2N6691 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2N6691
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 175 W
Tensión colector-base (Vcb): 450 V
Tensión colector-emisor (Vce): 300 V
Tensión emisor-base (Veb): 8 V
Corriente del colector DC máxima (Ic): 15 A
Temperatura operativa máxima (Tj): 200 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 15 MHz
Ganancia de corriente contínua (hfe): 8
Paquete / Cubierta: TO61
Búsqueda de reemplazo de transistor bipolar 2N6691
2N6691 Datasheet (PDF)
2n6676-t1-t3 2n6678-t1-t3 2n6691 2n6693.pdf
The documentation and process conversion measures INCH-POUND necessary to comply with this document shall be completed by 13 February 2014. MIL-PRF-19500/538G 13 December 2013 SUPERSEDING MIL-PRF-19500/538F 10 February 2011 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER, TYPES 2N6676, 2N6678, 2N6676T1, 2N6678T1, 2N6676T3, 2N6678T3, 2
2n6676 2n6678 2n6691 2n6693.pdf
TECHNICAL DATA NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/538 Devices Qualified Level JAN 2N6676 2N6678 2N6691 2N6693 JANTX JANTXV MAXIMUM RATINGS Ratings Symbol 2N6676 2N6678 Unit 2N6691 2N6693 Collector-Emitter Voltage 300 400 Vdc VCEO Collector-Base Voltage 450 650 Vdc VCBO Collector-Base Voltage 450 650 Vdc VCEX Emitter-Base Voltage 8.0 Vdc VE
2n6674 2n6675 2n6689 2n6690.pdf
TECHNICAL DATA NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/537 Devices Qualified Level JAN 2N6674 2N6675 2N6689 2N6690 JANTX JANTXV MAXIMUM RATINGS Ratings Symbol 2N6674 2N6675 Unit 2N6689 2N6690 Collector-Emitter Voltage 300 400 Vdc VCEO Collector-Base Voltage 450 650 Vdc VCBO Collector-Base Voltage 450 650 Vdc VCEX Emitter-Base Voltage 7.0 Vdc VE
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050