SPT5008-61 Todos los transistores

 

SPT5008-61 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SPT5008-61

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 100 W

Tensión colector-base (Vcb): 100 V

Tensión colector-emisor (Vce): 80 V

Tensión emisor-base (Veb): 6 V

Corriente del colector DC máxima (Ic): 10 A

Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 40 MHz

Capacitancia de salida (Cc): 275 pF

Ganancia de corriente contínua (hFE): 45

Encapsulados: TO61

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SPT5008-61 datasheet

 7.1. Size:76K  ssdi
 spt5006 spt5008.pdf pdf_icon

SPT5008-61

SPT5006 and SPT5008 Series Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone (562) 404-4474 * Fax (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com 10 AMPS DESIGNER S DATA SHEET 100 Volts Part Number / Ordering Information 1/ High Power - High Speed SPT5006 __ __ __ NPN Transistors SPT5008 __ __ __ Screening 2/ __ = Not

 9.1. Size:5480K  cn sps
 spt50n65f1a1t8tl.pdf pdf_icon

SPT5008-61

SPT50N65F1A1T8TL 650V /50A Trench Field Stop IGBT 650V Trench Field Stop IGBTs offer V 650 V CE low switching losses, high energy efficiency I 50 A C and high avalanche ruggedness for motion control, solar application and welding machine. V I =50A 1.65 V CE(SAT) C FEATURES High breakdown voltage up to 650V for improved reliability Trench-Stop Technology offering

 9.2. Size:5494K  cn sps
 spt50n65f1at8tl.pdf pdf_icon

SPT5008-61

SPT50N65F1AT8TL 650V /50A Trench Field Stop IGBT 650V Trench Field Stop IGBTs offer V 650 V CE low switching losses, high energy efficiency I 50 A C and high avalanche ruggedness for motion control, solar application and welding machine. V I =50A 1.8 V CE(SAT) C FEATURES High breakdown voltage up to 650V for improved reliability Trench-Stop Technology offering

 9.3. Size:1793K  cn sptech
 spt50n65f1a1.pdf pdf_icon

SPT5008-61

SPT50N65F1A1 650V /50A Trench Field Stop IGBT 650V Trench Field Stop IGBTs offer V 650 V CE low switching losses, high energy efficiency I 50 A C and high avalanche ruggedness for motion control, solar application and welding machine. V I =50A 1.65 V CE(SAT) C FEATURES High breakdown voltage up to 650V for improved reliability Trench-Stop Technology offering

MOSTRAR MÁS

Otros transistores... SMA6010 , SMA6080 , SMA6511 , SPT5006-3 , SPT5006-61 , SPT5006M , SPT5006S1 , SPT5008-3 , 13005 , SPT5008M , SPT5008S1 , SPT5330 , MBT35200MT1 , SMBT35200MT1G , MBT3904DW1T1G , MBT3904DW2T1G , SMBT3904DW1T1G .

 

 

 

 

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