BUL54BSMD . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BUL54BSMD
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 70 W
Tensión colector-emisor (Vce): 400 V
Corriente del colector DC máxima (Ic): 5 A
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 20 MHz
Ganancia de corriente contínua (hfe): 15
Paquete / Cubierta: TO276AB
Búsqueda de reemplazo de transistor bipolar BUL54BSMD
BUL54BSMD Datasheet (PDF)
bul54bsmd.pdf
BUL54BSMDDimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 0.89(0.035)min.Ceramic Surface Mount 3.70 (0.146) 3.70 (0.146) 3.60 (0.142)3.41 (0.134) 3.41 (0.134) Max.Package for High Reliability Applications 1 3Bipolar NPN Device. 2VCEO = 400V IC = 5A 9.67 (0.381)All Semelab hermetically sealed products 9.38 (0.369)0.50 (0.020)0.26 (
bul54asmd.pdf
BUL54ASMDADVANCEDMECHANICAL DATADISTRIBUTED BASE DESIGNDimensions in mmHIGH VOLTAGEHIGH SPEED NPN SILICON POWER TRANSISTOR SEMEFAB DESIGNED AND DIFFUSED DIEHIGH VOLTAGE FAST SWITCHING (tf = 40ns)EXCEPTIONAL HIGH TEMPERATURE PERFORMANCE HIGH ENERGY RATINGE
bul54a-sm.pdf
BUL54ASMSEMELABADVANCEDMECHANICAL DATADISTRIBUTED BASE DESIGNDimensions in mmHIGH VOLTAGEHIGH SPEED NPNSILICON POWER TRANSISTORSEMEFAB DESIGNED AND DIFFUSED DIE11.52.00.25 HIGH VOLTAGE3.5 3.5 3.0FAST SWITCHING (tf = 40ns)EXCEPTIONAL HIGH TEMPERATURE PERFORMANCE1 3HIGH ENERGY RATINGEFFICIENT POWER SWITCHING2MILITARY AND HIREL
bul54a-to5.pdf
SILICON POWER NPN TRANSISTOR BUL54A-TO5 Advanced Distributed Base design High Voltage Fast Switching High Energy Rating Screening Options Available Features: Features:Features:Features: Multibase for efficient energy distribution across the chip resulting in significantly improved switching and energy ratings across full temperature range.
bul54a-t257f.pdf
BUL54A-T257FSEMELABADVANCEDMECHANICAL DATADISTRIBUTED BASE DESIGNDimensions in mmHIGH VOLTAGE4.50HIGH SPEED NPN4.8110.400.7510.800.95SILICON POWER TRANSISTOR3.50Dia.3.70Designed for use in electronic ballast applications1 2 31.0 dia.3 places SEMEFAB DESIGNED AND DIFFUSED DIE HIGH VOLTAGE FAST SWITCHING0.750.852.54 2.65
Otros transistores... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D882P , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
