2N6935 Datasheet. Equivalente

 ..1. Size:191K  inchange semiconductor
 2n6935.pdf

isc Silicon NPN Power Transistor 2N6935 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 400V(Min) (BR)CEO High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for off-line power supplies switching regulator and general purpose applications. ABSOLUTE MAXIMUM RA

 ..2. Size:153K  inchange semiconductor
 2n6933 2n6934 2n6935.pdf

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2N6933/34/35 DESCRIPTION High Switching Speed High Voltage APPLICATIONS Off-line power supplies High voltage inverters Switching regulators ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT 2N6933 450 VCEV Collector-Emitter 2N6934 550 V Voltage (VBE= -1.5V) 2N6935 6

 0.1. Size:72K  njs
 2n6935-34-33.pdf

 9.1. Size:156K  jmnic
 2n6931 2n6932.pdf

JMnic Product Specification Silicon NPN Power Transistors 2N6931 2N6932 DESCRIPTION With TO-3PN package High voltage ,high speed APPLICATIONS Off-line power supplies High-voltage inverters Switching regulators PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter Absolute maximum rat

 9.2. Size:191K  inchange semiconductor
 2n6931.pdf

isc Silicon NPN Power Transistor 2N6931 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 300V(Min) (BR)CEO High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for off-line power supplies switching regulator and general purpose applications. ABSOLUTE MAXIMUM RA

 9.3. Size:140K  inchange semiconductor
 2n6933 2n6934.pdf

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2N6933 2N6934 DESCRIPTION With TO-3PN package High voltage ,high speed APPLICATIONS Off-line power supplies High-voltage inverters Switching regulators PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter Abs

 9.4. Size:198K  inchange semiconductor
 2n6933.pdf

isc Silicon NPN Power Transistor 2N6933 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 300V(Min) (BR)CEO High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for off-line power supplies switching regulator and general purpose applications. ABSOLUTE MAXIMUM RA

 9.5. Size:185K  inchange semiconductor
 2n6932.pdf

isc Silicon NPN Power Transistor 2N6932 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 400V(Min) (BR)CEO High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for off-line power supplies switching regulator and general purpose applications. ABSOLUTE MAXIMUM RA

 9.6. Size:120K  inchange semiconductor
 2n6931 2n6932.pdf

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6931 2N6932 DESCRIPTION With TO-3PN package High voltage ,high speed APPLICATIONS Off-line power supplies High-voltage inverters Switching regulators PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter Abs

 9.7. Size:183K  inchange semiconductor
 2n6934.pdf

isc Silicon NPN Power Transistor 2N6934 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 350V(Min) (BR)CEO High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for off-line power supplies switching regulator and general purpose applications. ABSOLUTE MAXIMUM RA