2SB1182Q Todos los transistores

Medium power transistor ( 32V, 2A) 2SB1188 / 2SB1182 / 2SB1240 Features Dimensions (Unit mm) 1) Low VCE(sat). 2SB1188 2SB1182 VCE(sat) = 0.5V (Typ.) (IC/IB = 2A / 0.2A) 2.3+0.2 6.5 0.2 -0.1 4.5+0.2 -0.1 C0.5 2) Complements the 2SD1766 / 2SD1758 / 2SD1862. +0.2 5.1+0.2 1.5-0.1 -0.1 0.5 0.1 1.6 0.1 0.65 0.1 0.75 (1) (2) (3) +0.1 Structure 0.4-

Transistors Medium power Transistor(*32V,*2A) 2SB1188 / 2SB1182 / 2SB1240 / 2SB822 / 2SB1277 / 2SB911M FFeatures FExternal dimensions (Unit mm) 1) Low VCE(sat). VCE(sat) = *0.5V (Typ.) (IC / IB = *2A / *0.2A) 2) Complements the 2SD1766 / 2SD1758 / 2SD1862 / 2SD1189F / 2SD1055 / 2SD1919 / SD1227M. FStructure Epitaxial planar type PNP silicon transistor (96-131-B24) 215 2SB1188

Medium power transistor ( 32V, 2A) 2SB1182 / 2SB1240 Features Dimensions (Unit mm) 1) Low VCE(sat). 2SB1182 2SB1240 VCE(sat) = 0.5V (Typ.) 2.5 0.2 6.8 0.2 (IC/IB = 2A / 0.2A) 2.3+0.2 6.5 0.2 -0.1 C0.5 2) Complements 2SD1758 / 2SD1862. 5.1+0.2 -0.1 0.5 0.1 0.65Max. 0.65 0.1 Structure 0.75 0.9 0.5 0.1 Epitaxial planar type 0.55 0.1 PN

UNISONIC TECHNOLOGIES CO., LTD 2SB1182 PNP SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR 1 TO-252 DESCRIPTION The UTC 2SB1182 is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator. FEATURES * High current output up to 3A * Low saturation voltage ORDERING INFORMATION Ordering Number Pin Assignm

2SB1182(PNP) TO-251/TO-252-2L Transistor TO-251 1.BASE 2.COLLECTOR 3EMITTER 1 2 3 Features Power dissipation MAXIMUM RATINGS (TA=25 unless otherwise noted) TO-252-2L Symbol Parameter Value Units VCBO Collector- Base Voltage -40 V VCEO Collector-Emitter Voltage -32 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -2 A PC Collector Power Dissipat

2SB1182 PNP PLASTIC ENCAPSULATE TRANSISTORS P b Lead(Pb)-Free 1.BASE 3 2.COLLECTOR 2 3.EMITTER 1 D-PAK(TO-252) ABSOLUTE MAXIMUM RATINGS (TA=25 C) Rating Symbol Limits Unit VCBO V Collector-Base Voltage -40 VCEO V Collector-Emitter Voltage -32 VEBO V Emitter-Base Voltage -5.0 Collector Current IC A -2.0 Collector Power Dissipation PD 1.5 W Junction Temperature Tj +150

2SB1182 Rev.E May.-2016 DATA SHEET / Descriptions TO-252 PNP Silicon PNP transistor in a TO-252 Plastic Package. / Features , 2SD1758 Low VCE(sat),complements the 2SD1758. / Applications Medium power amplifier applications. / Equivalent Circuit

SMD Type Transistors Medium Power Transistor 2SB1182 TO-252 Unit mm Features +0.15 +0.1 6.50-0.15 2.30-0.1 +0.2 +0.8 5.30-0.2 0.50-0.7 Low VCE(sat). Epitaxial planar type PNP silicon transistor 0.127 +0.1 max 0.80-0.1 +0.1 2.3 0.60-0.1 1 Base +0.15 4.60-0.15 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO

SMD Type Transistors PNP Transistors 2SB1182 TO-252 Unit mm +0.15 6.50-0.15 +0.1 Features 2.30 -0.1 +0.2 5.30-0.2 +0.8 0.50 -0.7 Low VCE(sat).VCE(sat) = -0.5V Complementary to 2SD1758 0.127 +0.1 0.80-0.1 max + 0.1 1 Base 2.3 0.60- 0.1 +0.15 4 .60 -0.15 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector

CHENMKO ENTERPRISE CO.,LTD 2SB1182GP SMALL FLAT PNP Epitaxial Transistor VOLTAGE 32 Volts CURRENT 2 Ampere APPLICATION * Power driver and Dc to DC convertor . FEATURE * Small flat package. (DPAK) DPAK * PC= 1.5 W (mounted on ceramic substrate). * High saturation current capability. .094 (2.38) CONSTRUCTION .086 (2.19) .022 (0.55) * PNP Switching Transistor .018 (0.45) (1) (3

INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1182 DESCRIPTION Small and slim package 100% tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power dissipation ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage -40 V CBO V Collector-Emitter Voltage -32 V CEO V Emitter-