2SD1898-R Todos los transistores

 7.1. Size:114K  rohm
 2sd1898 2sd1733 2sd1768s 2sd1863.pdf

Power Transistor (80V, 1A) 2SD1898 / 2SD1733 / 2SD1768S / 2SD1863 Features Dimensions (Unit mm) 1) High VCEO, VCEO=80V 2SD1898 2) High IC, IC=1A (DC) 4.5+0.2 -0.1 1.5 0.1 3) Good hFE linearity 1.6 0.1 4) Low VCE (sat) 5) Complements the 2SB1260 / (1) (2) (3) 2SB1241 / 2SB1181 0.4+0.1 -0.05 0.4 0.1 0.5 0.1 0.4 0.1 1.5 0.1 1.5 0.1 3.0 0.2 (1) Base RO

 7.2. Size:458K  rohm
 2sd1898 2sd1733.pdf

2SD1898 / 2SD1733 Datasheet NPN 1.0A 80V Middle Power Transistor lOutline Collector MPT3 CPT3 Parameter Value VCEO 80V Base Collector IC 1.0A Emitter Base Emitter 2SD1898 2SD1733 lFeatures (SC-62) (SC-63) 1) Suitable for Middle Power Driver 2) Complementary PNP Types 2SB1260 / 2SB1181 3) Low VCE(sat) VCE(sat)= 0.4V Max. (IC/IB=500mA/20mA) 4

 7.3. Size:1547K  rohm
 2sd1898.pdf

2SD1898 Datasheet Middle Power Transistor (80V / 1A) lOutline l SOT-89 Parameter Value SC-62 VCEO 80V IC 1A MPT3 lFeatures lInner circuit l l 1)Low saturation voltage, tipically VCE(sat)=150mV at IC/IB=500mA/50mA. 2)Complementary PNP Types 2SB1260 lApplication l LOW FREQUENCY OUTPUT AMPLIFIER lPackaging specifications l Ba

 7.4. Size:910K  mcc
 2sd1898.pdf

2SD1898 Electrical Characteristics @ TA=25 C Unless Otherwise Specified Parameter Symbol Min Typ Max Units Conditions V(BR)CBO IC=50 A, IE=0 Collector-Base Breakdown Voltage 100 V V(BR)CEO IC=1mA, IB=0 Collector-Emitter Breakdown Voltage 80 V V(BR)EBO IE=50 A, IC=0 Emitter-Base Breakdown Voltage 5 V ICBO VCB=80V, IE=0 Collector Cutoff Current 1 A IEBO VEB=4V, IC=0 Emitter Cu

 7.5. Size:129K  utc
 2sd1898.pdf

UNISONIC TECHNOLOGIES CO., LTD 2SD1898 NPN SILICON TRANSISTOR POWER TRANSISTOR FEATURES *High VCEO= 80V *High IC= 1A (DC) *Good hFE linearity. *Low VCE(SAT) *Complements the 2SB1260. ORDERING INFORMATION Pin Assignment Ordering Number Package Packing 1 2 3 2SD1898G-x-AA3-R SOT-223 B C E Tape Reel 2SD1898G-x-AB3-R SOT-89 B C E Tape Reel 2SD1898G-x-AE3-R SOT-23

 7.6. Size:416K  secos
 2sd1898.pdf

2SD1898 NPN Silicon Elektronische Bauelemente Epitaxial Planar Transistor RoHS Compliant Product Description SOT-89 The 2SD1898 is designed for switching applications. Millimeter Millimeter REF. REF. Min. Max. Min. Max. A 4.4 4.6 G 3.00 REF. B 4.05 4.25 H 1.50 REF. C 1.50 1.70 I 0.40 0.52 D 1.30 1.50 J 1.40 1.60 E 2.40 2.60 K 0.35 0.41 F 0.89 1.20 L 5 TYP. M 0.70 RE

 7.7. Size:606K  jiangsu
 2sd1898.pdf

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SD1898 TRANSISTOR (NPN) 1. BASE FEATURES 2. COLLECTOR High Breakdown Voltage and Current Excellent DC Current Gain Linearity 3. EMITTER Complement the 2SB1260 Low Collector-Emitter Saturation Voltage MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol P

 7.8. Size:311K  htsemi
 2sd1898.pdf

2SD1898 TRANSISTOR (NPN) SOT-89-3L FEATURES High Breakdown Voltage and Current 1. BASE Excellent DC Current Gain Linearity 2. COLLECTOR Complement the 2SB1260 Low Collector-Emitter Saturation Voltage 3. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 80 V VE

 7.9. Size:170K  wietron
 2sd1898.pdf

2SD1898 Epitaxial Planar NPN Transistors SOT-89 1 2 1. BASE 3 2. COLLECTOR 3. EMITTER C (Ta=25 ) ABSOLUTE MAXIMUM RATINGS Rating Symbol Limits Unit Vdc Collector-Base Voltage V 100 CBO Vdc Collector-Emitter Voltage 80 VCEO Vdc Emitter-Base Voltage 5 VEBO IC A(DC) 1 Collector Current ICP 2 A (Pulse)* PC 0.5 W Collector Power Dissipation T , Tstg C Junction Tempera

 7.10. Size:262K  willas
 2sd1898.pdf

WILLAS 2SD1898 SOT-89 Plastic-Encapsulate Transistors TRANSISTOR (NPN) SOT-89 FEATURES High Breakdown Voltage and Current 1. BASE Excellent DC Current Gain Linearity 2. COLLECTOR 3. EMITTER Low Collector-Emitter Saturation Voltage MAXIMUM RATINGS (Ta=25 unless otherwise noted) Pb-Free package is available Symbol Parameter Value Unit RoHS product for pack

 7.11. Size:603K  kexin
 2sd1898.pdf

SMD Type Transistors NPN Transistors 2SD1898 1.70 0.1 Features High VCEO, VCEO=80V High IC, IC=1A (DC) Low VCE (sat) 0.42 0.1 0.46 0.1 Complementary to 2SB1260 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 120 Collector - Emitter Voltage VCEO 80 V Emitter - Base Voltage

 7.12. Size:723K  slkor
 2sd1898q 2sd1898r.pdf

2SD1898 1.70 0.1 Features High VCEO, VCEO=80V High IC, IC=1A (DC) Low VCE (sat) 0.42 0.1 0.46 0.1 Complementary to 2SB1260 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 120 Collector - Emitter Voltage VCEO 80 V Emitter - Base Voltage VEBO 5 Collector Current - Continuous IC 1

 7.13. Size:272K  cn shikues
 2sd1898q 2sd1898r.pdf

2SD1898 NPN-General use transistor 1W 1.0A 32V 4 Applications Can be used for switching and amplifying in Can be used for switching and amplifying in 1 2 3 various electrical and electronic equipments electrical and electronic equipments SOT-89 SOT 1 Base 2 Collector 3 Collector 3 Emitter Absolute Maximum Ratings (Ta = 25 ) parameters symbol rating unit