2N869AXDCSM Todos los transistores

 

2N869AXDCSM Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2N869AXDCSM

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.36 W

Tensión colector-emisor (Vce): 25 V

Corriente del colector DC máxima (Ic): 0.1 A

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 100 MHz

Ganancia de corriente contínua (hFE): 20

Encapsulados: LCC2

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2N869AXDCSM datasheet

 ..1. Size:10K  semelab
2n869axdcsm.pdf pdf_icon

2N869AXDCSM

2N869AXDCSM Dimensions in mm (inches). Dual Bipolar PNP Devices in a hermetically sealed LCC2 Ceramic Surface Mount Package for High Reliability 1.40 0.15 2.29 0.20 1.65 0.13 (0.055 0.006) (0.09 0.008) (0.065 0.005) Applications 2 3 1 4 Dual Bipolar PNP Devices. A 0.23 6 5 rad. (0.009) V = 25V CEO 6.22 0.13 A = 1.27 0.13 I = 0.1A C (0.

 7.1. Size:10K  semelab
2n869ax.pdf pdf_icon

2N869AXDCSM

2N869AX Dimensions in mm (inches). Bipolar PNP Device in a 5.84 (0.230) 5.31 (0.209) Hermetically sealed TO18 4.95 (0.195) 4.52 (0.178) Metal Package. Bipolar PNP Device. VCEO = 25V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.1A 2.54 (0.100) All Semelab hermetically sealed products Nom. can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JA

 7.2. Size:10K  semelab
2n869axcsm.pdf pdf_icon

2N869AXDCSM

2N869AXCSM Dimensions in mm (inches). Bipolar PNP Device in a 0.51 0.10 Hermetically sealed LCC1 (0.02 0.004) 0.31 rad. (0.012) Ceramic Surface Mount 3 Package for High Reliability Applications 21 1.91 0.10 (0.075 0.004) A 0.31 rad. Bipolar PNP Device. (0.012) 3.05 0.13 (0.12 0.005) 1.40 (0.055) 1.02 0.10 max. VCEO = 25V A = (0.04 0.00

Otros transistores... 2N6547T1 , 2N6547T3 , 2N6933 , 2N6934 , 2N6935 , 2N6987U , 2N869AX , 2N869AXCSM , 2SD669A , 2N6676T1 , 2N6676T3 , 2N6678M3A , 2N6678T1 , 2N6678T3 , 2STBN15D100 , 2STD1360 , 2STD2360 .

History: 92GE487 | BSW72 | 2SA1050A | 2SC2757T34 | BSV26 | ZTX212AM | BSW34

 

 

 

 

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