2N6654 Todos los transistores

 

2N6654 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2N6654

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 150 W

Tensión colector-base (Vcb): 400 V

Tensión colector-emisor (Vce): 350 V

Tensión emisor-base (Veb): 7 V

Corriente del colector DC máxima (Ic): 20 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 25 MHz

Capacitancia de salida (Cc): 300 pF

Ganancia de corriente contínua (hFE): 10

Encapsulados: TO3

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2N6654 datasheet

 ..1. Size:12K  semelab
2n6654.pdf pdf_icon

2N6654

2N6654 Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99) 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) Metal Package. 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 Bipolar NPN Device. 3 VCEO = 350V (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) IC = 20A 12.70 (0.50) All Semelab hermetically sealed products can be processed in

 ..2. Size:147K  jmnic
2n6654.pdf pdf_icon

2N6654

JMnic Product Specification Silicon NPN Power Transistors 2N6654 DESCRIPTION With TO-3 package High voltage capability Fast switching speeds Low saturation voltage APPLICATIONS Switcing regulators Inverters Solenoid and relay drivers Deflection circuits PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol

 ..3. Size:186K  inchange semiconductor
2n6654.pdf pdf_icon

2N6654

isc Silicon NPN Power Transistor 2N6654 DESCRIPTION High Voltage Capability High Current Current Capability Low Collector Saturation Voltage- High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Desinged for use in switching and linear applications in military and power conversion. Absolute maximum ratings(Ta

 9.1. Size:89K  vishay
2n6659-2.pdf pdf_icon

2N6654

2N6659, 2N6659-2 www.vishay.com Vishay Siliconix N-Channel 35 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Military Qualified VDS (V) 35 Low On-Resistence 1.3 RDS(on) ( ) at VGS = 10 V 1.8 Low Threshold 1.7 V Configuration Single Low Input Capacitance 35 pF Fast Switching Speed 8 ns Low Input and Output Leakage TO-205AD BENEFITS (TO-39) Guarant

Otros transistores... 2N665 , 2N6650 , 2N6653 , 2N6653-1 , 2N6653-2 , 2N6653-3 , 2N6653A , 2N6653B , TIP3055 , 2N6654-1 , 2N6654-2 , 2N6654A , 2N6654B , 2N6655 , 2N6655-1 , 2N6655-2 , 2N6655A .

History: 2N6655-2 | 2N6674

 

 

 


History: 2N6655-2 | 2N6674

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