BUL64A Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BUL64A  📄📄 

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 20 W

Tensión colector-base (Vcb): 1000 V

Tensión colector-emisor (Vce): 500 V

Tensión emisor-base (Veb): 10 V

Corriente del colector DC máxima (Ic): 4 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 20 MHz

Capacitancia de salida (Cc): 20 pF

Ganancia de corriente contínua (hFE): 12

Encapsulados: TO251

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BUL64A datasheet

 ..1. Size:14K  semelab
 bul64a.pdf pdf_icon

BUL64A

BUL64A SEME LAB ADVANCED MECHANICAL DATA DISTRIBUTED BASE DESIGN Dimensions in mm (inches) HIGH VOLTAGE 2.18 (0.086) 2.44 (0.096) 6.40 (0.252) HIGH SPEED NPN 6.78 (0.267) 5.21 (0.205) 0.84 (0.033) SILICON POWER TRANSISTOR 5.46 (0.215) 0.94 (0.037) 1.09 (0.043) 1.30 (0.051) Designed for use in electronic ballast applications 5.97 (0.235) 6.22 (0.245) 1 2 3 SEMEFAB DESI

 9.1. Size:95K  onsemi
 bul642d2.pdf pdf_icon

BUL64A

BUL642D2 High Speed, High Gain Bipolar NPN Transistor with Integrated Collector-Emitter and http //onsemi.com Built-in Efficient Antisaturation Network 3 AMPERES 825 VOLTS The BUL642D2 is a state-of-the-art High Speed High Gain Bipolar Transistor (H2BIP). Tight dynamic characteristics and lot to 75 WATTS lot minimum spread (150 ns on storage time) make it ideally suitable POWER TR

 9.2. Size:14K  semelab
 bul64b.pdf pdf_icon

BUL64A

BUL64B SEME LAB ADVANCED MECHANICAL DATA DISTRIBUTED BASE DESIGN Dimensions in mm (inches) HIGH VOLTAGE 2.18 (0.086) 2.44 (0.096) 6.40 (0.252) HIGH SPEED NPN 6.78 (0.267) 5.21 (0.205) 0.84 (0.033) SILICON POWER TRANSISTOR 5.46 (0.215) 0.94 (0.037) 1.09 (0.043) 1.30 (0.051) Designed for use in electronic ballast applications 5.97 (0.235) 6.22 (0.245) 1 2 3 SEMEFAB DESI

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