BUL128DR7 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BUL128DR7
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 75 W
Tensión colector-base (Vcb): 700 V
Tensión colector-emisor (Vce): 400 V
Tensión emisor-base (Veb): 9 V
Corriente del colector DC máxima (Ic): 4 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 7 MHz
Ganancia de corriente contínua (hfe): 10
Paquete / Cubierta: TO220
Búsqueda de reemplazo de BUL128DR7
BUL128DR7 Datasheet (PDF)
bul128dr7.pdf

BUL128DR7 NPN /SILICON NPN TRANSISTOR : Purpose: Electronic ballasts for fluorescent lighting,flyback and forward single transistor low power converters. :N Features: NPN transistor,high voltage capability,low
bul128dr8.pdf

BUL128DR8 NPN /SILICON NPN TRANSISTOR : Purpose: Electronic ballasts for fluorescent lighting,flyback and forward single transistor low power converters. :N Features: NPN transistor,high voltage capability,low
bul128d-b.pdf

BUL128D-BHIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTORn STMicroelectronics PREFERRED SALES Figure 1: PackageTYPEn NPN TRANSISTORn HIGH VOLTAGE CAPABILITYn LOW SPREAD OF DYNAMIC PARAMETERSn MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATIONn VERY HIGH SWITCHING SPEEDn INTEGRATED ANTIPARALLEL 3COLLECTOR- EMITTER DIODE21 TO-220APPLICATIONSn ELECTRONIC BALLAST FO
bul128d.pdf

BUL128D-B HIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTOR STMicroelectronics PREFERREDSALESTYPE NPN TRANSISTOR HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FORRELIABLE OPERATION VERY HIGH SWITCHING SPEED3 INTEGRATED ANTIPARALLEL2COLLECTOR-EMITTER DIODE1APPLICATIONS:TO-220 ELECTRONIC BALLASTS FORFLUORESCENT LIGHTING
Otros transistores... BUL741FP , BUL742 , BUL743 , BUL98 , BUL1102EFP , BUL123S , BUL128D , BUL128D-B , 100DA025D , BUL128DR8 , BUL129D , BUL3P5 , BUL416T , BUL45D2G , BUL49DFP , BUL64A , BUL64B .



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