2N67 Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2N67
Material: Ge
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 2 W
Tensión colector-base (Vcb): 25 V
Corriente del colector DC máxima (Ic): 1.5 A
Temperatura operativa máxima (Tj): 70 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 0.1 MHz
Encapsulados: MM1
Búsqueda de reemplazo de 2N67
- Selecciónⓘ de transistores por parámetros
2N67 datasheet
2n6762 irf430.pdf
PD - 90336F IRF430 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6762 HEXFET TRANSISTORS JANTXV2N6762 THRU-HOLE (TO-204AA/AE) [REF MIL-PRF-19500/542] 500V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF430 500V 1.5 4.5A The HEXFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The efficient geometry and unique proces
2n6790u.pdf
PD - 93984A REPETITIVE AVALANCHE AND dv/dt RATED IRFE220 HEXFET TRANSISTORS JANTX2N6790U SURFACE MOUNT (LCC-18) REF MIL-PRF-19500/555 200V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRFE220 100V 0.80 2.8A LCC-18 The leadless chip carrier (LCC) package represents the logical next step in the continual evolution of surface Features mount technology. Desinged t
2n6788 irff120.pdf
PD - 90426C IRFF120 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6788 HEXFET TRANSISTORS JANTXV2N6788 THRU-HOLE (TO-205AF) REF MIL-PRF-19500/555 100V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRFF120 100V 0.30 6.0A The HEXFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The efficient geometry and unique processin
2n6768 irf350.pdf
PD - 90339F IRF350 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6768 HEXFET TRANSISTORS JANTXV2N6768 THRU-HOLE (TO-204AA/AE) [REF MIL-PRF-19500/543] 400V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF350 400V 0.300 14A The HEXFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The efficient geometry and unique proces
2n6770 irf450.pdf
PD - 90330F REPETITIVE AVALANCHE AND dv/dt RATED IRF450 HEXFET TRANSISTORS JANTX2N6770 THRU-HOLE (TO-204AA/AE) JANTXV2N6770 500V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF450 500V 0.400 12A The HEXFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest S
2n6796u irfe130.pdf
Provisional Data Sheet No. PD - 9.1666A IRFE130 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6796U HEXFET TRANSISTOR JANTXV2N6796U [REF MIL-PRF-19500/557] N-CHANNEL 100Volt, 0.18 Product Summary , HEXFET The leadless chip carrier (LCC) package represents Part Number BVDSS RDS(on) ID the logical next step in the continual evolution of IRFE130 100V 0.18 8.0A
2n6760 irf330.pdf
PD - 90335F IRF330 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6760 HEXFET TRANSISTORS JANTXV2N6760 THRU-HOLE (TO-204AA/AE) [REF MIL-PRF-19500/542] 400V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF330 400V 1.00 5.5A The HEXFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The efficient geometry and unique proces
2n6782 irff110.pdf
PD - 90423C IRFF110 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6782 HEXFET TRANSISTORS JANTXV2N6782 THRU-HOLE (TO-205AF) REF MIL-PRF-19500/556 100V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRFF110 100V .60 3.5A The HEXFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The efficient geometry and unique processing
2n6786u.pdf
PD - 91782 IRFE310 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6786U HEXFET TRANSISTOR JANTXV2N6786U [REF MIL-PRF-19500/556] N - CHANNEL 400Volt, 3.6 , HEXFET Product Summary The leadless chip carrier (LCC) package represents Part Number BVDSS RDS(on) ID the logical next step in the continual evolution of IRFE310 400V 3.6 1.25A surface mount technology. T
2n6792 irff320.pdf
PD -90428C IRFF320 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6792 HEXFET TRANSISTORS JANTXV2N6792 THRU-HOLE (TO-205AF) REF MIL-PRF-19500/555 400V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRFF320 400V 1.8 2.0A The HEXFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The efficient geometry and unique processing
2n6756 irf130.pdf
PD - 90333F IRF130 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6756 HEXFET TRANSISTORS JANTXV2N6756 THRU-HOLE (TO-204AA/AE) [REF MIL-PRF-19500/542] 100V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF130 100V 0.18 14A The HEXFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The efficient geometry and unique process
2n6790 irff220.pdf
PD - 90427C IRFF220 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6790 HEXFET TRANSISTORS JANTXV2N6790 THRU-HOLE (TO-205AF) REF MIL-PRF-19500/555 200V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRFF220 200V 0.80 3.5A The HEXFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The efficient geometry and unique processin
2n6794u.pdf
PD - 93986A IRFE420 JANTX2N6794U REPETITIVE AVALANCHE AND dv/dt RATED JANTXV2N6794U HEXFET TRANSISTORS REF MIL-PRF-19500/555 SURFACE MOUNT (LCC-18) 500V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRFE420 500V 3.0 1.4A LCC-18 The leadless chip carrier (LCC) package represents the logical next step in the continual evolution of surface Features mount technology.
