2N6678 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

TECHNICAL DATA NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/538 Devices Qualified Level JAN 2N6676 2N6678 2N6691 2N6693 JANTX JANTXV MAXIMUM RATINGS Ratings Symbol 2N6676 2N6678 Unit 2N6691 2N6693 Collector-Emitter Voltage 300 400 Vdc VCEO Collector-Base Voltage 450 650 Vdc VCBO Collector-Base Voltage 450 650 Vdc VCEX Emitter-Base Voltage 8.0 Vdc VE

NPN High Power Silicon Transistors2N6676 & 2N6678Features Available in JAN, JANTX, and JANTXV per MIL-PRF-19500/538 TO-3 (TO-204AA) PackageMaximum RatingsRatings Symbol 2N6676 2N6678 UnitsCollector - Emitter Voltage VCEO 300 400 VdcCollector - Base Voltage VCBO 450 650 VdcCollector - Base Voltage VCBX 450 650 VdcEmitter - Base Voltage VEBO 8.0 VdcBase Current IB 5.

SPTECH Product SpecificationSPTECH Silicon NPN Power Transistors 2N6678DESCRIPTIONHigh Voltage CapabilityFast Switching SpeedLow Saturation VoltageAPPLICATIONSDesigned for high voltage switching applications such as:Off-line power suppliesConverter circuitsPWM regulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Emitter Volt

INCHANGE Semiconductorisc Silicon NPN Power Transistors 2N6678DESCRIPTIONHigh Voltage CapabilityFast Switching SpeedLow Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage switching applications such as:Off-line power suppliesConverter circuitsPWM regulatorsABSOLUTE MAXIM

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6676 2N6677 2N6678 DESCRIPTION With TO-3 package High voltage capability Fast switching speeds Low saturation voltage APPLICATIONS Designed for high voltage switching applications such as : Off-line power supplies Converter circuits Pulse width modulated regulators PINNING (See F

The documentation and process conversion measures INCH-POUND necessary to comply with this document shall be completed by 13 February 2014. MIL-PRF-19500/538G 13 December 2013 SUPERSEDING MIL-PRF-19500/538F 10 February 2011 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER, TYPES 2N6676, 2N6678, 2N6676T1, 2N6678T1, 2N6676T3, 2N6678T3, 2

SILICON MULTI-EPITAXIAL NPN TRANSISTOR 2N6678M3A High Voltage, Fast Switching. Hermetic TO-254AA Isolated Metal Package. Ideally suited for PWM Regulators, Power Supplies and Converter Circuits Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise stated) VCBO Collector Base Voltage 650V VCEX VBE = -1.5V Collector Emitt

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JMnic Product Specification Silicon NPN Power Transistors 2N6674 2N6675 DESCRIPTION With TO-3 package High voltage,high speed APPLICATIONS Switching regulators Inverters Solenoid and relay drivers Deflection circuits PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol 3 CollectorAbsolute maximum ratings(Ta=) SYMBOL P

JMnic Product Specification Silicon NPN Power Transistors 2N6671 2N6672 2N6673 DESCRIPTION With TO-3 package Low saturation voltage Fast switching speed High voltage ratings APPLICATIONS Off-line power supplies High-voltage inverters Switching regulators PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol 3 CollectorA

TECHNICAL DATA NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/537 Devices Qualified Level JAN 2N6674 2N6675 2N6689 2N6690 JANTX JANTXV MAXIMUM RATINGS Ratings Symbol 2N6674 2N6675 Unit 2N6689 2N6690 Collector-Emitter Voltage 300 400 Vdc VCEO Collector-Base Voltage 450 650 Vdc VCBO Collector-Base Voltage 450 650 Vdc VCEX Emitter-Base Voltage 7.0 Vdc VE

NPN High Power Silicon Transistors2N6674 & 2N6675Features Available in JAN, JANTX, and JANTXV per MIL-PRF-19500/537 TO-3 (TO-204AA) PackageMaximum RatingsRatings Symbol 2N6674 2N6675 UnitsCollector - Emitter Voltage VCEO 300 400 VdcCollector - Base Voltage VCBO 450 650 VdcCollector - Base Voltage VCBX 450 650 VdcEmitter - Base Voltage VEBO 7.0 VdcBase Current IB 5.

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6671 2N6672 2N6673 DESCRIPTION With TO-3 package Low saturation voltage Fast switching speed High voltage ratings APPLICATIONS Off-line power supplies High-voltage inverters Switching regulators PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors 2N6674/6675 DESCRIPTION High Power Dissipation High Switching Speed Collector-Emitter Breakdown Voltage- : V(BR)CEO= 300V(Min)- 2N6674 = 400V(Min)- 2N6675 APPLICATIONS Designed for high voltage switching applications such as: Switching regulators Inverters Solenoid and relay d