PZT2222 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

NPN Silicon Switching Transistors PZT 2222PZT 2222 A High DC current gain: 0.1 mA to 500 mA Low collector-emitter saturation voltage Complementary types: PZT 2907 (PNP)PZT 2907 A (PNP)Type Marking Ordering Code Pin Configuration Package1)(tape and reel) 1 2 3 4PZT 2222 ZT 2222 Q62702-Z2026 B C E C SOT-223PZT 2222 A ZT 2222 A Q62702-Z2027Maximum RatingsParameter Symbol Valu

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby PZT2222AT1/DNPN Silicon PlanarPZT2222AT1Epitaxial TransistorMotorola Preferred DeviceThis NPN Silicon Epitaxial transistor is designed for use in linear and switchingapplications. The device is housed in the SOT-223 package which is designed formedium power surface mount applications.SOT-223 PACKAGE PNP Complem

DISCRETE SEMICONDUCTORSDATA SHEEThandbook, halfpageM3D087PZT2222ANPN switching transistor1999 Apr 14Product specificationSupersedes data of 1997 Jun 02Philips Semiconductors Product specificationNPN switching transistor PZT2222AFEATURES PINNING High current (max. 600 mA)PIN DESCRIPTION Low voltage (max. 40 V).1 base2, 4 collectorAPPLICATIONS3 emitter

DISCRETE SEMICONDUCTORS DATA SHEEThandbook, halfpageM3D087PZT2222ANPN switching transistorProduct data sheet 1999 Apr 14Supersedes data of 1997 Jun 02 NXP Semiconductors Product data sheetNPN switching transistor PZT2222AFEATURES PINNING High current (max. 600 mA)PIN DESCRIPTION Low voltage (max. 40 V).1 base2, 4 collectorAPPLICATIONS3 emitter Swi

August 2010PN2222A / MMBT2222A / PZT2222ANPN General Purpose AmplifierFeatures This device is for use as a medium power amplifier and switch requiring collector currents up to 500mA. Sourced from process 19.PN2222A MMBT2222A PZT2222ACCEECBTO-92 SOT-23 SOT-223BMark:1PEBCAbsolute Maximum Ratings * Ta = 25C unless otherwise noted Symbol Parameter Value U

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

PZT2222AT1NPN Silicon PlanarEpitaxial TransistorThis NPN Silicon Epitaxial transistor is designed for use in linearand switching applications. The device is housed in the SOT--223package which is designed for medium power surface mounthttp://onsemi.comapplications.Features SOT--223 PACKAGE PNP Complement is PZT2907AT1 NPN SILICON TRANSISTOR The SOT--223 Package Can be

PZT2222ANPN Silicon PlanarEpitaxial TransistorThis NPN Silicon Epitaxial transistor is designed for use in linearand switching applications. The device is housed in the SOT-223package which is designed for medium power surface mountwww.onsemi.comapplications.Features SOT-223 PACKAGE PNP Complement is PZT2907AT1 NPN SILICON TRANSISTOR The SOT-223 Package Can be Soldered

UNISONIC TECHNOLOGIES CO., LTD PZT2222A NPN SILICON TRANSISTOR NPN GENERAL PURPOSE AMPLIFIER FEATURES * This device is for use as a medium power amplifier and switch requiring collector currents up to 500mA. 1SOT-223 ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 PZT2222AL-AA3-R PZT2222AG-AA3-R SOT-223 B C E Tape Ree

PZT2222ANPN SiliconElektronische BauelementeGeneral Purpose TransistorRoHS Compliant ProductSOT-223 C 1. BASE 2. COLLECTORFEATURES 3. EMITTERE CPower dissipationB PCM : 1 W Tamb=25 Collector currentICM : 0.6 A Collector-base voltage V(BR)CBO : 75 V Operating and stora

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-223 Plastic-Encapsulate Transistors PZT2222A TRANSISTOR (NPN) SOT-223 FEATURES Epitaxial planar die construction Complementary PNP Type available (PZT2907A) 1. BASE MARKING: 2. COLLECTOR 3. EMITTERSolid dot = Green molding compound device, if none,the normal device. MAXIMUM RATINGS (Ta=25 unless otherwis

PZT2222A SOT-223 Transistor(NPN)1. BASE SOT-2232. COLLECTOR 1 3. EMITTER Features Epitaxial planar die construction Complementary PNP Type available (PZT2907A) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 75 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6 V Dimensions in inches and

PZT2222ANPN Silicon Planar Epitaxial TransistorCOLLECTOR2, 4 SOT-22341. BASE BASE2.COLLECTOR1 13.EMITTER24.COLLECTOR33EM ITTERABSOLUTE MAXIMUM RATINGS (Ta=25 C)Rating SymbolValue UnitCollector-Emitter Voltage VCEO 40 VdcCollector-Base Voltage VCBOVdc75Emitter-Base Voltage VEBOVdc6.0Collector Current (DC) IC(DC)Adc0.61.5Total Device D

Spec. No. : C825L3 Issued Date : 2006.04.25 CYStech Electronics Corp.Revised Date : Page No. : 1/4 NPN Epitaxial Planar Transistor PZT2222AL3 Features High current, max. 600mA Low voltage, max. 40V Pb-free package Applications Switching and linear amplification Symbol Outline PZT2222AL3 SOT-223 C E C BBase B CCollector EEmitter

SMD Type TransistorsNPN TransistorsPZT2222A (KZT2222A)Unit:mmSOT-2236.500.23.000.1 Features4 Epitaxial planar die construction Complementary to PZT2907A1 2 30.2502.30 (typ)Gauge Plane1.Base 2.Collector0.700.13.Emitter4.60 (typ) 4.Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VC

PZT2222 / PZT2222APZT2222 / PZT2222ASuface Mount Si-Epitaxial Planar Switching TransistorsNPN NPNSi-Epitaxie-Planar-Schalttransistoren fr die OberflchenmontageVersion 2006-05-09Power dissipation 1.3 W6.50.2Verlustleistung30.1 1.65Plastic case SOT-2234KunststoffgehuseTypeWeight approx. 0.04 gCodeGewicht ca.1 2 30.7Plastic material has UL classifica