2n6758 irf230.pdf
PD - 90334F IRF230 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6758 HEXFET TRANSISTORS JANTXV2N6758 THRU-HOLE (TO-204AA/AE) [REF MIL-PRF-19500/542] 200V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF230 200V 0.40 9.0A TO-3 The HEXFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The efficient geometry and unique
2n6798 irff230.pdf
PD -90431C IRFF230 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6798 HEXFET TRANSISTORS JANTXV2N6798 THRU-HOLE (TO-205AF) REF MIL-PRF-19500/557 200V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRFF230 200V 0.40 5.5A The HEXFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The efficient geometry and unique processing
2n6786 irff310.pdf
PD - 90425C IRFF310 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6786 HEXFET TRANSISTORS JANTXV2N6786 THRU-HOLE (TO-205AF) REF MIL-PRF-19500/556 400V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRFF310 400V 3.6 1.25A The HEXFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The efficient geometry and unique processin
2n6792u.pdf
PD - 93985A IRFE320 JANTX2N6792U REPETITIVE AVALANCHE AND dv/dt RATED JANTXV2N6792U HEXFET TRANSISTORS REF MIL-PRF-19500/555 SURFACE MOUNT (LCC-18) 400V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRFE320 400V 1.8 1.8A LCC-18 The leadless chip carrier (LCC) package represents the logical next step in the continual evolution of surface Features mount technology.
2n6766 irf250.pdf
PD - 90338E IRF250 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6766 HEXFET TRANSISTORS JANTXV2N6766 THRU-HOLE (TO-204AA/AE) [REF MIL-PRF-19500/543] 200V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF250 200V 0.085 30A The HEXFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. TO-3 The efficient geometry and unique
2n6784 irff210.pdf
PD - 90424C IRFF210 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6784 HEXFET TRANSISTORS JANTXV2N6784 THRU-HOLE (TO-205AF) REF MIL-PRF-19500/556 200V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRFF210 200V 1.5 2.25A The HEXFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The efficient geometry and unique processin
2n6794 irff420.pdf
PD - 90429C IRFF420 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6794 HEXFET TRANSISTORS JANTXV2N6794 THRU-HOLE (TO-205AF) REF MIL-PRF-19500/555 500V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRFF420 500V 3.0 1.5A The HEXFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The efficient geometry and unique processing
2n6790.pdf
2N6790 Data Sheet December 2001 3.5A, 200V, 0.800 Ohm, N-Channel Power Features MOSFET 3.5A, 200V The 2N6790 is an N-Channel enhancement mode silicon rDS(ON) = 0.800 gate power MOS field effect transistor designed for SOA is Power Dissipation Limited applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high
2n6716 2n6717 2n6718 2n6728 2n6729 2n6730.pdf
145 Adams Avenue, Hauppauge, NY 11788 USA Tel (631) 435-1110 Fax (631) 435-1824
