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2N6579DESCRIPTIONExcellent Safe Operating AreaHigh Voltage,High SpeedLow Saturation VoltageCollector-Emitter Sustaining Voltage-: V = 350V(Min)CEO(SUS)Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSOff-line power suppliesSwitching amplifiersInverters/C