2N6676 Todos los transistores

 ..1. Size:70K  microsemi
 2n6676 2n6678 2n6691 2n6693.pdf

TECHNICAL DATA NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/538 Devices Qualified Level JAN 2N6676 2N6678 2N6691 2N6693 JANTX JANTXV MAXIMUM RATINGS Ratings Symbol 2N6676 2N6678 Unit 2N6691 2N6693 Collector-Emitter Voltage 300 400 Vdc VCEO Collector-Base Voltage 450 650 Vdc VCBO Collector-Base Voltage 450 650 Vdc VCEX Emitter-Base Voltage 8.0 Vdc VE

 ..2. Size:174K  aeroflex
 2n6676 2n6678.pdf

NPN High Power Silicon Transistors 2N6676 & 2N6678 Features Available in JAN, JANTX, and JANTXV per MIL-PRF-19500/538 TO-3 (TO-204AA) Package Maximum Ratings Ratings Symbol 2N6676 2N6678 Units Collector - Emitter Voltage VCEO 300 400 Vdc Collector - Base Voltage VCBO 450 650 Vdc Collector - Base Voltage VCBX 450 650 Vdc Emitter - Base Voltage VEBO 8.0 Vdc Base Current IB 5.

 ..3. Size:131K  inchange semiconductor
 2n6676 2n6677 2n6678.pdf

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6676 2N6677 2N6678 DESCRIPTION With TO-3 package High voltage capability Fast switching speeds Low saturation voltage APPLICATIONS Designed for high voltage switching applications such as Off-line power supplies Converter circuits Pulse width modulated regulators PINNING (See F

 0.1. Size:137K  mospec
 2n6676-78.pdf

A A A

 0.2. Size:916K  no
 2n6676-t1-t3 2n6678-t1-t3 2n6691 2n6693.pdf

The documentation and process conversion measures INCH-POUND necessary to comply with this document shall be completed by 13 February 2014. MIL-PRF-19500/538G 13 December 2013 SUPERSEDING MIL-PRF-19500/538F 10 February 2011 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER, TYPES 2N6676, 2N6678, 2N6676T1, 2N6678T1, 2N6676T3, 2N6678T3, 2

 9.1. Size:345K  no
 2n6671.pdf

 9.2. Size:590K  semelab
 2n6678m3a.pdf

SILICON MULTI-EPITAXIAL NPN TRANSISTOR 2N6678M3A High Voltage, Fast Switching. Hermetic TO-254AA Isolated Metal Package. Ideally suited for PWM Regulators, Power Supplies and Converter Circuits Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25 C unless otherwise stated) VCBO Collector Base Voltage 650V VCEX VBE = -1.5V Collector Emitt

 9.3. Size:149K  jmnic
 2n6674.pdf

JMnic Product Specification Silicon NPN Power Transistors 2N6674 2N6675 DESCRIPTION With TO-3 package High voltage,high speed APPLICATIONS Switching regulators Inverters Solenoid and relay drivers Deflection circuits PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta= ) SYMBOL P

 9.4. Size:150K  jmnic
 2n6671 2n6672 2n6673.pdf

JMnic Product Specification Silicon NPN Power Transistors 2N6671 2N6672 2N6673 DESCRIPTION With TO-3 package Low saturation voltage Fast switching speed High voltage ratings APPLICATIONS Off-line power supplies High-voltage inverters Switching regulators PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector A

 9.5. Size:60K  microsemi
 2n6674 2n6675 2n6689 2n6690.pdf

TECHNICAL DATA NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/537 Devices Qualified Level JAN 2N6674 2N6675 2N6689 2N6690 JANTX JANTXV MAXIMUM RATINGS Ratings Symbol 2N6674 2N6675 Unit 2N6689 2N6690 Collector-Emitter Voltage 300 400 Vdc VCEO Collector-Base Voltage 450 650 Vdc VCBO Collector-Base Voltage 450 650 Vdc VCEX Emitter-Base Voltage 7.0 Vdc VE

 9.6. Size:177K  aeroflex
 2n6674 2n6675.pdf

NPN High Power Silicon Transistors 2N6674 & 2N6675 Features Available in JAN, JANTX, and JANTXV per MIL-PRF-19500/537 TO-3 (TO-204AA) Package Maximum Ratings Ratings Symbol 2N6674 2N6675 Units Collector - Emitter Voltage VCEO 300 400 Vdc Collector - Base Voltage VCBO 450 650 Vdc Collector - Base Voltage VCBX 450 650 Vdc Emitter - Base Voltage VEBO 7.0 Vdc Base Current IB 5.

 9.7. Size:167K  cn sptech
 2n6678.pdf

SPTECH Product Specification SPTECH Silicon NPN Power Transistors 2N6678 DESCRIPTION High Voltage Capability Fast Switching Speed Low Saturation Voltage APPLICATIONS Designed for high voltage switching applications such as Off-line power supplies Converter circuits PWM regulators ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Emitter Volt

 9.8. Size:192K  inchange semiconductor
 2n6678.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistors 2N6678 DESCRIPTION High Voltage Capability Fast Switching Speed Low Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage switching applications such as Off-line power supplies Converter circuits PWM regulators ABSOLUTE MAXIM

 9.9. Size:117K  inchange semiconductor
 2n6671 2n6672 2n6673.pdf

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6671 2N6672 2N6673 DESCRIPTION With TO-3 package Low saturation voltage Fast switching speed High voltage ratings APPLICATIONS Off-line power supplies High-voltage inverters Switching regulators PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol

 9.10. Size:176K  inchange semiconductor
 2n6674 2n6675.pdf

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors 2N6674/6675 DESCRIPTION High Power Dissipation High Switching Speed Collector-Emitter Breakdown Voltage- V(BR)CEO= 300V(Min)- 2N6674 = 400V(Min)- 2N6675 APPLICATIONS Designed for high voltage switching applications such as Switching regulators Inverters Solenoid and relay d