2n6714 2n6715 2n6726 2n6727.pdf
145 Adams Avenue, Hauppauge, NY 11788 USA Tel (631) 435-1110 Fax (631) 435-1824
2n6732.pdf
PNP SILICON PLANAR 2N6732 MEDIUM POWER TRANSISTOR ISSUE 1 MARCH 94 T 8 V I V i I E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. T V IT II V I V V II i V I V 8 V i V I V V I I i II I Di i i T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25 C unless otherwise stated). T I T IT DITI II V V I I V I II i V 8 V I I V I i V V I I
2n6716 2n6717 2n6718.pdf
NPN SILICON PLANAR 2N6716 2N6717 MEDIUM POWER TRANSISTORS 2N6718 ISSUE 1 MARCH 94 T V I V i I E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. T 8 IT II V I V 8 V II i V I V 8 V i V I V V I I i II I Di i i T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25 C unless otherwise stated). T 8 IT DITI I I I II V 8 V I I V I II i V 8 V I I
2n6731.pdf
NPN SILICON PLANAR 2N6731 MEDIUM POWER TRANSISTOR ISSUE 1 MARCH 94 T 8 V I V i I E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. T V IT II V I V V II i V I V 8 V i V I V V I I i II I Di i i T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25 C unless otherwise stated). T I T IT DITI II V V I I V I II i V 8 V I I V I i V V I I
2n6726 2n6727.pdf
PNP SILICON PLANAR 2N6726 MEDIUM POWER TRANSISTORS 2N6727 ISSUE 1 MARCH 94 T V I V i I E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. T IT II V I V V II i V I V V i V I V V I I i II I Di i i T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25 C unless otherwise stated). T IT DITI I I II V V I I V I II i V V I I V I i V V I I
2n6728 2n6729 2n6730.pdf
PNP SILICON PLANAR 2N6728 2N6729 MEDIUM POWER TRANSISTORS 2N6730 ISSUE 1 MARCH 94 T V I V i I E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. T 8 IT II V I V 8 V II i V I V 8 V i V I V V I I i II I Di i i T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25 C unless otherwise stated). T 8 IT DITI I I I II V 8 V I I V I II i V 8 V I I
2n6714 2n6715.pdf
NPN SILICON PLANAR 2N6714 MEDIUM POWER TRANSISTORS 2N6715 ISSUE 1 MARCH 94 T V I V i I E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. T IT II V I V V II i V I V V i V I V V I I i II I Di i i T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25 C unless otherwise stated). T IT DITI I I II V V I I V I II i V V I I V I i V V I I
2n6796 2n6798 2n6800 2n6802.pdf
2N6796, JANTX2N6796 JANTXV2N6796 2N6800, JANTX2N6800, JANTXV2N6800 2N6798, JANTX2N6798 JANTXV2N6798 2N6802, JANTX2N6802, JANTXV2N6802 JANTX, JANTXV POWER MOSFET IN TO-205 AF PACKAGE, QUALIFIED TO MIL-PRF-19500/557 100 V, 200 V, 400 V & 500 V, N-Channel, Enhancement Mode MOSFET Power Transistor FEATURES Low RDS(on) Ease of Paralleling Qualified to MIL-PRF-19500/557 DESCRIPTIO
2n6764 2n6766 2n6768 2n6770.pdf
2N6764, JANTX2N6764, JANTXV2N6764 2N6768, JANTX2N6768, JANTXV2N6768 2N6766, JANTX2N6766, JANTXV2N6766 2N6770, JANTX2N6770, JANTXV2N6770 JANTX, JANTXV POWER MOSFET IN TO-204 PACKAGE, QUALIFIED TO MIL-PRF-19500/543 100V Thru 500V, Up to 38A, N-Channel, Enhancement Mode MOSFET Power Transistor FEATURES Low RDS(on) Ease of Paralleling Qualified to MIL-PRF-19500/543 DESCRIPTION
