2SD1781KGP Datasheet. Equivalente

 ..1. Size:221K  chenmko
 2sd1781kgp.pdf

CHENMKO ENTERPRISE CO.,LTD 2SD1781KGP SURFACE MOUNT NPN Switching Transistor VOLTAGE 32 Volts CURRENT 0.8 Ampere APPLICATION * Telephone and proferssional communction equipment. * Other switching applications. FEATURE SOT-23 * Small surface mounting type. (SOT-23) * Corrector peak current (Max.=1500mA). * Suitable for high packing density. * Low voltage (Max.=32V) . * High satur

 6.1. Size:1661K  rohm
 2sd1781k.pdf

2SD1781K Datasheet Medium Power Transistor (32V, 800mA) lOutline l Parameter Value SMT3 VCEO 32V IC 800mA SOT-346 SC-59 lFeatures l 1)Very low VCE(sat). lInner circuit l VCE(sat)=0.1V(Typ.) (IC/IB=500mA/50mA) 2)Higt current capacity in compact package. 3)Complements the 2SB1197K. lApplication l

 6.2. Size:969K  rohm
 2sd1781kfra.pdf

2SD1781KFRA 2SD1781K Transistors AEC-Q101 Qualified Medium Power Transistor (32V, 0.8A) 2SD1781K 2SD1781KFRA External dimensions (Unit mm) Features 1) Very Low VCE(sat). 2.9 0.2 VCE(sat) = 0.1V(Typ.) 1.1+0.2 1.9 0.2 -0.1 IC / IB= 500 A / 50mA 0.8 0.1 0.95 0.95 2) High current capacity in compact package. (1) (2) 0 0.1 3) Complements the 2SB1197K 2SB1197K. (3) +0

 6.3. Size:214K  lge
 2sd1781k sot-23-3l.pdf

2SD1781K SOT-23-3L Transistor(NPN) SOT-23-3L 1. BASE 2. EMITTER 2.92 0.35 3. COLLECTOR 1.17 Features 2.80 1.60 Low voltage High saturation current capability 0.15 1.90 MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millimeters) Symbol Parameter Value Units VCBO 40 V Collector-Base Voltage VCEO Collector-Emitter Voltage 32 V VEBO Emit

 6.4. Size:118K  lrc
 l2sd1781kqlt1g.pdf

LESHAN RADIO COMPANY, LTD. Medium Power Transistor L2SD1781KQLT1G Series S-L2SD1781KQLT1G Series (32V, 0.8A) L2SD1781KQLT1G FFeatures 3 1) Very low VCE(sat). VCE(sat) t 0.4 V (Typ.) (IC / IB = 500mA / 50mA) 1 2) High current capacity in compact 2 package. 3) Complements the L2SB1197KXLT1G SOT-23 /TO-236AB 4) We declare that the material of product compliance with RoHS requireme

 6.5. Size:117K  lrc
 l2sd1781krlt1g.pdf

LESHAN RADIO COMPANY, LTD. Medium Power Transistor L2SD1781KQLT1G Series (32V, 0.8A) S-L2SD1781KQLT1G Series L2SD1781KQLT1G FFeatures 3 1) Very low VCE(sat). VCE(sat) t 0.4 V (Typ.) 1 (IC / IB = 500mA / 50mA) 2) High current capacity in compact 2 package. SOT-23 /TO-236AB 3) Complements the L2SB1197KXLT1G 4) We declare that the material of product compliance with RoHS requirem

 6.6. Size:542K  cn shikues
 2sd1781k-q 2sd1781k-r.pdf

2SD1781K Silicon Epitaxial Planar Transistor FEATURES High Collector Current.(IC= 500mA Complementary To 2SB1197K Excellent HFE Linearity. High total power dissipation.(PC=300mW) APPLICATIONS High Collector Current. MAXIMUM RATING @ Ta=25 unless otherwise specified CLASSIFICATION OF hFE(1) REV.08 1 of 4 2SD1781K ELECTRICAL CHARACTERISTICS @ Ta=25 unle