KC857T
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: KC857T
Código: 3E_3F_3G
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.15
W
Tensión colector-base (Vcb): 50
V
Tensión colector-emisor (Vce): 45
V
Tensión emisor-base (Veb): 6
V
Corriente del colector DC máxima (Ic): 0.1
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 100
MHz
Capacitancia de salida (Cc): 4.5
pF
Ganancia de corriente contínua (hfe): 125
Paquete / Cubierta:
SOT523
Búsqueda de reemplazo de transistor bipolar KC857T
KC857T
Datasheet (PDF)
..1. Size:478K kexin
kc857t.pdf 
SMD Type TransistorsPNP TransistorsBC857T (KC857T)SOT-523 U nit: m m+0.11.6 -0.1+0.11.0 -0.1+0.050.2 -0.05 0.150.05 Features2 1 Ideally suited for automatic insertion For Switching and AF Amplifier Applications30.30.050.5+0.1-0.11. Base2. Emitter3. Collecter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collec
9.1. Size:879K kexin
kc856w kc857w kc858w.pdf
SMD Type TransistorsPNP TransistorsBC856W,BC857W,BC858W(KC856W,KC857W,KC858W) Features Ideally suited for automatic insertion For Switching and AF Amplifier Applications1.Base2.Emitter3.Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitBC856W -80 Collector - Base Voltage BC857W VCBO -50BC858W -30BC856W -65 V Collector - Emitte
9.2. Size:69K kexin
kc856a kc856b kc857a kc857b kc857c kc858a kc858b kc858c.pdf
SMD Type TransistorsPNP TransistorKC856A,B/KC857A,B,C/KC858A,B,C(BC856A,B/BC857A,B,C/BC858A,B,C)SOT-23Unit: mm+0.12.9-0.1+0.10.4-0.13FeaturesIdeally suited for automatic insertionFor Switching and AF Amplifier Applications12+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.11.Base2.Emitter3.collectorAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit
9.3. Size:1190K kexin
kc856 kc857 kc858.pdf
SMD Type TransistorsPNP TransistorsBC856~BC858 (KC856~KC858)SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features Ideally suited for automatic insertion For Switching and AF Amplifier Applications1 2+0.1+0.050.95 -0.1 0.1 -0.011.9+0.1-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol BC856 BC857 BC858 Unit C
9.4. Size:926K kexin
kc857s.pdf
SMD Type TransistorsPNP TransistorsBC857S (KC857S) Features High current gain Low collector-emitter saturation voltage For AF input stages and driver applications Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -50VCEO -45 Collector - Emitter Voltage VVCES -50 Emitter - Base Voltage VEBO -5 Collector Cur
Otros transistores... 2N3200
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, 2N3211
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