2N869AXDCSM Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2N869AXDCSM
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.36 W
Tensión colector-emisor (Vce): 25 V
Corriente del colector DC máxima (Ic): 0.1 A
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 100 MHz
Ganancia de corriente contínua (hFE): 20
Encapsulados: LCC2
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2N869AXDCSM datasheet
2n869axdcsm.pdf
2N869AXDCSM Dimensions in mm (inches). Dual Bipolar PNP Devices in a hermetically sealed LCC2 Ceramic Surface Mount Package for High Reliability 1.40 0.15 2.29 0.20 1.65 0.13 (0.055 0.006) (0.09 0.008) (0.065 0.005) Applications 2 3 1 4 Dual Bipolar PNP Devices. A 0.23 6 5 rad. (0.009) V = 25V CEO 6.22 0.13 A = 1.27 0.13 I = 0.1A C (0.
2n869ax.pdf
2N869AX Dimensions in mm (inches). Bipolar PNP Device in a 5.84 (0.230) 5.31 (0.209) Hermetically sealed TO18 4.95 (0.195) 4.52 (0.178) Metal Package. Bipolar PNP Device. VCEO = 25V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.1A 2.54 (0.100) All Semelab hermetically sealed products Nom. can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JA
2n869axcsm.pdf
2N869AXCSM Dimensions in mm (inches). Bipolar PNP Device in a 0.51 0.10 Hermetically sealed LCC1 (0.02 0.004) 0.31 rad. (0.012) Ceramic Surface Mount 3 Package for High Reliability Applications 21 1.91 0.10 (0.075 0.004) A 0.31 rad. Bipolar PNP Device. (0.012) 3.05 0.13 (0.12 0.005) 1.40 (0.055) 1.02 0.10 max. VCEO = 25V A = (0.04 0.00
Otros transistores... 2N6547T1 , 2N6547T3 , 2N6933 , 2N6934 , 2N6935 , 2N6987U , 2N869AX , 2N869AXCSM , 2SD669A , 2N6676T1 , 2N6676T3 , 2N6678M3A , 2N6678T1 , 2N6678T3 , 2STBN15D100 , 2STD1360 , 2STD2360 .
History: 92GE487 | BSW72 | 2SA1050A | 2SC2757T34 | BSV26 | ZTX212AM | BSW34
History: 92GE487 | BSW72 | 2SA1050A | 2SC2757T34 | BSV26 | ZTX212AM | BSW34
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