BUL128DR7 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BUL128DR7
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 75 W
Tensión colector-base (Vcb): 700 V
Tensión colector-emisor (Vce): 400 V
Tensión emisor-base (Veb): 9 V
Corriente del colector DC máxima (Ic): 4 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 7 MHz
Ganancia de corriente contínua (hfe): 10
Paquete / Cubierta: TO220
Búsqueda de reemplazo de transistor bipolar BUL128DR7
BUL128DR7 Datasheet (PDF)
bul128dr7.pdf
BUL128DR7 NPN /SILICON NPN TRANSISTOR : Purpose: Electronic ballasts for fluorescent lighting,flyback and forward single transistor low power converters. :N Features: NPN transistor,high voltage capability,low
bul128dr8.pdf
BUL128DR8 NPN /SILICON NPN TRANSISTOR : Purpose: Electronic ballasts for fluorescent lighting,flyback and forward single transistor low power converters. :N Features: NPN transistor,high voltage capability,low
bul128d-b.pdf
BUL128D-BHIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTORn STMicroelectronics PREFERRED SALES Figure 1: PackageTYPEn NPN TRANSISTORn HIGH VOLTAGE CAPABILITYn LOW SPREAD OF DYNAMIC PARAMETERSn MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATIONn VERY HIGH SWITCHING SPEEDn INTEGRATED ANTIPARALLEL 3COLLECTOR- EMITTER DIODE21 TO-220APPLICATIONSn ELECTRONIC BALLAST FO
bul128d.pdf
BUL128D-B HIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTOR STMicroelectronics PREFERREDSALESTYPE NPN TRANSISTOR HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FORRELIABLE OPERATION VERY HIGH SWITCHING SPEED3 INTEGRATED ANTIPARALLEL2COLLECTOR-EMITTER DIODE1APPLICATIONS:TO-220 ELECTRONIC BALLASTS FORFLUORESCENT LIGHTING
bul128d.pdf
BUL128D(NPN) TO-220 TransistorTO-2201.BASE 2.COLLECTOR 3.EMITTER 3 21Features ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING FLYBACK AND FORWARD SINGLE TRANSISTOR LOW POWER CONVERTERS MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 700 V Dimensions in inches and (millimeters)VCEO Collector-Emitter Vol
bul128d.pdf
SUNROC BUL128D TRANSISTOR (NPN) TO-220 FEATURES ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING FLYBACK AND FORWARD SINGLE TRANSISTOR LOW POWER 1.BASE CONVERTERS 2.COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) 3.EMITTER Symbol Parameter Value Units 1 2 3 VCBO Collector-Base Voltage 700 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage
bul128d.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors BUL128D DESCRIPTION With TO-220C package High voltage ,high speed Integrated antiparallel collector-emitter diode APPLICATIONS Designed for use in lighting applications and low cost switch-mode power supplies. PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050