KC856W . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: KC856W
Código: 3A_3B
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.15 W
Tensión colector-base (Vcb): 80 V
Tensión colector-emisor (Vce): 65 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 100 MHz
Capacitancia de salida (Cc): 4.5 pF
Ganancia de corriente contínua (hfe): 125
Paquete / Cubierta: SOT323
Búsqueda de reemplazo de transistor bipolar KC856W
KC856W Datasheet (PDF)
kc856w kc857w kc858w.pdf
SMD Type TransistorsPNP TransistorsBC856W,BC857W,BC858W(KC856W,KC857W,KC858W) Features Ideally suited for automatic insertion For Switching and AF Amplifier Applications1.Base2.Emitter3.Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitBC856W -80 Collector - Base Voltage BC857W VCBO -50BC858W -30BC856W -65 V Collector - Emitte
kc856bs.pdf
SMD Type TransistorsPNP TransistorsBC856BS (KC856BS) Features Low collector capacitance Low collector-emitter saturation voltage Closely matched current gain6 5 4 Reduces number of components and board spaceTR2TR11 2 3 Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -80 Collector - Emitter Voltage
kc856s.pdf
SMD Type TransistorsPNP General Purpose Double TransistorKC856S(BC856S)SOT-363Unit: mm+0.11.3-0.10.65FeaturesTwo transistors in one packageReduces number of components and board spaceNo mutual interference between the transistors. +0.1 +0.050.1-0.020.3-0.1+0.12.1-0.11E1 4E22B1 5B23C2 6C1Absolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollect
kc856a kc856b kc857a kc857b kc857c kc858a kc858b kc858c.pdf
SMD Type TransistorsPNP TransistorKC856A,B/KC857A,B,C/KC858A,B,C(BC856A,B/BC857A,B,C/BC858A,B,C)SOT-23Unit: mm+0.12.9-0.1+0.10.4-0.13FeaturesIdeally suited for automatic insertionFor Switching and AF Amplifier Applications12+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.11.Base2.Emitter3.collectorAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit
kc856 kc857 kc858.pdf
SMD Type TransistorsPNP TransistorsBC856~BC858 (KC856~KC858)SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features Ideally suited for automatic insertion For Switching and AF Amplifier Applications1 2+0.1+0.050.95 -0.1 0.1 -0.011.9+0.1-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol BC856 BC857 BC858 Unit C
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: CZTUX87
History: CZTUX87
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050