2SB1182R . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Medium power transistor (32V, 2A) 2SB1188 / 2SB1182 / 2SB1240 Features Dimensions (Unit : mm) 1) Low VCE(sat). 2SB1188 2SB1182VCE(sat) = 0.5V (Typ.) (IC/IB = 2A / 0.2A) 2.3+0.26.50.2-0.14.5+0.2-0.1 C0.52) Complements the 2SD1766 / 2SD1758 / 2SD1862. +0.2 5.1+0.21.5-0.1 -0.1 0.50.11.60.10.650.10.75(1) (2) (3)+0.1Structure 0.4-

TransistorsMedium power Transistor(*32V,*2A)2SB1188 / 2SB1182 / 2SB1240 /2SB822 / 2SB1277 / 2SB911MFFeatures FExternal dimensions (Unit: mm)1) Low VCE(sat).VCE(sat) = *0.5V (Typ.)(IC / IB = *2A / *0.2A)2) Complements the 2SD1766 /2SD1758 / 2SD1862 / 2SD1189F /2SD1055 / 2SD1919 / SD1227M.FStructureEpitaxial planar typePNP silicon transistor(96-131-B24)2152SB1188

Medium power transistor (32V, 2A) 2SB1182 / 2SB1240 Features Dimensions (Unit : mm) 1) Low VCE(sat). 2SB1182 2SB1240VCE(sat) = 0.5V (Typ.) 2.50.26.80.2(IC/IB = 2A / 0.2A) 2.3+0.26.50.2-0.1C0.52) Complements 2SD1758 / 2SD1862. 5.1+0.2-0.1 0.50.10.65Max.0.650.1Structure 0.750.90.50.1Epitaxial planar type 0.550.1PN

UNISONIC TECHNOLOGIES CO., LTD 2SB1182 PNP SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR 1TO-252 DESCRIPTION The UTC 2SB1182 is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator. FEATURES * High current output up to 3A * Low saturation voltage ORDERING INFORMATION Ordering Number Pin Assignm

2SB1182(PNP)TO-251/TO-252-2L TransistorTO-2511.BASE 2.COLLECTOR 3EMITTER 1 2 3 Features Power dissipation MAXIMUM RATINGS (TA=25 unless otherwise noted) TO-252-2LSymbol Parameter Value UnitsVCBO Collector- Base Voltage -40 V VCEO Collector-Emitter Voltage -32 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -2 A PC Collector Power Dissipat

2SB1182PNP PLASTIC ENCAPSULATE TRANSISTORSP b Lead(Pb)-Free1.BASE32.COLLECTOR23.EMITTER 1D-PAK(TO-252)ABSOLUTE MAXIMUM RATINGS (TA=25C)Rating Symbol Limits UnitVCBO VCollector-Base Voltage-40VCEOVCollector-Emitter Voltage -32VEBOVEmitter-Base Voltage -5.0Collector CurrentIC A-2.0Collector Power Dissipation PD 1.5 WJunction TemperatureTj+150

2SB1182 Rev.E May.-2016 DATA SHEET / Descriptions TO-252 PNP Silicon PNP transistor in a TO-252 Plastic Package. / Features , 2SD1758 Low VCE(sat),complements the 2SD1758. / Applications Medium power amplifier applications. / Equivalent Circuit

SMD Type TransistorsMedium Power Transistor2SB1182TO-252Unit: mmFeatures+0.15 +0.16.50-0.15 2.30-0.1+0.2 +0.85.30-0.2 0.50-0.7Low VCE(sat).Epitaxial planar typePNP silicon transistor0.127+0.1 max0.80-0.1+0.12.3 0.60-0.11 Base+0.154.60-0.152 Collector3 EmitterAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-base voltage VCBO

SMD Type TransistorsPNP Transistors2SB1182TO-252Unit: mm+0.156.50-0.15+0.1 Features2.30 -0.1+0.25.30-0.2 +0.80.50 -0.7 Low VCE(sat).VCE(sat) = -0.5V Complementary to 2SD17580.127+0.10.80-0.1max+ 0.11 Base2.3 0.60- 0.1+0.154 .60 -0.152 Collector3 Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector

CHENMKO ENTERPRISE CO.,LTD2SB1182GPSMALL FLAT PNP Epitaxial Transistor VOLTAGE 32 Volts CURRENT 2 AmpereAPPLICATION* Power driver and Dc to DC convertor .FEATURE* Small flat package. (DPAK)DPAK* PC= 1.5 W (mounted on ceramic substrate).* High saturation current capability..094 (2.38)CONSTRUCTION.086 (2.19).022 (0.55)* PNP Switching Transistor.018 (0.45)(1) (3

INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SB1182DESCRIPTIONSmall and slim package100% testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower dissipationABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage -40 VCBOV Collector-Emitter Voltage -32 VCEOV Emitter-