BUX78A-220M . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: BUX78A-220M
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 50 W
   Tensión colector-base (Vcb): 100 V
   Tensión colector-emisor (Vce): 80 V
   Tensión emisor-base (Veb): 6 V
   Corriente del colector DC máxima (Ic): 8 A
   Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS

   Transición de frecuencia (ft): 30 MHz
   Ganancia de corriente contínua (hfe): 50
   Paquete / Cubierta: TO220M

Búsqueda de reemplazo de transistor bipolar BUX78A-220M

BUX78A-220M Datasheet (PDF)

..1. Size:810K semelab
bux78a-220m bux77a-220m.pdf

SILICON PLANAR EPITAXIAL NPN/PNP TRANSISTORS BUX77A-220M BUX78A-220M High Power Hermetic TO220 Isolated Metal Package Ideally suited for Driver Circuits, Switching and Amplifier Applications Screening Options Available BUX77A BUX78A ABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise stated) NPN PNP VCBO Collector Base Voltage 100V -100V VCEO

8.1. Size:10K semelab
bux78asmd.pdf

BUX78ASMDDimensions in mm (inches). Bipolar PNP Device in a Hermetically sealed 0.89(0.035)min.Ceramic Surface Mount 3.70 (0.146) 3.70 (0.146) 3.60 (0.142)3.41 (0.134) 3.41 (0.134) Max.Package for High Reliability Applications 1 3Bipolar PNP Device. 2VCEO = 80V IC = 8A 9.67 (0.381)All Semelab hermetically sealed products 9.38 (0.369)0.50 (0.020)0.26 (0

8.2. Size:92K semelab
bux77a bux78a.pdf

SILICON PLANAR EPITAXIAL NPN/PNP TRANSISTORS BUX77A / BUX78A High Power Hermetic TO-66 Metal Package Ideally suited for Driver Circuits, Switching and Amplifier Applications Screening Options Available BUX77A BUX78A ABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise stated) NPN PNP VCBO Collector Base Voltage 100V -100V VCEO Collector Emitt

8.3. Size:211K inchange semiconductor
bux78a.pdf

isc Silicon PNP Power Transistor BUX78ADESCRIPTIONContunuous Collector Current-I = -8ACCollector Power Dissipation-: P = 50W @T = 25C CCollector-Emitter Sustaining Voltage-: V = -80V(Min)CEO(SUS)Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in switching regulators and general purposepower am

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: DRA4144E

Liste

Recientemente añadidas las descripciónes de los transistores:

BJT: GN1A3Q | D965-KEHE | 2SD662B | 2SD661A | 2SC3080 | S9018L | S9012J | 2SA73L | 2SA73H | 2SA1015H | WT955 | TS13005CK | TP5001P3 | SS8550W-L | SS8550W-J | SS8550W-H | SS8550E | SS8550D | SS8550C | SS8050E | SS8050D