2N6707 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2N6707
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 2 W
Tensión colector-base (Vcb): 100 V
Tensión colector-emisor (Vce): 80 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 2 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 50 MHz
Ganancia de corriente contínua (hfe): 40
Paquete / Cubierta: TO92
Búsqueda de reemplazo de transistor bipolar 2N6707
2N6707 Datasheet (PDF)
2n6707.pdf
Continental Device India LimitedAn ISO/TS16949 and ISO 9001 Certified CompanyNPN SILICON PLANAR EPITAXIAL TRANSISTOR 2N6707TO-237Plastic PackageGeneral Purpose Medium Power AmplifierABSOLUTE MAXIMUM RATINGS(Ta=25C)DESCRIPTION SYMBOL VALUE UNITCollector Base Voltage VCBO 100 VCollector Emitter Voltage VCEO 80 VEmitter Base Voltage VEBO 5VCollector Current Continuous IC 1.
2n6705.pdf
Continental Device India LimitedAn ISO/TS16949 and ISO 9001 Certified CompanyNPN SILICON PLANAR EPITAXIAL TRANSISTOR 2N6705TO-237Plastic PackageGeneral Purpose Medium Power AmplifierABSOLUTE MAXIMUM RATINGS(Ta=25C)DESCRIPTION SYMBOL VALUE UNITCollector -Base Voltage VCBO 60 VCollector -Emitter Voltage VCEO 45 VEmitter Base Voltage VEBO 5VCollector Current Continuous IC 1
2n6702.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6702 DESCRIPTION With TO-220 package Fast switching speed Low collector saturation voltage APPLICATIONS Designed for converters,inverters, pulse-width-modulated regulators and a variety of power switching circuits. PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting b
2n6703.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2N6703DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 110V(Min)CEO(SUS)High Switching SpeedLow Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for converters, inverters, pulse-width-modulatedregulators and a variety of power switc
2n6704.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2N6704 DESCRIPTION Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 130V(Min) High Switching Speed Low Saturation Voltage APPLICATIONS Designed for converters, inverters, pulse-width-modulated regulators and a variety of power switching circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25)
Otros transistores... 2N67 , 2N670 , 2N6701 , 2N6702 , 2N6703 , 2N6704 , 2N6705 , 2N6706 , 2SC2655 , 2N6708 , 2N6709 , 2N671 , 2N6710 , 2N6711 , 2N6712 , 2N6713 , 2N6714 .
