2N6718 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2N6718
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 2 W
Tensión colector-base (Vcb): 100 V
Tensión colector-emisor (Vce): 100 V
Tensión emisor-base (Veb): 4 V
Corriente del colector DC máxima (Ic): 2 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 50 MHz
Ganancia de corriente contínua (hfe): 80
Paquete / Cubierta: TO92
Búsqueda de reemplazo de transistor bipolar 2N6718
2N6718 Datasheet (PDF)
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145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824
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NPN SILICON PLANAR 2N67162N6717MEDIUM POWER TRANSISTORS2N6718ISSUE 1 MARCH 94 T V I V i I E-LineTO92 CompatibleABSOLUTE MAXIMUM RATINGS. T 8 IT II V I V 8 V II i V I V 8 V i V I V V I I i II I Di i i T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). T 8 IT DITI I I I II V 8 V I I V I II i V 8 V I I
2n6718.pdf
UNISONIC TECHNOLOGIES CO., LTD 2N6718 NPN SILICON TRANSISTOR NPN GENERAL PLANAR TRANSISTOR DESCRIPTION The UTC 2N6718 is designed for general purpose medium power amplifier and switching applications. FEATURES * High Power: 850mW * High Current: 1A ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Plating Halogen Free 1 2 3 2N6
2n6718.pdf
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TRANSISTOR (NPN) 1. EMITTER General Purpose Switching Application2. BASE3. COLLECTOR Equivalent Circuit 1
2n6718 3da6718.pdf
2N67183DA6718 NPN /SILICON NPN TRANSISTOR : Purpose: Designed for general purpose medium power amplifier and switching. : Features: High V , large current. CEO /Absolute Maximum Ratings(Ta=25) Symbol Rating Unit V 100 V CBO
h2n6718t.pdf
Spec. No. : HT200701 HI-SINCERITY Issued Date : 2007.08.01 Revised Date : 2007.08.09 MICROELECTRONICS CORP. Page No. : 1/5 H2N6718T NPN Epitaxial Planar Transistor Description TO-126 The H2N6718T is designed for general purpose medium power amplifier and switching. Absolute Maximum Ratings Maximum Temperatures Storage Temperature ...................................
h2n6718l.pdf
Spec. No. : HE6218HI-SINCERITYIssued Date : 1992.11.25Revised Date : 2004.05.03MICROELECTRONICS CORP.Page No. : 1/5H2N6718LNPN EPITAXIAL PLANAR TRANSISTORDescriptionThe H2N6718L is designed for general purpose medium power amplifier andswitching applications.FeaturesTO-92 High Power: 850mW High Current: 1AAbsolute Maximum Ratings Maximum TemperaturesSt
h2n6718v.pdf
Spec. No. : HE6616HI-SINCERITYIssued Date : 1993.09.24Revised Date : 2005.08.16MICROELECTRONICS CORP.Page No. : 1/5H2N6718VNPN EPITAXIAL PLANAR TRANSISTORDescriptionThe H2N6718V is designed for general purpose medium power amplifier andswitching.TO-126MLAbsolute Maximum Ratings Maximum TemperaturesStorage Temperature ...............................................
Otros transistores... 2N6710 , 2N6711 , 2N6712 , 2N6713 , 2N6714 , 2N6715 , 2N6716 , 2N6717 , 2N4401 , 2N6719 , 2N672 , 2N6720 , 2N6721 , 2N6722 , 2N6723 , 2N6724 , 2N6725 .
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