RN2112F Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: RN2112F

Código: XN_YN

Material: Si

Polaridad de transistor: Pre-Biased-PNP

Resistencia de Entrada Base R1 = 22 kOhm

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.1 W

Tensión colector-base (Vcb): 50 V

Tensión colector-emisor (Vce): 50 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 0.1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 200 MHz

Capacitancia de salida (Cc): 3 pF

Ganancia de corriente contínua (hFE): 120

Encapsulados: SOT490 SC81 ESM

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RN2112F datasheet

 ..1. Size:276K  toshiba
rn2112f rn2113f.pdf pdf_icon

RN2112F

RN2112F,RN2113F TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2112F,RN2113F Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit in mm With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN1112F, RN1113F Equivalent Circuit Absolute Maximum Ratings (

 0.1. Size:94K  toshiba
rn2112fs rn2113fs.pdf pdf_icon

RN2112F

RN2112FS,RN2113FS TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor Built-in Transistor) RN2112FS, RN2113FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit mm Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count enables the manufacture of ever more compact equipment and lowe

 0.2. Size:124K  toshiba
rn2112ft-rn2113ft.pdf pdf_icon

RN2112F

RN2112FT,RN2113FT TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN2112FT,RN2113FT Switching, Inverter Circuit, Interface Circuit and Unit mm Driver Circuit Applications High-density mount is possible because of devices housed in very thin TESM packages. Incorporating a bias resistor into a transistor reduces parts count.

 8.1. Size:290K  toshiba
rn2112mfv rn2113mfv.pdf pdf_icon

RN2112F

RN2112MFV,RN2113MFV TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) RN2112MFV,RN2113MFV Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit mm 1.2 0.05 Ultra-small package, suited to very high density mounting 0.8 0.05 Incorporating a bias resistor into the transistor reduces the number of

Otros transistores... KMBT2907AT, KMBT3904, KMBT3904DW, KMBT3904T, KMBT3906, KMBT3906DW, KMBT3906T, RN2110F, BC558, KMBT4401, KMBT4403, KMBT4403W, KMBT5088, KMBT5089, KMBT5401, KMBT5551, RN2114F