BUL65A Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BUL65A  📄📄 

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 20 W

Tensión colector-base (Vcb): 600 V

Tensión colector-emisor (Vce): 300 V

Tensión emisor-base (Veb): 10 V

Corriente del colector DC máxima (Ic): 7 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 20 MHz

Capacitancia de salida (Cc): 30 pF

Ganancia de corriente contínua (hFE): 25

Encapsulados: TO251

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BUL65A datasheet

 ..1. Size:14K  semelab
 bul65a.pdf pdf_icon

BUL65A

BUL65A SEME LAB ADVANCED MECHANICAL DATA DISTRIBUTED BASE DESIGN Dimensions in mm HIGH VOLTAGE 2.18 (0.086) 2.44 (0.096) 6.40 (0.252) HIGH SPEED NPN 6.78 (0.267) 5.21 (0.205) 0.84 (0.033) 5.46 (0.215) 0.94 (0.037) SILICON POWER TRANSISTOR 1.09 (0.043) 1.30 (0.051) Designed for use in 5.97 (0.235) 6.22 (0.245) electronic ballast applications 1 2 3 SEMEFAB DESIGNED AND

 9.1. Size:54K  st
 bul654.pdf pdf_icon

BUL65A

BUL654 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR PRELIMINARY DATA HIGH VOLTAGE CAPABILITY MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION LOW BASE-DRIVE REQUIREMENTS VERY HIGH SWITCHING SPEED FULLY CHARACTERIZED AT 125oC APPLICATIONS ELECTRONIC TRANSFORMER FOR 3 2 HALOGEN LAMPS 1 SWITCH MODE POWER SUPPLIES TO-220 DESCRIPTION The BUL654 is manufactured us

 9.2. Size:14K  semelab
 bul65b.pdf pdf_icon

BUL65A

BUL65B SEME LAB ADVANCED MECHANICAL DATA DISTRIBUTED BASE DESIGN Dimensions in mm HIGH VOLTAGE 2.18 (0.086) 2.44 (0.096) 6.40 (0.252) HIGH SPEED NPN 6.78 (0.267) 5.21 (0.205) 0.84 (0.033) 5.46 (0.215) 0.94 (0.037) SILICON POWER TRANSISTOR 1.09 (0.043) 1.30 (0.051) Designed for use in 5.97 (0.235) 6.22 (0.245) electronic ballast applications 1 2 3 SEMEFAB DESIGNED AND

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