2SD1899-L Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SD1899-L  📄📄 

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 1 W

Tensión colector-base (Vcb): 60 V

Tensión colector-emisor (Vce): 60 V

Tensión emisor-base (Veb): 7 V

Corriente del colector DC máxima (Ic): 3 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 120 MHz

Capacitancia de salida (Cc): 30 pF

Ganancia de corriente contínua (hFE): 160

Encapsulados: TO252

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2SD1899-L datasheet

 6.1. Size:991K  jiangsu
 2sd1899-z.pdf pdf_icon

2SD1899-L

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251-3L Plastic-Encapsulate Transistors 2SD1899-Z TRANSISTOR (NPN) TO-251-3L FEATURES High hFE Low VCE(sat) 1.BASE MAXIMUM RATINGS (Ta=25 unless otherwise noted) 2.COLLECTOR Symbol Parameter Value Unit 3.EMITTER VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 7

 6.2. Size:56K  transys
 2sd1899-z.pdf pdf_icon

2SD1899-L

Transys Electronics L I M I T E D TO-252 Plastic-Encapsulated Transistors 2SD1899-Z TRANSISTOR (NPN) TO-252 FEATURES Power dissipation 1. BASE PCM 2 W (Tamb=25 ) 2. COLLECTOR Collector current 3. EMITTER ICM 3 A 1 2 3 Collector-base voltage V(BR)CBO 60 V Operating and storage junction temperature range TJ, Tstg -55 to +150 ELECTRICAL CHARA

 6.3. Size:600K  lge
 2sd1899-z.pdf pdf_icon

2SD1899-L

2SD1899-Z(NPN) TO-251/TO-252-2L Transistor TO-251 1.BASE 2.COLLECTOR 3.EMITTER 1 2 3 Features High hFE hFE=100 to 400 Low VCE(sat) VCE(sat)=0.25V MAXIMUM RATINGS (TA=25 unless otherwise noted) TO-252-2L Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 7 V IC Collector Current -Continuou

 6.4. Size:207K  inchange semiconductor
 2sd1899-k.pdf pdf_icon

2SD1899-L

isc Silicon NPN Power Transistors 2SD1899-K DESCRIPTION Low Collector Saturation Voltage High Power Dissipation- P = 10W(Max)@T =25 C C Complement to Type 2SB1261-K Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in audio amplifier and switching, especially in hybrid integrated circuits. ABSOLUTE MAXIMUM

MOSTRAR MÁS

Otros transistores... SMLA42CSM, SMLA42DCSM, SMLBFY90, 2SD1857A, 2SD1898-P, 2SD1898-Q, 2SD1898-R, 2SD1899-K, BD136, 2SD1899-M, 2SD1899-Z, 2SD1005-U, 2SD1005-V, 2SD1005-W, 2SD1164-Z, 2SD1484KFRA, 2SD1949FRA