2N6517M Todos los transistores

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2N6517M . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2N6517M

Código: H3D

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.3 W

Tensión colector-base (Vcb): 350 V

Tensión colector-emisor (Vce): 350 V

Tensión emisor-base (Veb): 6 V

Corriente del colector DC máxima (Ic): 0.5 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Producto de corriente -- ganancia — ancho de banda (ft): 40 MHz

Capacitancia de salida (Cc): 6 pF

Ganancia de corriente contínua (hfe): 15

Empaquetado / Estuche: SOT23

Búsqueda de reemplazo de transistor bipolar 2N6517M

 

2N6517M Datasheet (PDF)

1.1. 2n6517m 3cg6517m.pdf Size:264K _update

2N6517M
2N6517M

2N6517M(3CG6517M) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途:用于高压电路。/Purpose: High voltage application. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 350 V CBO V 350 V CEO V 6.0 V EBO I 500 mA C P 300 mW C T 150 ℃ j T -55~150 ℃ stg 电性能参数/Electrical characteristics(T

4.1. 2n6515 2n6516 2n6517 2n6519 2n6520.pdf Size:329K _motorola

2N6517M
2N6517M

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2N6515/D High Voltage Transistors NPN 2N6515 * COLLECTOR COLLECTOR thru 2N6517 3 3 PNP 2 2 2N6519 BASE BASE NPN PNP 2N6520 * 1 1 Voltage and current are negative EMITTER EMITTER for PNP transistors MAXIMUM RATINGS *Motorola Preferred Device 2N6516 2N6517 2N6519 2N6520 Rating Symbol 2N6515 Unit CollectorEmitter

4.2. 2n6515 2n6517 2n6519 2n6520.pdf Size:229K _motorola

2N6517M
2N6517M

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2N6515/D High Voltage Transistors NPN COLLECTOR COLLECTOR 2N6515 3 3 2N6517 2 2 PNP BASE BASE NPN PNP 2N6519 1 1 EMITTER EMITTER 2N6520 MAXIMUM RATINGS Voltage and current are negative 2N6517 for PNP transistors 2N6520 Rating Symbol 2N6515 2N6519 Unit CollectorEmitter Voltage VCEO 250 300 350 Vdc CollectorBase

4.3. 2n6517.pdf Size:175K _fairchild_semi

2N6517M
2N6517M

August 2010 2N6517 NPN Epitaxial Silicon Transistor Features High Voltage Transistor Collector Dissipation: PC(max) = 625mW Complement to 2N6520 Suffix -C means Center Collector (1. Emitter 2. Collector 3. Base) TO-92 1 1. Emitter 2. Base 3. Collector Absolute Maximum Ratings Ta = 25C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 2N6517 350

4.4. 2n6517.pdf Size:21K _samsung

2N6517M

2N6517 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR TO-92 Collector-Emitter Voltage: VCEO=350V Collector Dissipation: PC (max)=625mW ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 350 V Collector-Emitter Voltage VCEO 350 V Emitter-Base Voltage VEBO 6 V Collector Current IC 500 mA Collector Dissipation PC 625 mW Juncti

4.5. 2n6515 2n6517 2n6520.pdf Size:116K _onsemi

2N6517M
2N6517M

NPN - 2N6515, 2N6517; PNP - 2N6520 High Voltage Transistors NPN and PNP Features http://onsemi.com Voltage and Current are Negative for PNP Transistors COLLECTOR These are Pb-Free Devices* 3 2 BASE MAXIMUM RATINGS COLLECTOR NPN Rating Symbol Value Unit 3 1 Collector - Emitter Voltage VCEO Vdc EMITTER 2N6515 250 2 2N6517, 2N6520 350 BASE Collector - Base Voltage VCBO Vdc

4.6. 2n6517.pdf Size:130K _secos

2N6517M

2N6517 0.5 A, 350V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES TO-92 ? High Voltage Transistors G H ? Complement of the 2N6520 ?Emitter ?Base J ?Collector A D Millimeter B REF. Collector Min. Max. ?? A 4.40 4.70 K B 4.30 4.70 C 12.70 - D 3.30 3.81 ?? E 0.36 0.56

4.7. 2n6517.pdf Size:160K _first_silicon

2N6517M

SEMICONDUCTOR 2N6517 TECHNICAL DATA B C 2N6517 TRANSISTOR (NPN) DIM MILLIMETERS A 4.70 MAX E FEATURES G B 4.80 MAX C 3.70 MAX D Complement To 2N6520 D 0.55 MAX E 1.00 F 1.27 G 0.85 H 0.45 _ H J 14.00 0.50 L 2.30 F F M 0.51 MAX 1 2 3 1. EMITTER 2. BASE 3. COLLECTOR TO-92 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collecto

Otros transistores... 2N916DCSM , 2N918ADCSM , 2N918DCSM , 2N930UB , 2N6338X , 2N6340X , 2N6341X , 2N6385SMD05 , BC109C , 3CG6517M , 2N6546T1 , 2N6546T3 , 2N6547T1 , 2N6547T3 , 2N6933 , 2N6934 , 2N6935 .

 


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Introduzca al menos 1 números o letras