2n6718.pdf
UNISONIC TECHNOLOGIES CO., LTD 2N6718 NPN SILICON TRANSISTOR NPN GENERAL PLANAR TRANSISTOR DESCRIPTION The UTC 2N6718 is designed for general purpose medium power amplifier and switching applications. FEATURES * High Power 850mW * High Current 1A ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Plating Halogen Free 1 2 3 2N6
2n6796lcc4.pdf
2N6796LCC4 MECHANICAL DATA Dimensions in mm (inches) N-CHANNEL 9.14 (0.360) 1.27 (0.050) 8.64 (0.340) POWER MOSFET 1.07 (0.040) 2.16 (0.085) 12 13 14 15 16 1.39 (0.055) 1.02 (0.040) 11 17 10 18 7.62 (0.300) VDSS = 100V 7.12 (0.280) 9 1 0.76 (0.030) 8 2 0.51 (0.020) ID = 7.4A 0.33 (0.013) Rad. RDS(ON) = 0.18 0.08 (0.003) 7 6 5 4 3 0.43 (0.017) Rad. 1.39 (0.05
2n6782.pdf
2N6782 MECHANICAL DATA Dimensions in mm (inches) N CHANNEL 8.89 (0.35) 9.40 (0.37) 7.75 (0.305) POWER MOSFET 8.51 (0.335) 4.19 (0.165) 4.95 (0.195) 0.89 max. (0.035) 12.70 (0.500) APPLICATIONS 7.75 (0.305) min. 8.51 (0.335) dia. FAST SWITCHING MOTOR CONTROLS 5.08 (0.200) typ. POWER SUPPLIES 2.54 2 (0.100) 1 3 0.66 (0.026) 1.14 (0.045) 0.71 (0.028)
2n6796.pdf
2N6796 MECHANICAL DATA Dimensions in mm (inches) TMOS FET TRANSISTOR N CHANNEL FEATURES VDSS = 100V ID = 8A ! RDSON = 0.18
2n6788l.pdf
2N6788L Dimensions in mm (inches). N-Channel MOSFET 8.64 (0.34) 9.40 (0.37) 8.01 (0.315) in a 9.01 (0.355) Hermetically sealed TO39 4.06 (0.16) 4.57 (0.18) Metal Package. 0.89 max. (0.035) 12.70 (0.500) min. 0.41 (0.016) 0.53 (0.021) dia. N-Channel MOSFET. 5.08 (0.200) typ. VDSS = 100V 2.54 ID = 4.5A 2 (0.100) 1 3 0.74 (0.029) RDS(ON) = 0.3
2n6753.pdf
2N6753 Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99) 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) Metal Package. 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 Bipolar NPN Device. 3 VCEO = 500V (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) IC = 10A 12.70 (0.50) All Semelab hermetically sealed products can be processed in
2n6788lcc4.pdf
2N6788LCC4 IRFE120 MECHANICAL DATA Dimensions in mm (inches) N CHANNEL POWER MOSFET ENHANCEMENT MODE 9.14 (0.360) 1.27 (0.050) 8.64 (0.340) 1.07 (0.040) 2.16 (0.085) 12 13 14 15 16 FEATURES 1.39 (0.055) 1.02 (0.040) 11 17 AVALANCHE ENERGY RATING 10 18 7.62 (0.300) 7.12 (0.280) 9 1 SIMPLE DRIVE REQUIREMENTS 0.76 (0.030) 8 2 0.51 (0.020) HERMETICALLY SE
2n6751.pdf
2N6751 Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99) 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) Metal Package. 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 Bipolar NPN Device. 3 VCEO = 400V (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) IC = 10A 12.70 (0.50) All Semelab hermetically sealed products can be processed in
2n6798.pdf
2N6798 MECHANICAL DATA Dimensions in mm (inches) N-CHANNEL ENHANCEMENT MODE TRANSISTOR FEATURES V(BR)DSS = 200V ID = 5.5A ! RDSON = 0.40
2n6786.pdf
2N6786 Dimensions in mm (inches). N-Channel MOSFET 8.64 (0.34) 9.40 (0.37) 8.01 (0.315) in a 9.01 (0.355) Hermetically sealed TO39 4.06 (0.16) 4.57 (0.18) Metal Package. 0.89 max. (0.035) 12.70 (0.500) min. 0.41 (0.016) 0.53 (0.021) dia. N-Channel MOSFET. 5.08 (0.200) typ. VDSS = 400V 2.54 ID = 1.25A 2 (0.100) 1 3 0.74 (0.029) RDS(ON) = 3.6
2n6754.pdf
2N6754 Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99) 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) Metal Package. 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 Bipolar NPN Device. 3 VCEO = 500V (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) IC = 10A 12.70 (0.50) All Semelab hermetically sealed products can be processed in
2n6794.pdf
2N6794 SEME LAB MECHANICAL DATA Dimensions in mm (inches) N CHANNEL POWER MOSFET BVDSS 500V ID(cont) 1.5 RDS(on) 3.0 FEATURES ! AVALANCHE ENERGY RATED
2n6727.pdf
2N6727 -1.5 A, -50V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES TO-92 General Purpose Switching Application G H Emitter Base Collector J A D Millimeter REF. B Min. Max. Collector A 4.40 4.70 B 4.30 4.70 K C 12.70 - D 3.30 3.81 E 0.36 0.56
2n6714 2n6715 2n6716.pdf
IS/ISO 9002 IS / IECQC 700000 Lic# QSC/L- 000019.2 IS / IECQC 750100 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer 2N6714 TO-237 Plastic Package 2N6715 2N6716 Boca Semiconductor Corp. BSC http //www.bocasemi.com NPN SILICON PLANAR EPITAXIAL TRANSISTORS Designed for General purpose Medium Power Amplifier and Switching Circuits. 1 = EMITTER 2 = BA
2n6738 2n6739 2n6740.pdf
A Boca Semiconductor Corp BSC http //www.bocasemi.com A Boca Semiconductor Corp BSC http //www.bocasemi.com A Boca Semiconductor Corp BSC http //www.bocasemi.com
2n6707.pdf
Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTOR 2N6707 TO-237 Plastic Package General Purpose Medium Power Amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25 C) DESCRIPTION SYMBOL VALUE UNIT Collector Base Voltage VCBO 100 V Collector Emitter Voltage VCEO 80 V Emitter Base Voltage VEBO 5V Collector Current Continuous IC 1.
2n6740.pdf
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company TO-220 Plastic Package 2N6740 2N6740 NPN PLASTIC POWER TRANSISTOR High Voltage and Power Supplies Switching Applications PIN CONFIGURATION 4 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR 1 2 3 C DIM MIN. MAX. B E F A 14.42 16.51 B 9.63 10.67 C 3.56 4.83 D0.90 E 1.15 1.40 1 2 3 F 3.75
2n6705.pdf
Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTOR 2N6705 TO-237 Plastic Package General Purpose Medium Power Amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25 C) DESCRIPTION SYMBOL VALUE UNIT Collector -Base Voltage VCBO 60 V Collector -Emitter Voltage VCEO 45 V Emitter Base Voltage VEBO 5V Collector Current Continuous IC 1
2n6718.pdf
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TRANSISTOR (NPN) 1. EMITTER General Purpose Switching Application 2. BASE 3. COLLECTOR Equivalent Circuit 1
2n6796u.pdf
TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland 1-800-446-1158 / (978) 620-2600 / Fax (978) 689-0803 Tel +353 (0) 65 6840044 Fax +353 (0) 65 6822298 Website http //www.microsemi.com N-CHANNEL MOSFET Qualified per MIL-PRF-19500/557 DEVICES LEVELS 2N6796 2N6796U JAN JANTX JANTXV ABSOLUTE MAXIMUM RATINGS (TC = +25 C un
2n6784u.pdf
TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland 1-800-446-1158 / (978) 620-2600 / Fax (978) 689-0803 Tel +353 (0) 65 6840044 Fax +353 (0) 65 6822298 Website http //www.microsemi.com N-CHANNEL MOSFET Qualified per MIL-PRF-19500/556 DEVICES LEVELS 2N6784 2N6784U JAN JANTX JANTXV ABSOLUTE MAXIMUM RATINGS (TC = +25 C u
2n6782u.pdf
TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax (978) 689-0803 Website http //www.microsemi.com N-CHANNEL MOSFET Qualified per MIL-PRF-19500/556 DEVICES LEVELS JAN 2N6782 2N6782U JANTX JANTXV ABSOLUTE MAXIMUM RATINGS (TC = +25 C unless otherwise noted) Parameters / Test Conditions Symbol Value Unit Drain Source Voltag
2n6798u.pdf
TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax (978) 689-0803 Website http //www.microsemi.com N-CHANNEL MOSFET Qualified per MIL-PRF-19500/557 DEVICES LEVELS JAN 2N6798 2N6798U JANTX JANTXV ABSOLUTE MAXIMUM RATINGS (TC = +25 C unless otherwise noted) Parameters / Test Conditions Symbol Value Unit Drain Source Voltag
2n6788u.pdf
TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax (978) 689-0803 Website http //www.microsemi.com N-CHANNEL MOSFET Qualified per MIL-PRF-19500/555 DEVICES LEVELS 2N6788 2N6788U JAN JANTX JANTXV ABSOLUTE MAXIMUM RATINGS (TC = +25 C unless otherwise noted) Parameters / Test Conditions Symbol Value Unit Drain Source Voltage VDS
h2n6718t.pdf
Spec. No. HT200701 HI-SINCERITY Issued Date 2007.08.01 Revised Date 2007.08.09 MICROELECTRONICS CORP. Page No. 1/5 H2N6718T NPN Epitaxial Planar Transistor Description TO-126 The H2N6718T is designed for general purpose medium power amplifier and switching. Absolute Maximum Ratings Maximum Temperatures Storage Temperature ...................................
h2n6718l.pdf
Spec. No. HE6218 HI-SINCERITY Issued Date 1992.11.25 Revised Date 2004.05.03 MICROELECTRONICS CORP. Page No. 1/5 H2N6718L NPN EPITAXIAL PLANAR TRANSISTOR Description The H2N6718L is designed for general purpose medium power amplifier and switching applications. Features TO-92 High Power 850mW High Current 1A Absolute Maximum Ratings Maximum Temperatures St
h2n6718v.pdf
Spec. No. HE6616 HI-SINCERITY Issued Date 1993.09.24 Revised Date 2005.08.16 MICROELECTRONICS CORP. Page No. 1/5 H2N6718V NPN EPITAXIAL PLANAR TRANSISTOR Description The H2N6718V is designed for general purpose medium power amplifier and switching. TO-126ML Absolute Maximum Ratings Maximum Temperatures Storage Temperature ...............................................
