KMBT3904T Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: KMBT3904T

Código: 1N

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.15 W

Tensión colector-base (Vcb): 60 V

Tensión colector-emisor (Vce): 40 V

Tensión emisor-base (Veb): 6 V

Corriente del colector DC máxima (Ic): 0.2 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 300 MHz

Capacitancia de salida (Cc): 4 pF

Ganancia de corriente contínua (hFE): 100

Encapsulados: SOT523

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KMBT3904T datasheet

 ..1. Size:755K  kexin
 kmbt3904t.pdf pdf_icon

KMBT3904T

SMD Type Transistors NPN Transistors MMBT3904T (KMBT3904T) SOT-523 U nit m m +0. 1 1.6 -0. 1 +0.1 1.0 -0.1 +0.05 0.2 -0.05 0.15 0.05 Features Small Package 2 1 Complementary to MMBT3906T 3 0.3 0.05 +0.1 0.5 -0.1 1. Base 2. Emitter 3. Collecter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collec

 6.1. Size:125K  tysemi
 kmbt3904.pdf pdf_icon

KMBT3904T

Product specification KMBT3904(MMBT3904) SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4-0.1 3 Features Epitaxial planar die construction 12 +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 V Collector - Emitter Voltage VCEO 40 V Emitter - Base Voltage VEBO 6V Coll

 6.2. Size:538K  kexin
 kmbt3904dw.pdf pdf_icon

KMBT3904T

SMD Type Transistors NPN Transistors MMBT3904DW (KMBT3904DW) Features Epitaxial planar die construction Ideal for low power amplification and switching Dual NPN Transistors Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Emitter Voltage VCEO 40 V Emitter - Base Voltage VEBO 5 Collector Current -

 6.3. Size:71K  kexin
 kmbt3904.pdf pdf_icon

KMBT3904T

SMD Type Transistors NPN Transistors KMBT3904(MMBT3904) SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4-0.1 3 Features Epitaxial planar die construction 12 +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 V Collector - Emitter Voltage VCEO 40 V Emitter - Base Volta

MOSTRAR MÁS

Otros transistores... RN2108F, KMBT2222A, KMBT2222AT, KMBT2907, KMBT2907A, KMBT2907AT, KMBT3904, KMBT3904DW, 2SA1837, KMBT3906, KMBT3906DW, KMBT3906T, RN2110F, RN2112F, KMBT4401, KMBT4403, KMBT4403W