2N6713 Todos los transistores

145 Adams Avenue, Hauppauge, NY 11788 USA Tel (631) 435-1110 Fax (631) 435-1824

145 Adams Avenue, Hauppauge, NY 11788 USA Tel (631) 435-1110 Fax (631) 435-1824

NPN SILICON PLANAR 2N6716 2N6717 MEDIUM POWER TRANSISTORS 2N6718 ISSUE 1 MARCH 94 T V I V i I E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. T 8 IT II V I V 8 V II i V I V 8 V i V I V V I I i II I Di i i T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25 C unless otherwise stated). T 8 IT DITI I I I II V 8 V I I V I II i V 8 V I I

NPN SILICON PLANAR 2N6714 MEDIUM POWER TRANSISTORS 2N6715 ISSUE 1 MARCH 94 T V I V i I E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. T IT II V I V V II i V I V V i V I V V I I i II I Di i i T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25 C unless otherwise stated). T IT DITI I I II V V I I V I II i V V I I V I i V V I I

UNISONIC TECHNOLOGIES CO., LTD 2N6718 NPN SILICON TRANSISTOR NPN GENERAL PLANAR TRANSISTOR DESCRIPTION The UTC 2N6718 is designed for general purpose medium power amplifier and switching applications. FEATURES * High Power 850mW * High Current 1A ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Plating Halogen Free 1 2 3 2N6

IS/ISO 9002 IS / IECQC 700000 Lic# QSC/L- 000019.2 IS / IECQC 750100 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer 2N6714 TO-237 Plastic Package 2N6715 2N6716 Boca Semiconductor Corp. BSC http //www.bocasemi.com NPN SILICON PLANAR EPITAXIAL TRANSISTORS Designed for General purpose Medium Power Amplifier and Switching Circuits. 1 = EMITTER 2 = BA

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TRANSISTOR (NPN) 1. EMITTER General Purpose Switching Application 2. BASE 3. COLLECTOR Equivalent Circuit 1

Spec. No. HT200701 HI-SINCERITY Issued Date 2007.08.01 Revised Date 2007.08.09 MICROELECTRONICS CORP. Page No. 1/5 H2N6718T NPN Epitaxial Planar Transistor Description TO-126 The H2N6718T is designed for general purpose medium power amplifier and switching. Absolute Maximum Ratings Maximum Temperatures Storage Temperature ...................................

Spec. No. HE6218 HI-SINCERITY Issued Date 1992.11.25 Revised Date 2004.05.03 MICROELECTRONICS CORP. Page No. 1/5 H2N6718L NPN EPITAXIAL PLANAR TRANSISTOR Description The H2N6718L is designed for general purpose medium power amplifier and switching applications. Features TO-92 High Power 850mW High Current 1A Absolute Maximum Ratings Maximum Temperatures St

Spec. No. HE6616 HI-SINCERITY Issued Date 1993.09.24 Revised Date 2005.08.16 MICROELECTRONICS CORP. Page No. 1/5 H2N6718V NPN EPITAXIAL PLANAR TRANSISTOR Description The H2N6718V is designed for general purpose medium power amplifier and switching. TO-126ML Absolute Maximum Ratings Maximum Temperatures Storage Temperature ...............................................

2N6718 3DA6718 NPN /SILICON NPN TRANSISTOR Purpose Designed for general purpose medium power amplifier and switching. Features High V , large current. CEO /Absolute Maximum Ratings(Ta=25 ) Symbol Rating Unit V 100 V CBO

NPN SILICON PLANAR 2N6716 2N6717 MEDIUM POWER TRANSISTORS 2N6718 ISSUE 1 MARCH 94 T V I V i I E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. T 8 IT II V I V 8 V II i V I V 8 V i V I V V I I i II I Di i i T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25 C unless otherwise stated). T 8 IT DITI I I I II V 8 V I I V I II i V 8 V I I