2N6582
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2N6582
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 125
W
Tensión colector-base (Vcb): 450
V
Tensión colector-emisor (Vce): 350
V
Tensión emisor-base (Veb): 9
V
Corriente del colector DC máxima (Ic): 10
A
Temperatura operativa máxima (Tj): 200
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 25
MHz
Capacitancia de salida (Cc): 250
pF
Ganancia de corriente contínua (hfe): 7
Paquete / Cubierta:
TO3
Búsqueda de reemplazo de transistor bipolar 2N6582
2N6582
Datasheet (PDF)
..1. Size:187K inchange semiconductor
2n6582.pdf 
isc Silicon NPN Power Transistor 2N6582DESCRIPTIONExcellent Safe Operating AreaCollector-Emitter Sustaining Voltage-: V = 350V(Min)CEO(SUS)High Current CapabilityCollector-Emitter Saturation Voltage-: V )= 1.5 V(Max)@ I = 10ACE(sat CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for linear amplifiers, s
9.1. Size:11K semelab
2n6583.pdf
2N6583Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99)6.35 (0.25) 26.67 (1.05)9.15 (0.36)Metal Package. 10.67 (0.42)11.18 (0.44) 1.52 (0.06)3.43 (0.135)1 2 Bipolar NPN Device. 3VCEO = 400V (case)3.84 (0.151)4.09 (0.161)7.92 (0.312) IC = 10A 12.70 (0.50) All Semelab hermetically sealed products can be processed in
9.2. Size:11K semelab
2n6581.pdf
2N6581Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99)6.35 (0.25) 26.67 (1.05)9.15 (0.36)Metal Package. 10.67 (0.42)11.18 (0.44) 1.52 (0.06)3.43 (0.135)1 2 Bipolar NPN Device. 3VCEO = 450V (case)3.84 (0.151)4.09 (0.161)7.92 (0.312) IC = 10A 12.70 (0.50) All Semelab hermetically sealed products can be processed in
9.3. Size:187K inchange semiconductor
2n6583.pdf
isc Silicon NPN Power Transistor 2N6583DESCRIPTIONExcellent Safe Operating AreaCollector-Emitter Sustaining Voltage-: V = 400V(Min)CEO(SUS)High Current CapabilityCollector-Emitter Saturation Voltage-: V )= 1.5 V(Max)@ I = 10ACE(sat CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for linear amplifiers, s
9.4. Size:187K inchange semiconductor
2n6584.pdf
isc Silicon NPN Power Transistor 2N6584DESCRIPTIONExcellent Safe Operating AreaCollector-Emitter Sustaining Voltage-: V = 450V(Min)CEO(SUS)High Current CapabilityCollector-Emitter Saturation Voltage-: V )= 1.5 V(Max)@ I = 10ACE(sat CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for linear amplifiers, s
Otros transistores... 2N3192
, 2N3193
, 2N3194
, 2N3195
, 2N3196
, 2N3197
, 2N3198
, 2N3199
, BC327
, 2N320
, 2N3200
, 2N3201
, 2N3202
, 2N3203
, 2N3204
, 2N3205
, 2N3206
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