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CSC2712 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: CSC2712
   Código: 1E_1F_1G
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.15 W
   Tensión colector-base (Vcb): 60 V
   Tensión colector-emisor (Vce): 50 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 0.15 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 80 MHz
   Ganancia de corriente contínua (hfe): 70
   Paquete / Cubierta: SOT23
 

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CSC2712 Datasheet (PDF)

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CSC2712

IS/ISO 9002 IS / IECQC 700000Lic# QSC/L- 000019.2 IS / IECQC 750100Continental Device India LimitedAn IS/ISO 9002 and IECQ Certified ManufacturerSOT-23 Formed SMD Package CSC2712SILICON PLANAR EPITAXIAL TRANSISTORN-P-N transistorMarkingPACKAGE OUTLINE DETAILSCSC2712Y=1EALL DIMENSIONS IN mmCSC2712GR(G)=1FCSC2712BL(L)=1GPin configuration1 = BASE2 = EMITTER3 = COLLE

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CSC2712

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN SILICON PLANAR EPITAXIAL TRANSISTOR CSC2713PIN CONFIGURATION (NPN)SOT-231 = BASE2 = EMITTERFormed SMD Package3 = COLLECTOR312MARKINGCSC2713 =13CSC2713G =13GCSC2713L =13LComplementary CSA1163Audio Frequency General Purpose Amplifier Applications ABSOLUTE MAXIMUM RATING

 9.1. Size:274K  cdil
 csc2786 mf lf kf.pdf pdf_icon

CSC2712

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN SILICON PLANAR EPITAXIAL TRANSISTOR CSC2786TO-92Plastic PackageBCEFor use in FM RF AmplifierABSOLUTE MAXIMUM RATINGS (Ta=25C)DESCRIPTION SYMBOL VALUE UNITSVCEOCollector Emitter Voltage 20 VVCBOCollector Base Voltage 30 VVEBOEmitter Base Voltage 4 VIBBase Current 20

Otros transistores... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , TIP42C , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

History: 2SA1177F

 

 
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