2N6716 Todos los transistores

 ..1. Size:50K  central
 2n6716 2n6717 2n6718 2n6728 2n6729 2n6730.pdf

145 Adams Avenue, Hauppauge, NY 11788 USA Tel (631) 435-1110 Fax (631) 435-1824

 ..2. Size:27K  diodes
 2n6716 2n6717 2n6718.pdf

NPN SILICON PLANAR 2N6716 2N6717 MEDIUM POWER TRANSISTORS 2N6718 ISSUE 1 MARCH 94 T V I V i I E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. T 8 IT II V I V 8 V II i V I V 8 V i V I V V I I i II I Di i i T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25 C unless otherwise stated). T 8 IT DITI I I I II V 8 V I I V I II i V 8 V I I

 ..3. Size:43K  bocasemi
 2n6714 2n6715 2n6716.pdf

IS/ISO 9002 IS / IECQC 700000 Lic# QSC/L- 000019.2 IS / IECQC 750100 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer 2N6714 TO-237 Plastic Package 2N6715 2N6716 Boca Semiconductor Corp. BSC http //www.bocasemi.com NPN SILICON PLANAR EPITAXIAL TRANSISTORS Designed for General purpose Medium Power Amplifier and Switching Circuits. 1 = EMITTER 2 = BA

 9.1. Size:63K  central
 2n6714 2n6715 2n6726 2n6727.pdf

145 Adams Avenue, Hauppauge, NY 11788 USA Tel (631) 435-1110 Fax (631) 435-1824

 9.2. Size:26K  diodes
 2n6714 2n6715.pdf

NPN SILICON PLANAR 2N6714 MEDIUM POWER TRANSISTORS 2N6715 ISSUE 1 MARCH 94 T V I V i I E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. T IT II V I V V II i V I V V i V I V V I I i II I Di i i T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25 C unless otherwise stated). T IT DITI I I II V V I I V I II i V V I I V I i V V I I

 9.3. Size:160K  utc
 2n6718.pdf

UNISONIC TECHNOLOGIES CO., LTD 2N6718 NPN SILICON TRANSISTOR NPN GENERAL PLANAR TRANSISTOR DESCRIPTION The UTC 2N6718 is designed for general purpose medium power amplifier and switching applications. FEATURES * High Power 850mW * High Current 1A ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Plating Halogen Free 1 2 3 2N6

 9.4. Size:506K  jiangsu
 2n6718.pdf

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TRANSISTOR (NPN) 1. EMITTER General Purpose Switching Application 2. BASE 3. COLLECTOR Equivalent Circuit 1

 9.5. Size:82K  hsmc
 h2n6718t.pdf

Spec. No. HT200701 HI-SINCERITY Issued Date 2007.08.01 Revised Date 2007.08.09 MICROELECTRONICS CORP. Page No. 1/5 H2N6718T NPN Epitaxial Planar Transistor Description TO-126 The H2N6718T is designed for general purpose medium power amplifier and switching. Absolute Maximum Ratings Maximum Temperatures Storage Temperature ...................................

 9.6. Size:51K  hsmc
 h2n6718l.pdf

Spec. No. HE6218 HI-SINCERITY Issued Date 1992.11.25 Revised Date 2004.05.03 MICROELECTRONICS CORP. Page No. 1/5 H2N6718L NPN EPITAXIAL PLANAR TRANSISTOR Description The H2N6718L is designed for general purpose medium power amplifier and switching applications. Features TO-92 High Power 850mW High Current 1A Absolute Maximum Ratings Maximum Temperatures St

 9.7. Size:44K  hsmc
 h2n6718v.pdf

Spec. No. HE6616 HI-SINCERITY Issued Date 1993.09.24 Revised Date 2005.08.16 MICROELECTRONICS CORP. Page No. 1/5 H2N6718V NPN EPITAXIAL PLANAR TRANSISTOR Description The H2N6718V is designed for general purpose medium power amplifier and switching. TO-126ML Absolute Maximum Ratings Maximum Temperatures Storage Temperature ...............................................

 9.8. Size:259K  lzg
 2n6718 3da6718.pdf

2N6718 3DA6718 NPN /SILICON NPN TRANSISTOR Purpose Designed for general purpose medium power amplifier and switching. Features High V , large current. CEO /Absolute Maximum Ratings(Ta=25 ) Symbol Rating Unit V 100 V CBO

 9.9. Size:28K  zetex
 2n6717.pdf

NPN SILICON PLANAR 2N6716 2N6717 MEDIUM POWER TRANSISTORS 2N6718 ISSUE 1 MARCH 94 T V I V i I E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. T 8 IT II V I V 8 V II i V I V 8 V i V I V V I I i II I Di i i T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25 C unless otherwise stated). T 8 IT DITI I I I II V 8 V I I V I II i V 8 V I I