RN2115FT Todos los transistores

 8.1. Size:200K  toshiba
 rn2114mfv rn2115mfv rn2116mfv rn2117mfv rn2118mfv.pdf

RN2114MFV RN2118MFV TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2114MFV,RN2115MFV,RN2116MFV RN2117MFV,RN2118MFV Unit mm Switching Applications Inverter Circuit Applications 1.2 0.05 0.8 0.05 Interface Circuit Applications Driver Circuit Applications 1 Ultra-small package, suited to very high density mounting 2 3 Incorporating a bias resis

 9.1. Size:175K  toshiba
 rn2114ft rn2118ft.pdf

RN2114FT RN2118FT TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2114FT, RN2115FT, RN2116FT, RN2117FT, RN2118FT Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit mm Built-in bias resistors Enabling simplified circuit design Enabling reduction in the quantity of parts and manufacturing process Complementary to the RN1114FT

 9.2. Size:102K  toshiba
 rn2110-rn2111.pdf

RN2110,RN2111 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2110,RN2111 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit mm With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN1110, RN1111 Equivalent Circuit Maximum Ratings (Ta = 25 C) Cha

 9.3. Size:179K  toshiba
 rn2114f rn2118f.pdf

RN2114F RN2118F TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2114F,RN2115F,RN2116F,RN2117F,RN2118F Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit mm With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN1114F RN1118F Equivalent Circuit and B

 9.4. Size:276K  toshiba
 rn2112f rn2113f.pdf

RN2112F,RN2113F TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2112F,RN2113F Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit in mm With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN1112F, RN1113F Equivalent Circuit Absolute Maximum Ratings (

 9.5. Size:94K  toshiba
 rn2112fs rn2113fs.pdf

RN2112FS,RN2113FS TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor Built-in Transistor) RN2112FS, RN2113FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit mm Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count enables the manufacture of ever more compact equipment and lowe

 9.6. Size:161K  toshiba
 rn2114 rn2118.pdf

RN2114 RN2118 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2114, RN2115, RN2116, RN2117, RN2118 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit mm Built-in bias resistors Simplified circuit design Fewer parts and simplified manufacturing process Complementary to RN1107 RN1109 Equivalent Circuit and Bias Resistor V

 9.7. Size:290K  toshiba
 rn2112mfv rn2113mfv.pdf

RN2112MFV,RN2113MFV TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) RN2112MFV,RN2113MFV Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit mm 1.2 0.05 Ultra-small package, suited to very high density mounting 0.8 0.05 Incorporating a bias resistor into the transistor reduces the number of

 9.8. Size:124K  toshiba
 rn2112ft-rn2113ft.pdf

RN2112FT,RN2113FT TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN2112FT,RN2113FT Switching, Inverter Circuit, Interface Circuit and Unit mm Driver Circuit Applications High-density mount is possible because of devices housed in very thin TESM packages. Incorporating a bias resistor into a transistor reduces parts count.

 9.9. Size:163K  toshiba
 rn2110mfv rn2111mfv.pdf

RN2110MFV,RN2111MFV TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) RN2110MFV,RN2111MFV Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit mm Ultra-small package, suited to very high density mounting 1.2 0.05 Incorporating a bias resistor into the transistor reduces the number of parts, so 0

 9.10. Size:134K  toshiba
 rn2112ct rn2113ct.pdf

RN2112CT,RN2113CT TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor Built-in Transistor) RN2112CT,RN2113CT Switching Applications Unit mm Inverter Circuit Applications 0.6 0.05 Interface Circuit Applications 0.5 0.03 Driver Circuit Applications Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count enab

 9.11. Size:109K  toshiba
 rn2112-rn2113.pdf

RN2112,RN2113 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2112,RN2113 Switching, Inverter Circuit, Interface Circuit Unit mm and Driver Circuit Applications With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN1112, RN1113 Equivalent Circuit Maximum Ratings (Ta = 25 C)

 9.12. Size:153K  toshiba
 rn2112act rn2113act.pdf

RN2112ACT,RN2113ACT TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor Built-in Transistor) RN2112ACT,RN2113ACT Switching Applications Unit mm Inverter Circuit Applications 0.6 0.05 Interface Circuit Applications 0.5 0.03 Driver Circuit Applications Extra small package (CST3) is applicable for extra high density fabrication.

 9.13. Size:114K  toshiba
 rn2110fs rn2111fs.pdf

RN2110FS,RN2111FS TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN2110FS,RN2111FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit mm Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count enable the manufacture of ever more compact equipment and save a

 9.14. Size:122K  toshiba
 rn2110ft-rn2111ft.pdf

RN2110FT,RN2111FT TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN2110FT,RN2111FT Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit mm High-density mount is possible because of devices housed in very thin TESM packages. Incorporating a bias resistor into a transistor reduces parts count.

 9.15. Size:154K  toshiba
 rn2110ct rn2111ct.pdf

RN2110CT,RN2111CT TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN2110CT,RN2111CT Switching Applications Unit mm Inverter Circuit Applications 0.6 0.05 Interface Circuit Applications 0.5 0.03 Driver Circuit Applications Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count en

 9.16. Size:154K  toshiba
 rn2119mfv.pdf

RN2119MFV TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2119MFV Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit mm With built-in bias resistors 1.2 0.05 Simplify circuit design 0.8 0.05 Reduce a quantity of parts and manufacturing process Complementary to RN1119MFV 1 Equivalent Circuit 2 3 1.BASE VESM

 9.17. Size:109K  toshiba
 rn2110f-rn2111f.pdf

RN2110F,RN2111F TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2110F,RN2111F Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit mm With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN1110F, RN1111F Equivalent Circuit Maximum Ratings (Ta = 25 C

 9.18. Size:152K  toshiba
 rn2110act rn2111act.pdf

RN2110ACT,RN2111ACT TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN2110ACT,RN2111ACT Switching Applications Unit mm Inverter Circuit Applications 0.6 0.05 Interface Circuit Applications 0.5 0.03 Driver Circuit Applications Extra small package (CST3) is applicable for extra high density fabrication. Incorpora