KC857W . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: KC857W
Código: 3E_3F_3G
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.15 W
Tensión colector-base (Vcb): 50 V
Tensión colector-emisor (Vce): 45 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 100 MHz
Capacitancia de salida (Cc): 4.5 pF
Ganancia de corriente contínua (hfe): 125
Paquete / Cubierta: SOT323
Búsqueda de reemplazo de transistor bipolar KC857W
KC857W Datasheet (PDF)
kc856w kc857w kc858w.pdf
SMD Type TransistorsPNP TransistorsBC856W,BC857W,BC858W(KC856W,KC857W,KC858W) Features Ideally suited for automatic insertion For Switching and AF Amplifier Applications1.Base2.Emitter3.Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitBC856W -80 Collector - Base Voltage BC857W VCBO -50BC858W -30BC856W -65 V Collector - Emitte
kc857t.pdf
SMD Type TransistorsPNP TransistorsBC857T (KC857T)SOT-523 U nit: m m+0.11.6 -0.1+0.11.0 -0.1+0.050.2 -0.05 0.150.05 Features2 1 Ideally suited for automatic insertion For Switching and AF Amplifier Applications30.30.050.5+0.1-0.11. Base2. Emitter3. Collecter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collec
kc856a kc856b kc857a kc857b kc857c kc858a kc858b kc858c.pdf
SMD Type TransistorsPNP TransistorKC856A,B/KC857A,B,C/KC858A,B,C(BC856A,B/BC857A,B,C/BC858A,B,C)SOT-23Unit: mm+0.12.9-0.1+0.10.4-0.13FeaturesIdeally suited for automatic insertionFor Switching and AF Amplifier Applications12+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.11.Base2.Emitter3.collectorAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit
kc856 kc857 kc858.pdf
SMD Type TransistorsPNP TransistorsBC856~BC858 (KC856~KC858)SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features Ideally suited for automatic insertion For Switching and AF Amplifier Applications1 2+0.1+0.050.95 -0.1 0.1 -0.011.9+0.1-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol BC856 BC857 BC858 Unit C
kc857s.pdf
SMD Type TransistorsPNP TransistorsBC857S (KC857S) Features High current gain Low collector-emitter saturation voltage For AF input stages and driver applications Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -50VCEO -45 Collector - Emitter Voltage VVCES -50 Emitter - Base Voltage VEBO -5 Collector Cur
Otros transistores... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D882P , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
History: HUN5116
History: HUN5116
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: GN1A3Q | D965-KEHE | 2SD662B | 2SD661A | 2SC3080 | S9018L | S9012J | 2SA73L | 2SA73H | 2SA1015H | WT955 | TS13005CK | TP5001P3 | SS8550W-L | SS8550W-J | SS8550W-H | SS8550E | SS8550D | SS8550C | SS8050E | SS8050D