2N869AX Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2N869AX

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.36 W

Tensión colector-emisor (Vce): 25 V

Corriente del colector DC máxima (Ic): 0.1 A

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 100 MHz

Ganancia de corriente contínua (hFE): 20

Encapsulados: TO18

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2N869AX datasheet

 ..1. Size:10K  semelab
 2n869ax.pdf pdf_icon

2N869AX

2N869AX Dimensions in mm (inches). Bipolar PNP Device in a 5.84 (0.230) 5.31 (0.209) Hermetically sealed TO18 4.95 (0.195) 4.52 (0.178) Metal Package. Bipolar PNP Device. VCEO = 25V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.1A 2.54 (0.100) All Semelab hermetically sealed products Nom. can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JA

 0.1. Size:10K  semelab
 2n869axdcsm.pdf pdf_icon

2N869AX

2N869AXDCSM Dimensions in mm (inches). Dual Bipolar PNP Devices in a hermetically sealed LCC2 Ceramic Surface Mount Package for High Reliability 1.40 0.15 2.29 0.20 1.65 0.13 (0.055 0.006) (0.09 0.008) (0.065 0.005) Applications 2 3 1 4 Dual Bipolar PNP Devices. A 0.23 6 5 rad. (0.009) V = 25V CEO 6.22 0.13 A = 1.27 0.13 I = 0.1A C (0.

 0.2. Size:10K  semelab
 2n869axcsm.pdf pdf_icon

2N869AX

2N869AXCSM Dimensions in mm (inches). Bipolar PNP Device in a 0.51 0.10 Hermetically sealed LCC1 (0.02 0.004) 0.31 rad. (0.012) Ceramic Surface Mount 3 Package for High Reliability Applications 21 1.91 0.10 (0.075 0.004) A 0.31 rad. Bipolar PNP Device. (0.012) 3.05 0.13 (0.12 0.005) 1.40 (0.055) 1.02 0.10 max. VCEO = 25V A = (0.04 0.00

Otros transistores... 2N6546T1, 2N6546T3, 2N6547T1, 2N6547T3, 2N6933, 2N6934, 2N6935, 2N6987U, NJW0281G, 2N869AXCSM, 2N869AXDCSM, 2N6676T1, 2N6676T3, 2N6678M3A, 2N6678T1, 2N6678T3, 2STBN15D100