2N918DCSM Todos los transistores

 

2N918DCSM Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2N918DCSM

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.2 W

Tensión colector-emisor (Vce): 15 V

Corriente del colector DC máxima (Ic): 0.003 A

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 600 MHz

Ganancia de corriente contínua (hFE): 20

Encapsulados: LCC2

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2N918DCSM datasheet

 ..1. Size:11K  semelab
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2N918DCSM

2N918DCSM Dimensions in mm (inches). Dual Bipolar NPN Devices in a hermetically sealed LCC2 Ceramic Surface Mount Package for High Reliability 1.40 0.15 2.29 0.20 1.65 0.13 (0.055 0.006) (0.09 0.008) (0.065 0.005) Applications 2 3 1 4 Dual Bipolar NPN Devices. A 0.23 6 5 rad. (0.009) V = 15V CEO 6.22 0.13 A = 1.27 0.13 I = 0.003A C (0.

 9.1. Size:115K  st
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2N918DCSM

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

 9.2. Size:62K  central
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2N918DCSM

145 Adams Avenue, Hauppauge, NY 11788 USA Tel (631) 435-1110 Fax (631) 435-1824

 9.3. Size:14K  semelab
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2N918DCSM

2N918ADCSM ELECTRICAL CHARACTERISTICS (Tcase = 25 C unless otherwise stated) Parameter Test Conditions Min. Typ. Max. Unit VCB=15V IE=0 10 nA ICBO Collector Cutoff Current Ta=150 C 1 A V(BR)CBO IC=1 A IE=0 Collector Base Breakdown Voltage 30 VCEO(sus) IC=3mA IB=0 Collector Emitter Sustaining Voltage 15 V(BR)EBO IE=10 A IC=0 Emitter Base Breakdown Voltag

Otros transistores... 2N6927A , 2N6306T1 , 2N6306T3 , 2N6308T1 , 2N6308T3 , 2N916CSM , 2N916DCSM , 2N918ADCSM , SS8050 , 2N930UB , 2N6338X , 2N6340X , 2N6341X , 2N6385SMD05 , 2N6517M , 3CG6517M , 2N6546T1 .

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