2SB1188GP . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

CHENMKO ENTERPRISE CO.,LTD2SB1188GPSURFACE MOUNT PNP Medium Power TransistorVOLTAGE 32 Volts CURRENT 2 AmpereAPPLICATION* Power driver and Dc to DC convertor .FEATURESC-62/SOT-89* Small flat package. (SC-62/SOT-89)* Low saturation voltage VCE(sat)=-0.5V(typ.)(IC/IB=-2A/-0.2A) CONSTRUCTION 4.6MAX. 1.6MAX.1.7MAX. 0.4+0.05* PNP Switching TransistorMARKING* HFE(P):NO +

Medium power transistor (32V, 2A) 2SB1188 / 2SB1182 / 2SB1240 Features Dimensions (Unit : mm) 1) Low VCE(sat). 2SB1188 2SB1182VCE(sat) = 0.5V (Typ.) (IC/IB = 2A / 0.2A) 2.3+0.26.50.2-0.14.5+0.2-0.1 C0.52) Complements the 2SD1766 / 2SD1758 / 2SD1862. +0.2 5.1+0.21.5-0.1 -0.1 0.50.11.60.10.650.10.75(1) (2) (3)+0.1Structure 0.4-

TransistorsMedium power Transistor(*32V,*2A)2SB1188 / 2SB1182 / 2SB1240 /2SB822 / 2SB1277 / 2SB911MFFeatures FExternal dimensions (Unit: mm)1) Low VCE(sat).VCE(sat) = *0.5V (Typ.)(IC / IB = *2A / *0.2A)2) Complements the 2SD1766 /2SD1758 / 2SD1862 / 2SD1189F /2SD1055 / 2SD1919 / SD1227M.FStructureEpitaxial planar typePNP silicon transistor(96-131-B24)2152SB1188

UNISONIC TECHNOLOGIES CO., LTD 2SB1188 PNP SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR DESCRIPTION The UTC 2SB1188 is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator. 1 FEATURES SOT-89*High current output up to 3A *Low saturation voltage ORDERING INFORMATION Pin Assignment Orderi

2SB1188 -2A, -40V PNP Silicon Medium Power Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-89 DESCRIPTION The 2SB1188 is designed for medium poweramplifier applications. 4123AFEATURES EC Low collector saturation voltage : VCE(sat)=-0.5V(Typ.) RoHS Compliant Product B DF GCLASSIFICATION

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors 2SB1188 TRANSISTOR (PNP) SOT-89-3L 1. BASE FEATURES Low VCE(sat). 2. COLLECTOR 1 Complements the 2SD1766 2 3. EMITTER 3 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO -40 VCollector-Base Voltage VCEO -32 VCollector-Emitter Voltage V

2SB1 1 8 8 TRANSISTOR(PNP) SOT-89 1. BASE FEATURES 1 Low VCE(sat). 2. COLLECTOR Complements the 2SD1766 2 3. EMITTER 3 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO -40 VCollector-Base Voltage VCEO -32 VCollector-Emitter Voltage VEBO -5 VEmitter-Base Voltage Collector Current -Continuous IC -2 ACollector Power Dissip

2SB1188 SOT-89 Transistor(PNP)1. BASE SOT-892. COLLECTOR 1 4.6B4.41.62 1.83. EMITTER 1.41.43 2.64.252.43.75Features 0.8MIN0.53 Low VCE(sat).0.400.480.442x)0.13 B0.35 0.37 Complements the 2SD1766 1.53.0Dimensions in inches and (millimeters)MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCB

2SB1188KPNP Silicon Medium Power TransistorsSOT-89P b Lead(Pb)-Free121. BASE32. COLLECTOR3. EMITTERABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise specified)Unit Parameter Symbol Ratings Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -32 V Emitter-Base Voltage VEBO -5 V Collector Current -Continuous IC -2 A Collector Power Dissipation PD

2SB1188Epitaxial Planar PNP TransistorsSOT-89121. BASE32. COLLECTOR3. EMITTER%CABSOLUTE MAXIMUM RATINGS (Ta=25 )Rating SymbolLimits UnitCollector-Base VoltageVdcVCBO -40Collector-Emitter VoltageVdcVCEO -32Emitter-Base VoltageVdcVEBO -5ICA(DC)-2Collector CurrentICP-3 A (Pulse)*PC WCollector Power Dissipation 0.5%T ,Tstg CJunctio

2SB1188SOT-89 Plastic-Encapsulate Transistors TRANSISTOR (PNP) FEATURES Low VCE(sat).VCE(sat) = -0.5V (Typ.)(IC/IB = -2A / -0.2A) SOT-89 Complements the 2SD1766 Weight: 0.05 gRoHS product for packing code suffix "G" 1. BASE Halogen free product for packing code suffix "H"MAXIMUM RATINGS (TA=25 unless otherwise noted) 1 2. COLLECTOR Symbol Parameter Value U

ST 2SB1188U PNP Silicon Epitaxial Planar Transistor Medium power transistor Absolute Maximum Ratings (Ta = 25) Parameter Symbol Value UnitCollector Base Voltage -VCBO 40 VCollector Emitter Voltage -VCEO 32 VEmitter Base Voltage -VEBO 5 VCollector Current - DC -IC 2 A Collector Current - Pulse 1) -ICP 3 1) A 0.5 PC W Collector Power Dissipation2 2) Junction Temper

SMD Type TransistorsSMD TypePNP Transistor2SB11881.70 0.1FeaturesLow VCE(sat).VCE(sat) = -0.5V (Typ.)(IC/IB = -2A / -0.2A)0.42 0.10.46 0.11.Base2.Collector3.EmitterAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-base Voltage VCBO -40 VCollector-emitter Voltage VCEO -32 VEmitter-base Voltage VEBO -5 VIC -2 ACollector currentICP * -3

2SB1188SMD Ty p e PNP TransistorsFeaturesLow VCE(sat).VCE(sat) = -0.5V (Typ.)(IC/IB = -2A / -0.2A)321 1.Base2.Collector3.Emitter Simplified outline(SOT-89)Absolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-base Voltage VCBO -40 VCollector-emitter Voltage VCEO -32 VEmitter-base Voltage VEBO -5 VIC -2 ACollector currentICP * -3 AColl

2SB1188SQ PNP Transistor SOT-89Features Low collector saturation voltage Excellent h characteristicsFE 1. Base 2. Collector 3.EmitterMarking: 1188-P1188-Q 1188-RAbsolute Maximum Ratings (Ta = 25) Parameter Symbol Value UnitCollector Base Voltage -VCBO 40 VCollector Emitter Voltage -VCEO 32 VEmitter Base Voltage -VEBO 5 VCollector Current -IC 2 A Colle

2SB1188PNP-Silicon General use Transistors1W 1.5A25V ApplicationsCan be used for switching and amplifying in various 4 electrical and electronic circuit. 32 1 2 1 3Maximum ratings SOT-89 Parameters Symbol Rating Unit1 Base 2 Collector 3 EmitterV VCEO 25Collector-emitter voltage (IB=0) VCBO 40 VCollector-base voltageIE=0 VEBO 6 VEmitter-b