2N6654-1 Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2N6654-1
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 150 W
Tensión colector-base (Vcb): 400 V
Tensión colector-emisor (Vce): 350 V
Tensión emisor-base (Veb): 7 V
Corriente del colector DC máxima (Ic): 20 A
Temperatura operativa máxima (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 25 MHz
Capacitancia de salida (Cc): 300 pF
Ganancia de corriente contínua (hFE): 10
Encapsulados: TO3
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2N6654-1 datasheet
2n6654.pdf
2N6654 Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99) 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) Metal Package. 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 Bipolar NPN Device. 3 VCEO = 350V (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) IC = 20A 12.70 (0.50) All Semelab hermetically sealed products can be processed in
2n6654.pdf
JMnic Product Specification Silicon NPN Power Transistors 2N6654 DESCRIPTION With TO-3 package High voltage capability Fast switching speeds Low saturation voltage APPLICATIONS Switcing regulators Inverters Solenoid and relay drivers Deflection circuits PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol
2n6654.pdf
isc Silicon NPN Power Transistor 2N6654 DESCRIPTION High Voltage Capability High Current Current Capability Low Collector Saturation Voltage- High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Desinged for use in switching and linear applications in military and power conversion. Absolute maximum ratings(Ta
Otros transistores... 2N6650 , 2N6653 , 2N6653-1 , 2N6653-2 , 2N6653-3 , 2N6653A , 2N6653B , 2N6654 , D882 , 2N6654-2 , 2N6654A , 2N6654B , 2N6655 , 2N6655-1 , 2N6655-2 , 2N6655A , 2N6655B .
History: BDV18 | DTA401
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