PZT2222 Todos los transistores

NPN Silicon Switching Transistors PZT 2222 PZT 2222 A High DC current gain 0.1 mA to 500 mA Low collector-emitter saturation voltage Complementary types PZT 2907 (PNP) PZT 2907 A (PNP) Type Marking Ordering Code Pin Configuration Package1) (tape and reel) 1 2 3 4 PZT 2222 ZT 2222 Q62702-Z2026 B C E C SOT-223 PZT 2222 A ZT 2222 A Q62702-Z2027 Maximum Ratings Parameter Symbol Valu

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by PZT2222AT1/D NPN Silicon Planar PZT2222AT1 Epitaxial Transistor Motorola Preferred Device This NPN Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT-223 package which is designed for medium power surface mount applications. SOT-223 PACKAGE PNP Complem

DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D087 PZT2222A NPN switching transistor 1999 Apr 14 Product specification Supersedes data of 1997 Jun 02 Philips Semiconductors Product specification NPN switching transistor PZT2222A FEATURES PINNING High current (max. 600 mA) PIN DESCRIPTION Low voltage (max. 40 V). 1 base 2, 4 collector APPLICATIONS 3 emitter

DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D087 PZT2222A NPN switching transistor Product data sheet 1999 Apr 14 Supersedes data of 1997 Jun 02 NXP Semiconductors Product data sheet NPN switching transistor PZT2222A FEATURES PINNING High current (max. 600 mA) PIN DESCRIPTION Low voltage (max. 40 V). 1 base 2, 4 collector APPLICATIONS 3 emitter Swi

August 2010 PN2222A / MMBT2222A / PZT2222A NPN General Purpose Amplifier Features This device is for use as a medium power amplifier and switch requiring collector currents up to 500mA. Sourced from process 19. PN2222A MMBT2222A PZT2222A C C E E C B TO-92 SOT-23 SOT-223 B Mark 1P EBC Absolute Maximum Ratings * Ta = 25 C unless otherwise noted Symbol Parameter Value U

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

PZT2222AT1 NPN Silicon Planar Epitaxial Transistor This NPN Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT--223 package which is designed for medium power surface mount http //onsemi.com applications. Features SOT--223 PACKAGE PNP Complement is PZT2907AT1 NPN SILICON TRANSISTOR The SOT--223 Package Can be

PZT2222A NPN Silicon Planar Epitaxial Transistor This NPN Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT-223 package which is designed for medium power surface mount www.onsemi.com applications. Features SOT-223 PACKAGE PNP Complement is PZT2907AT1 NPN SILICON TRANSISTOR The SOT-223 Package Can be Soldered

UNISONIC TECHNOLOGIES CO., LTD PZT2222A NPN SILICON TRANSISTOR NPN GENERAL PURPOSE AMPLIFIER FEATURES * This device is for use as a medium power amplifier and switch requiring collector currents up to 500mA. 1 SOT-223 ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 PZT2222AL-AA3-R PZT2222AG-AA3-R SOT-223 B C E Tape Ree

PZT2222A NPN Silicon Elektronische Bauelemente General Purpose Transistor RoHS Compliant Product SOT-223 C 1. BASE 2. COLLECTOR FEATURES 3. EMITTER E C Power dissipation B P CM 1 W Tamb=25 Collector current I CM 0.6 A Collector-base voltage V(BR)CBO 75 V Operating and stora

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-223 Plastic-Encapsulate Transistors PZT2222A TRANSISTOR (NPN) SOT-223 FEATURES Epitaxial planar die construction Complementary PNP Type available (PZT2907A) 1. BASE MARKING 2. COLLECTOR 3. EMITTER Solid dot = Green molding compound device, if none,the normal device. MAXIMUM RATINGS (Ta=25 unless otherwis

PZT2222A SOT-223 Transistor(NPN) 1. BASE SOT-223 2. COLLECTOR 1 3. EMITTER Features Epitaxial planar die construction Complementary PNP Type available (PZT2907A) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 75 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6 V Dimensions in inches and

PZT2222A NPN Silicon Planar Epitaxial Transistor COLLECTOR 2, 4 SOT-223 4 1. BASE BASE 2.COLLECTOR 1 1 3.EMITTER 2 4.COLLECTOR 3 3 EM ITTER ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Symbol Value Unit Collector-Emitter Voltage V CEO 40 Vdc Collector-Base Voltage VCBO Vdc 75 Emitter-Base Voltage VEBO Vdc 6.0 Collector Current (DC) IC(DC) Adc 0.6 1.5 Total Device D

Spec. No. C825L3 Issued Date 2006.04.25 CYStech Electronics Corp. Revised Date Page No. 1/4 NPN Epitaxial Planar Transistor PZT2222AL3 Features High current, max. 600mA Low voltage, max. 40V Pb-free package Applications Switching and linear amplification Symbol Outline PZT2222AL3 SOT-223 C E C B Base B C Collector E Emitter

SMD Type Transistors NPN Transistors PZT2222A (KZT2222A) Unit mm SOT-223 6.50 0.2 3.00 0.1 Features 4 Epitaxial planar die construction Complementary to PZT2907A 1 2 3 0.250 2.30 (typ) Gauge Plane 1.Base 2.Collector 0.70 0.1 3.Emitter 4.60 (typ) 4.Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VC

PZT2222 / PZT2222A PZT2222 / PZT2222A Suface Mount Si-Epitaxial Planar Switching Transistors NPN NPN Si-Epitaxie-Planar-Schalttransistoren f r die Oberfl chenmontage Version 2006-05-09 Power dissipation 1.3 W 6.5 0.2 Verlustleistung 3 0.1 1.65 Plastic case SOT-223 4 Kunststoffgeh use Type Weight approx. 0.04 g Code Gewicht ca. 1 2 3 0.7 Plastic material has UL classifica