BUL741FP Datasheet. Equivalente

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 bul741 bul741fp.pdf

BUL741 BUL741FP High voltage fast-switching NPN power transistors Features High voltage capability Low spread of dynamic parameters Minimum lot-to-lot spread for reliable operation Very high switching speed 3 3 2 2 1 1 Applications TO-220 TO-220FP Electronic ballast for fluorescent lighting Switch mode power supplies. Description Figure 1. Internal sch

 8.1. Size:330K  st
 bul741-fp.pdf

BUL741 BUL741FP High voltage fast-switching NPN power transistors Features High voltage capability Low spread of dynamic parameters Minimum lot-to-lot spread for reliable operation Very high switching speed 3 3 2 2 1 1 Applications TO-220 TO-220FP Electronic ballast for fluorescent lighting Switch mode power supplies. Description Figure 1. Internal sch

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 bul743.pdf

BUL743 High voltage fast-switching NPN power transistor Features Low spread of dynamic parameters High voltage capability Minimum lot-to-lot spread for reliable operation Very high switching speed 3 2 1 Applications Electronic ballast for fluorescent lighting up to TO-220 256 W (8 x 32 W) Switch mode power supplies Figure 1. Internal schematic diagram Des

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 bul742c.pdf

BUL742C HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR Ordering Code Marking Package / Shipment BUL742C BUL742C TO-220 / Tube HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED 3 2 APPLICATIONS 1 ELECTRONIC BALLAST FOR FLUORESCENT TO-220 LIGHTING SWITCH MODE POWER SUPPLIES DESCRIPTION Th

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 bul742c bulb742c.pdf

BUL742C BULB742C High voltage fast-switching NPN power transistor Features Low spread of dynamic parameters High voltage capability Minimum lot-to-lot spread for reliable operation Very high switching speed 3 3 2 2 1 1 Applications TO-220 I2PAK Electronic ballast for fluorescent lighting Switch mode power supplies Description The device is manufacture

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 bul742.pdf

BUL742 NPN /SILICON NPN TRANSISTOR Purpose High frequency electronic lighting, switching power supply applications. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 900 V CBO V 400 V CEO V 12 V EBO I 4 A C I 2 A B P (Ta=25 ) 2 W C P (

 9.5. Size:59K  inchange semiconductor
 bul742.pdf

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BUL742 DESCRIPTION With TO-220C package High voltage capability Very high switching speed APPLICATIONS Electronic ballast for fluorescent lighting Switch mode power supplies PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratin

 9.6. Size:281K  inchange semiconductor
 bul742c.pdf

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUL742C DESCRIPTION Collector Emitter Breakdown Voltage V(BR)CEO = 400V(Min.) Collector Saturation Voltage VCE(sat) = 0.2V(Max) @ IC= 0.8A APPLICATIONS Designed for electronic lamp ballast circuits switch-mode power supplies applications. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL P