BC559CBK . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

BC556xBK ... BC559xBKBC556xBK ... BC559xBKGeneral Purpose Si-Epitaxial PlanarTransistorsPNP PNPSi-Epitaxial Planar-Transistoren fr universellen EinsatzVersion 2009-12-070.1Power dissipation Verlustleistung 500 mW4.6Plastic case TO-92Kunststoffgehuse (10D3)Weight approx. Gewicht ca. 0.18 gC B EPlastic material has UL classification 94V-0Gehusematerial

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby BC559/DLow Noise TransistorsPNP SiliconBC559, B, CBC560CCOLLECTOR12BASE3EMITTER1MAXIMUM RATINGS23Rating Symbol BC559 BC560 UnitCASE 2904, STYLE 17CollectorEmitter Voltage VCEO 30 45 VdcTO92 (TO226AA)CollectorBase Voltage VCBO 30 50 VdcEmitterBase Voltage VEBO

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D186BC559PNP general purpose transistor1999 May 28Product specificationSupersedes data of 1997 Jun 03Philips Semiconductors Product specificationPNP general purpose transistor BC559FEATURES PINNING Low current (max. 100 mA)PIN DESCRIPTION Low voltage (max. 30 V).1 emitter2 baseAPPLICATIONS3 collector

BC556/557/558/559/560Switching and Amplifier High Voltage: BC556, VCEO= -65V Low Noise: BC559, BC560 Complement to BC546 ... BC 550TO-9211. Collector 2. Base 3. EmitterPNP Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Value UnitsVCBO Collector-Base Voltage : BC556 -80 V: BC557/560 -50 V: BC558/559 -30 V

BC559Low Noise TransistorsPNP SiliconMAXIMUM RATINGSRating Symbol BC559 BC560 Unithttp://onsemi.comCollector-Emitter Voltage VCEO -30 -45 VdcCollector-Base Voltage VCBO -30 -50 VdcEmitter-Base Voltage VEBO -5.0 VdcCollector Current Continuous IC -100 mAdcTotal Device Dissipation @ PD mW1TA = 25C 62523Derate above 25C 5.0 mW/CTotal Device Dissipation @ P

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyPNP SILICON PLANAR EPITAXIAL TRANSISTORS BC559, B, CBC560, B, CTO-92Plastic PackageLow Noise TransistorsABSOLUTE MAXIMUM RATINGS(Ta=25C unless specified otherwise)DESCRIPTION SYMBOL BC559 BC560 UNITSVCEOCollector Emitter Voltage 30 45 VVCBOCollector Base Voltage 30 50 VVEBOEmit

SEMICONDUCTOR BC559/560TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORLOW NOISE APPLICATION. B CFEATUREFor Complementary with NPN Type BC549/550.N DIM MILLIMETERSA 4.70 MAXEKG B 4.80 MAXMAXIMUM RATING (Ta=25 )C 3.70 MAXDD 0.45CHARACTERISTIC SYMBOL RATING UNITE 1.00F 1.27BC559 -30G 0.85VCBOCollector-Base Voltage VH 0.45BC560 -50 _H J 14.00 + 0.50K