SPT5006M Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SPT5006M
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 100 W
Tensión colector-base (Vcb): 100 V
Tensión colector-emisor (Vce): 80 V
Tensión emisor-base (Veb): 6 V
Corriente del colector DC máxima (Ic): 10 A
Temperatura operativa máxima (Tj): 200 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 30 MHz
Capacitancia de salida (Cc): 275 pF
Ganancia de corriente contínua (hFE): 20
Encapsulados: TO254
Búsqueda de reemplazo de SPT5006M
- Selecciónⓘ de transistores por parámetros
SPT5006M datasheet
spt5006 spt5008.pdf
SPT5006 and SPT5008 Series Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone (562) 404-4474 * Fax (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com 10 AMPS DESIGNER S DATA SHEET 100 Volts Part Number / Ordering Information 1/ High Power - High Speed SPT5006 __ __ __ NPN Transistors SPT5008 __ __ __ Screening 2/ __ = Not
spt50n65f1a1t8tl.pdf
SPT50N65F1A1T8TL 650V /50A Trench Field Stop IGBT 650V Trench Field Stop IGBTs offer V 650 V CE low switching losses, high energy efficiency I 50 A C and high avalanche ruggedness for motion control, solar application and welding machine. V I =50A 1.65 V CE(SAT) C FEATURES High breakdown voltage up to 650V for improved reliability Trench-Stop Technology offering
spt50n65f1at8tl.pdf
SPT50N65F1AT8TL 650V /50A Trench Field Stop IGBT 650V Trench Field Stop IGBTs offer V 650 V CE low switching losses, high energy efficiency I 50 A C and high avalanche ruggedness for motion control, solar application and welding machine. V I =50A 1.8 V CE(SAT) C FEATURES High breakdown voltage up to 650V for improved reliability Trench-Stop Technology offering
spt50n65f1a1.pdf
SPT50N65F1A1 650V /50A Trench Field Stop IGBT 650V Trench Field Stop IGBTs offer V 650 V CE low switching losses, high energy efficiency I 50 A C and high avalanche ruggedness for motion control, solar application and welding machine. V I =50A 1.65 V CE(SAT) C FEATURES High breakdown voltage up to 650V for improved reliability Trench-Stop Technology offering
Otros transistores... SMA4032 , SMA4033 , SMA4036 , SMA6010 , SMA6080 , SMA6511 , SPT5006-3 , SPT5006-61 , S9013 , SPT5006S1 , SPT5008-3 , SPT5008-61 , SPT5008M , SPT5008S1 , SPT5330 , MBT35200MT1 , SMBT35200MT1G .
History: BC559CP
History: BC559CP
🌐 : EN ES РУ
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550
Popular searches
hy3210 | d313 transistor equivalent | 2sb827 | c5200 datasheet | 2n2614 | 2sa777 replacement | 2sc828 transistor | 2sd357