2SB1197-P Todos los transistores

RoHS RoHS COMPLIANT COMPLIANT 2SB1197 PNP General Purpose Amplifier Features Epoxy meets UL-94 V-0 flammability rating Halogen free available upon request by adding suffix HF Moisture Sensitivity Level 1 Marking 2SB1197-P AHP 2SB1197-Q AHQ 2SB1197-R AHR Maximum Ratings (Ta=25 unless otherwise noted) Item Symbol Unit Conditions Value

MCC 2SB1197-P Micro Commercial Components TM 20736 Marilla Street Chatsworth Micro Commercial Components 2SB1197-Q CA 91311 Phone (818) 701-4933 2SB1197-R Fax (818) 701-4939 Features Lead Free Finish/RoHS Compliant ("P" Suffix designates PNP Silicon RoHS Compliant. See ordering information) Epitaxial Transistors Small Package Mounting any position Epoxy me

2SB1197K Datasheet Low Frequency Transistor (-32V, -0.8A) lOutline l SOT-346 Parameter Value SC-59 VCEO -32V IC -800mA SMT3 lFeatures lInner circuit l l 1) Low VCE(sat). VCE(sat) -500mV ( IC= -500mA / IB= -50mA) 2) IC= -0.8A. 3) Complements the 2SD1781K. lApplication l LOW FREQUENCY POWER AMPLIFIER lPackaging specif

2SB1197 -0.8 A, -40 V PNP Epitaxial Planar Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead free FEATURES SOT-23 Low VCE(sat).VCE(sat) -0.5V(IC / IB = -0.5A /-50mA) A IC =-0.8A L 3 Complements of the 2SD1781 3 Top View C B 1 1 2 CLASSIFICATION OF hFE 2 K E Product-Rank 2SB1197-P 2SB1197-Q 2SB1197-R

2SB1197K -0.8 A, -40 V PNP Epitaxial Planar Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead free FEATURES SC-59 Low VCE(sat).VCE(sat) -0.5V(IC / IB = -0.5A /-50mA) A IC =-0.8A L 3 3 Top View C B MECHANICAL DATA 1 Case SC-59, 1 2 2 K E Weight 0.008 grams(approx.) D CLASSIFICATION OF hFE H J

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors 2SB1197 TRANSISTOR (PNP) SOT-23 FEATURES Unit mm 1. BASE Low VCE(sat).VCE(sat)

2SB1 1 97 TRANSISTOR(PNP) SOT-23 1. BASE Unit mm FEATURES 2. EMITTER 3. COLLECTOR Low VCE(sat).VCE(sat)

2SB1197 SOT-23 Transistor(PNP) SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features Low VCE(sat).VCE(sat)

2SB1197K SOT-23-3L Transistor(PNP) SOT-23-3L 1. BASE 2. EMITTER 2.92 0.35 3. COLLECTOR 1.17 Features 2.80 1.60 Power amplifier 0.15 1.90 MAXIMUM RATINGS* TA=25 unless otherwise noted Dimensions in inches and (millimeters) Symbol Parameter Value Units VCBO Collector- Base Voltage -40 VCEO Collector-Emitter Voltage -32 V VEBO Emitter-Base Voltage -5 V IC Collec

2SB1197 PNP General Purpose Transistors 3 Pb Lead(Pb)-Free 1 2 Features SOT-23 * High current capacity in compact package. * Epitaxial planar type. * We declare that the material of product compliance with RoHS requirements. MAXIMUM RATINGS(Ta=25 C) Rating Symbol Value Unit VCBO Collector-Base Voltage -40 V Collector-Emitter Voltage VCEO -32 V VEBO Emitter-Base Voltage -5.0

FM120-M WILLAS 2SB1197KxLT1 THRU Low Frequency Transistor FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Product Package outline Features Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H Low profile surface mounted application in order to PNP Silicon

LESHAN RADIO COMPANY, LTD. Low Frequency Transistor L2SB1197KQLT1G Series S-L2SB1197KQLT1G Series PNP Silicon FEATURE High current capacity in compact package. 3 IC = -0.8A. Epitaxial planar type. NPN complement L2SD1781K 1 We declare that the material of product compliance with RoHS requirements. 2 S- Prefix for Automotive and Other Applications Requiring Unique Site

LESHAN RADIO COMPANY, LTD. Low Frequency Transistor L2SB1197KQLT1G Series S-L2SB1197KQLT1G Series PNP Silicon FEATURE High current capacity in compact package. 3 IC = -0.8A. Epitaxial planar type. 1 NPN complement L2SD1781K We declare that the material of product compliance with RoHS requirements. 2 S- Prefix for Automotive and Other Applications Requiring Unique Site

SMD Type Transistors SMD Type PNP Transistors 2SB1197 (2SB1197K) SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 Features Low VCE(sat).VCE(sat) -0.5V IC / IB= -0.5A / -50mA . IC = -0.8A. 12 PNP silicon transistor +0.1 +0.05 0.95 -0.1 0.1-0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base Voltage VCB

CHENMKO ENTERPRISE CO.,LTD 2SB1197KGP SURFACE MOUNT PNP Switching Transistor VOLTAGE 32 Volts CURRENT 0.8 Ampere APPLICATION * Telephone and proferssional communction equipment. * Other switching applications. FEATURE SOT-23 * Small surface mounting type. (SOT-23) * Corrector peak current (Max.=1000mA). * Suitable for high packing density. * Low voltage (Max.=40V) . * High satu

2SB1197K Plastic-Encapsulate Transistors SOT-23 (PNP) FEATURES Very low VCE(sat). VCE(sat)