BUL54BSMD
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BUL54BSMD
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 70
W
Tensión colector-emisor (Vce): 400
V
Corriente del colector DC máxima (Ic): 5
A
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 20
MHz
Ganancia de corriente contínua (hfe): 15
Paquete / Cubierta:
TO276AB
Búsqueda de reemplazo de transistor bipolar BUL54BSMD
BUL54BSMD
Datasheet (PDF)
..1. Size:10K semelab
bul54bsmd.pdf
BUL54BSMDDimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 0.89(0.035)min.Ceramic Surface Mount 3.70 (0.146) 3.70 (0.146) 3.60 (0.142)3.41 (0.134) 3.41 (0.134) Max.Package for High Reliability Applications 1 3Bipolar NPN Device. 2VCEO = 400V IC = 5A 9.67 (0.381)All Semelab hermetically sealed products 9.38 (0.369)0.50 (0.020)0.26 (
9.1. Size:20K semelab
bul54asmd.pdf
BUL54ASMDADVANCEDMECHANICAL DATADISTRIBUTED BASE DESIGNDimensions in mmHIGH VOLTAGEHIGH SPEED NPN SILICON POWER TRANSISTOR SEMEFAB DESIGNED AND DIFFUSED DIEHIGH VOLTAGE FAST SWITCHING (tf = 40ns)EXCEPTIONAL HIGH TEMPERATURE PERFORMANCE HIGH ENERGY RATINGE
9.2. Size:15K semelab
bul54a-sm.pdf
BUL54ASMSEMELABADVANCEDMECHANICAL DATADISTRIBUTED BASE DESIGNDimensions in mmHIGH VOLTAGEHIGH SPEED NPNSILICON POWER TRANSISTORSEMEFAB DESIGNED AND DIFFUSED DIE11.52.00.25 HIGH VOLTAGE3.5 3.5 3.0FAST SWITCHING (tf = 40ns)EXCEPTIONAL HIGH TEMPERATURE PERFORMANCE1 3HIGH ENERGY RATINGEFFICIENT POWER SWITCHING2MILITARY AND HIREL
9.3. Size:137K semelab
bul54a-to5.pdf
SILICON POWER NPN TRANSISTOR BUL54A-TO5 Advanced Distributed Base design High Voltage Fast Switching High Energy Rating Screening Options Available Features: Features:Features:Features: Multibase for efficient energy distribution across the chip resulting in significantly improved switching and energy ratings across full temperature range.
9.4. Size:15K semelab
bul54a-t257f.pdf
BUL54A-T257FSEMELABADVANCEDMECHANICAL DATADISTRIBUTED BASE DESIGNDimensions in mmHIGH VOLTAGE4.50HIGH SPEED NPN4.8110.400.7510.800.95SILICON POWER TRANSISTOR3.50Dia.3.70Designed for use in electronic ballast applications1 2 31.0 dia.3 places SEMEFAB DESIGNED AND DIFFUSED DIE HIGH VOLTAGE FAST SWITCHING0.750.852.54 2.65
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