2n6718 3da6718.pdf
2N6718 3DA6718 NPN /SILICON NPN TRANSISTOR Purpose Designed for general purpose medium power amplifier and switching. Features High V , large current. CEO /Absolute Maximum Ratings(Ta=25 ) Symbol Rating Unit V 100 V CBO
2n6717.pdf
NPN SILICON PLANAR 2N6716 2N6717 MEDIUM POWER TRANSISTORS 2N6718 ISSUE 1 MARCH 94 T V I V i I E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. T 8 IT II V I V 8 V II i V I V 8 V i V I V V I I i II I Di i i T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25 C unless otherwise stated). T 8 IT DITI I I I II V 8 V I I V I II i V 8 V I I
2n6724.pdf
NPN SILICON PLANAR MEDIUM POWER 2N6724 DARLINGTON TRANSISTORS 2N6725 ISSUE 1 MARCH 94 T V I V i I E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. T IT II V I V V II i V I V V i V I V V I I i II I Di i i T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25 C unless otherwise stated). T IT DITI I I II V V I I V I II i V V I I V I
2n6771 2n6772 2n6773.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors 2N6771/6772/6773 DESCRIPTION Collector-Emitter Sustaining Voltage- VCEO(SUS) = 300V(Min)- 2N6771 = 350V(Min)- 2N6772 = 400V(Min)- 2N6773 High Switching Speed Low Saturation Voltage APPLICATIONS Designed for use in off-line power supplies and is also well suited for use in a wide
2n6738.pdf
isc Silicon NPN Power Transistor 2N6738 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 300V(Min) CEO(SUS) High Switching Speed Low Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in high-voltage, high-speed , power switc- hing in inductive circuit , they are particularly suited for
2n6740.pdf
isc Silicon NPN Power Transistor 2N6740 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 400V(Min) CEO(SUS) High Switching Speed Low Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in high-voltage, high-speed , power switc- hing in inductive circuit , they are particularly suited for
2n6738 2n6739 2n6740.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6738 2N6739 2N6740 DESCRIPTION With TO-220 package High voltage ratings Low collector saturation voltage Fast switching speed APPLICATIONS Suited for 115 and 220V switchmode applications such as switching regulators, Inverters and DC-DC converters PINNING PIN DESCRIPTION 1 Base Co
2n6773.pdf
isc Silicon NPN Power Transistors 2N6773 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 400V(Min) CEO(SUS) High Switching Speed Low Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in off-line power supplies and is also well suited for use in a wide range of inverter or converter cir
2n6702.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6702 DESCRIPTION With TO-220 package Fast switching speed Low collector saturation voltage APPLICATIONS Designed for converters,inverters, pulse-width-modulated regulators and a variety of power switching circuits. PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting b
2n6703.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2N6703 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 110V(Min) CEO(SUS) High Switching Speed Low Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for converters, inverters, pulse-width-modulated regulators and a variety of power switc
2n6772.pdf
isc Silicon NPN Power Transistors 2N6772 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 350V(Min) CEO(SUS) High Switching Speed Low Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in off-line power supplies and is also well suited for use in a wide range of inverter or converter cir
2n6739.pdf
isc Silicon NPN Power Transistor 2N6739 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 350V(Min) CEO(SUS) High Switching Speed Low Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in high-voltage, high-speed , power switc- hing in inductive circuit , they are particularly suited for
2n6771.pdf
isc Silicon NPN Power Transistors 2N6771 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 300V(Min) CEO(SUS) High Switching Speed Low Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in off-line power supplies and is also well suited for use in a wide range of inverter or converter cir
2n6753 2n6754.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6753 2N6754 DESCRIPTION With TO-3 package High breakdown voltage Low saturation voltage Fast switching speed APPLICATIONS Off-line power supplies High-voltage inverters Switching regulators PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3
2n6751 2n6752.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6751 2N6752 DESCRIPTION With TO-3 package High breakdown voltage Low saturation voltage Fast switching speed APPLICATIONS Off-line power supplies High-voltage inverters Switching regulators PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3
2n6704.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2N6704 DESCRIPTION Collector-Emitter Sustaining Voltage- VCEO(SUS) = 130V(Min) High Switching Speed Low Saturation Voltage APPLICATIONS Designed for converters, inverters, pulse-width-modulated regulators and a variety of power switching circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25 )
Otros transistores... 2N6687 , 2N6688 , 2N6689 , 2N669 , 2N6690 , 2N6691 , 2N6692 , 2N6693 , 2SC2625 , 2N670 , 2N6701 , 2N6702 , 2N6703 , 2N6704 , 2N6705 , 2N6706 , 2N6707 .
History: 2N6457
History: 2N6457
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