2SA950-O Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SA950-O
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.6 W
Tensión colector-base (Vcb): 35 V
Tensión colector-emisor (Vce): 30 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 0.8 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 120 MHz
Capacitancia de salida (Cc): 19 pF
Ganancia de corriente contínua (hFE): 100
Encapsulados: TO92
Búsqueda de reemplazo de 2SA950-O
- Selecciónⓘ de transistores por parámetros
2SA950-O datasheet
2sa950-o-y.pdf
MCC TM Micro Commercial Components 2SA950-O 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 2SA950-Y Phone (818) 701-4933 Fax (818) 701-4939 Features Complementary Pair With 2SC2120 Epoxy meets UL 94 V-0 flammability rating PNP Silicon Moisure Sensitivity Level 1 Lead Free Finish/RoHS Compliant ("P" Suffix designates Transistors RoHS Compliant.
2sa950.pdf
2SA950 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA950 Audio Power Amplifier Applications Unit mm High hFE h = 100 320 FE 1 W output applications Complementary to 2SC2120 Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO -35 V Collector-emitter voltage VCEO -30 V Emitter-base voltage VEBO
2sa950.pdf
2SA950 -0.8A , -35V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES 1W output applications G H Complementary to 2SC2120 Emitter Collector Base J CLASSIFICATION OF hFE (1) A D Millimeter REF. Min. Max. Product-Rank 2SA950-O 2SA950-Y A 4.40 4.70
2sa950.pdf
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SA950 TRANSISTOR (PNP) TO-92 FEATURES 1W Output Applications 1.EMITTER Complementary to 2SC2120 2. COLLECTOR 3. BASE Equivalent Circuit A950=Device code Solid dot=Green molding compound device, if none,the normal device XXX=Code
Otros transistores... 2SA733P, 2SA733Q, 2SA733R, 2SA830S, 2SA933AS, 2SA933ASQ, 2SA933ASR, 2SA933ASS, D209L, 2SA950-Y, 2SAR293PFRA, 2SAR502EB, 2SAR502UB, 2SAR512PFRA, 2SAR512R, 2SAR513PFRA, 2SAR513R
History: BSX67 | INA6001AP1 | 103NU71
🌐 : EN ES РУ
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550
Popular searches
2sd313 | 2sc536 | d718 transistor | irfp250n datasheet | 2n5550 | 2sd1047 | 2n3035 | ksc1815





