2SB1197-P . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

RoHS RoHSCOMPLIANT COMPLIANT2SB1197 PNP General Purpose Amplifier Features Epoxy meets UL-94 V-0 flammability rating Halogen free available upon request by adding suffix HF Moisture Sensitivity Level 1 Marking: 2SB1197-P AHP 2SB1197-Q AHQ 2SB1197-R AHR Maximum Ratings (Ta=25 unless otherwise noted) Item Symbol Unit Conditions Value

MCC2SB1197-PMicro Commercial ComponentsTM20736 Marilla Street ChatsworthMicro Commercial Components2SB1197-QCA 91311Phone: (818) 701-49332SB1197-RFax: (818) 701-4939Features Lead Free Finish/RoHS Compliant ("P" Suffix designates PNP SiliconRoHS Compliant. See ordering information)Epitaxial Transistors Small Package Mounting:any position Epoxy me

2SB1197KDatasheetLow Frequency Transistor (-32V, -0.8A)lOutlinel SOT-346 Parameter Value SC-59 VCEO-32VIC-800mASMT3lFeatures lInner circuitl l1) Low VCE(sat). VCE(sat)-500mV( IC= -500mA / IB= -50mA)2) IC= -0.8A.3) Complements the 2SD1781K.lApplicationlLOW FREQUENCY POWER AMPLIFIERlPackaging specif

2SB1197 -0.8 A, -40 V PNP Epitaxial Planar Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead free FEATURES SOT-23 Low VCE(sat).VCE(sat)-0.5V(IC / IB = -0.5A /-50mA) A IC =-0.8A L3 Complements of the 2SD1781 3Top ViewC B11 2CLASSIFICATION OF hFE 2K EProduct-Rank 2SB1197-P 2SB1197-Q 2SB1197-R

2SB1197K -0.8 A, -40 V PNP Epitaxial Planar Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead free FEATURES SC-59 Low VCE(sat).VCE(sat)-0.5V(IC / IB = -0.5A /-50mA) A IC =-0.8A L3 3Top ViewC BMECHANICAL DATA 1 Case: SC-59, 1 22K E Weight: 0.008 grams(approx.) DCLASSIFICATION OF hFE H J

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors 2SB1197 TRANSISTOR (PNP)SOT-23 FEATURES Unit : mm 1. BASE Low VCE(sat).VCE(sat)

2SB1 1 97 TRANSISTOR(PNP)SOT-23 1. BASE Unit : mm FEATURES 2. EMITTER 3. COLLECTOR Low VCE(sat).VCE(sat)

2SB1197 SOT-23 Transistor(PNP)SOT-231. BASE 2. EMITTER 3. COLLECTOR Features Low VCE(sat).VCE(sat)

2SB1197K SOT-23-3L Transistor(PNP)SOT-23-3L1. BASE 2. EMITTER 2.920.353. COLLECTOR 1.17Features2.80 1.60 Power amplifier 0.151.90MAXIMUM RATINGS* TA=25 unless otherwise noted Dimensions in inches and (millimeters)Symbol Parameter Value UnitsVCBO Collector- Base Voltage -40 VCEO Collector-Emitter Voltage -32 V VEBO Emitter-Base Voltage -5 V IC Collec

2SB1197PNP General Purpose Transistors3Pb Lead(Pb)-Free12Features:SOT-23* High current capacity in compact package.* Epitaxial planar type.* We declare that the material of product compliance with RoHS requirements.MAXIMUM RATINGS(Ta=25C)Rating Symbol Value UnitVCBOCollector-Base Voltage -40 VCollector-Emitter VoltageVCEO-32 VVEBOEmitter-Base Voltage -5.0

FM120-M WILLAS2SB1197KxLT1THRULow Frequency TransistorFM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProductPackage outlineFeatures Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.SOD-123H Low profile surface mounted application in order toPNP Silicon

LESHAN RADIO COMPANY, LTD.Low Frequency TransistorL2SB1197KQLT1G SeriesS-L2SB1197KQLT1G SeriesPNP SiliconFEATURE High current capacity in compact package.3IC = -0.8A. Epitaxial planar type. NPN complement: L2SD1781K1 We declare that the material of product compliance with RoHS requirements.2 S- Prefix for Automotive and Other Applications Requiring Unique Site

LESHAN RADIO COMPANY, LTD.Low Frequency TransistorL2SB1197KQLT1G SeriesS-L2SB1197KQLT1G SeriesPNP SiliconFEATURE High current capacity in compact package.3IC = -0.8A. Epitaxial planar type.1 NPN complement: L2SD1781K We declare that the material of product compliance with RoHS requirements.2 S- Prefix for Automotive and Other Applications Requiring Unique Site

SMD Type TransistorsSMD TypePNP Transistors2SB1197 (2SB1197K)SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13FeaturesLow VCE(sat).VCE(sat) -0.5V IC / IB= -0.5A / -50mA .IC = -0.8A.12PNP silicon transistor+0.1+0.050.95 -0.1 0.1-0.01+0.11.9 -0.11.Base2.Emitter3.collectorAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-base Voltage VCB

CHENMKO ENTERPRISE CO.,LTD2SB1197KGPSURFACE MOUNT PNP Switching Transistor VOLTAGE 32 Volts CURRENT 0.8 AmpereAPPLICATION* Telephone and proferssional communction equipment.* Other switching applications.FEATURESOT-23* Small surface mounting type. (SOT-23)* Corrector peak current (Max.=1000mA). * Suitable for high packing density.* Low voltage (Max.=40V) .* High satu

2SB1197KPlastic-Encapsulate TransistorsSOT-23 (PNP) FEATURES Very low VCE(sat). VCE(sat)