BUL742 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BUL742
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 2 W
Tensión colector-base (Vcb): 900 V
Tensión colector-emisor (Vce): 400 V
Tensión emisor-base (Veb): 12 V
Corriente del colector DC máxima (Ic): 4 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 35
Paquete / Cubierta: TO220
Búsqueda de reemplazo de transistor bipolar BUL742
BUL742 Datasheet (PDF)
bul742.pdf
BUL742 NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting, switching power supply applications. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 900 V CBO V 400 V CEO V 12 V EBO I 4 A C I 2 ABP (Ta=25) 2 WCP (
bul742.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors BUL742 DESCRIPTION With TO-220C package High voltage capability Very high switching speed APPLICATIONS Electronic ballast for fluorescent lighting Switch mode power supplies PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterAbsolute maximum ratin
bul742c.pdf
BUL742CHIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTOROrdering Code Marking Package / ShipmentBUL742C BUL742C TO-220 / Tube HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FORRELIABLE OPERATION VERY HIGH SWITCHING SPEED32APPLICATIONS:1 ELECTRONIC BALLAST FOR FLUORESCENTTO-220LIGHTING SWITCH MODE POWER SUPPLIESDESCRIPTIONTh
bul742c bulb742c.pdf
BUL742CBULB742CHigh voltage fast-switchingNPN power transistorFeatures Low spread of dynamic parameters High voltage capability Minimum lot-to-lot spread for reliable operation Very high switching speed332 211ApplicationsTO-220I2PAK Electronic ballast for fluorescent lighting Switch mode power suppliesDescriptionThe device is manufacture
bul742c.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUL742C DESCRIPTIONCollectorEmitter Breakdown Voltage : V(BR)CEO = 400V(Min.) Collector Saturation Voltage : VCE(sat) = 0.2V(Max) @ IC= 0.8A APPLICATIONSDesigned for electronic lamp ballast circuits switch-mode power supplies applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL P
Otros transistores... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
History: 2N6709 | 2SC2361
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050