2N6587 Todos los transistores

 

2N6587 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2N6587
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 125 W
   Tensión colector-base (Vcb): 550 V
   Tensión colector-emisor (Vce): 450 V
   Tensión emisor-base (Veb): 9 V
   Corriente del colector DC máxima (Ic): 10 A
   Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 25 MHz
   Capacitancia de salida (Cc): 250 pF
   Ganancia de corriente contínua (hfe): 7
   Paquete / Cubierta: TO62
 

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2N6587 Datasheet (PDF)

 9.1. Size:11K  semelab
 2n6583.pdf pdf_icon

2N6587

2N6583Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99)6.35 (0.25) 26.67 (1.05)9.15 (0.36)Metal Package. 10.67 (0.42)11.18 (0.44) 1.52 (0.06)3.43 (0.135)1 2 Bipolar NPN Device. 3VCEO = 400V (case)3.84 (0.151)4.09 (0.161)7.92 (0.312) IC = 10A 12.70 (0.50) All Semelab hermetically sealed products can be processed in

 9.2. Size:11K  semelab
 2n6581.pdf pdf_icon

2N6587

2N6581Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99)6.35 (0.25) 26.67 (1.05)9.15 (0.36)Metal Package. 10.67 (0.42)11.18 (0.44) 1.52 (0.06)3.43 (0.135)1 2 Bipolar NPN Device. 3VCEO = 450V (case)3.84 (0.151)4.09 (0.161)7.92 (0.312) IC = 10A 12.70 (0.50) All Semelab hermetically sealed products can be processed in

 9.3. Size:187K  inchange semiconductor
 2n6583.pdf pdf_icon

2N6587

isc Silicon NPN Power Transistor 2N6583DESCRIPTIONExcellent Safe Operating AreaCollector-Emitter Sustaining Voltage-: V = 400V(Min)CEO(SUS)High Current CapabilityCollector-Emitter Saturation Voltage-: V )= 1.5 V(Max)@ I = 10ACE(sat CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for linear amplifiers, s

 9.4. Size:187K  inchange semiconductor
 2n6584.pdf pdf_icon

2N6587

isc Silicon NPN Power Transistor 2N6584DESCRIPTIONExcellent Safe Operating AreaCollector-Emitter Sustaining Voltage-: V = 450V(Min)CEO(SUS)High Current CapabilityCollector-Emitter Saturation Voltage-: V )= 1.5 V(Max)@ I = 10ACE(sat CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for linear amplifiers, s

MOSTRAR MÁS

Otros transistores... 2N658 , 2N6580 , 2N6581 , 2N6582 , 2N6583 , 2N6584 , 2N6585 , 2N6586 , BC549 , 2N6588 , 2N6589 , 2N659 , 2N6590 , 2N6591 , 2N6592 , 2N6593 , 2N6594 .

History: SGS111 | NKT210 | DTC015EEB | BUL654 | EN930 | EQS0196 | BTP2907SL3

 

 
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