BUX77ASMD Todos los transistores

BUX77ASMD Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 0.89 (0.035) min. Ceramic Surface Mount 3.70 (0.146) 3.70 (0.146) 3.60 (0.142) 3.41 (0.134) 3.41 (0.134) Max. Package for High Reliability Applications 1 3 Bipolar NPN Device. 2 VCEO = 80V IC = 5A 9.67 (0.381) All Semelab hermetically sealed products 9.38 (0.369) 0.50 (0.020) 0.26 (0

SILICON PLANAR EPITAXIAL NPN/PNP TRANSISTORS BUX77A-220M BUX78A-220M High Power Hermetic TO220 Isolated Metal Package Ideally suited for Driver Circuits, Switching and Amplifier Applications Screening Options Available BUX77A BUX78A ABSOLUTE MAXIMUM RATINGS (TC = 25 C unless otherwise stated) NPN PNP VCBO Collector Base Voltage 100V -100V VCEO

SILICON PLANAR EPITAXIAL NPN/PNP TRANSISTORS BUX77A / BUX78A High Power Hermetic TO-66 Metal Package Ideally suited for Driver Circuits, Switching and Amplifier Applications Screening Options Available BUX77A BUX78A ABSOLUTE MAXIMUM RATINGS (TC = 25 C unless otherwise stated) NPN PNP VCBO Collector Base Voltage 100V -100V VCEO Collector Emitt

isc Silicon NPN Power Transistor BUX77A DESCRIPTION Contunuous Collector Current I = 8A C Collector Power Dissipation- P = 50W @T = 25 C C Collector-Emitter Sustaining Voltage- V = 80V(Min) CEO(SUS) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in switching regulators and general purpose power ampl