ISA1287AS1 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: ISA1287AS1
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.6 W
Tensión colector-base (Vcb): 50 V
Tensión colector-emisor (Vce): 50 V
Tensión emisor-base (Veb): 6 V
Corriente del colector DC máxima (Ic): 1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 90 MHz
Capacitancia de salida (Cc): 30 pF
Ganancia de corriente contínua (hfe): 400
Paquete / Cubierta: SC72
Búsqueda de reemplazo de transistor bipolar ISA1287AS1
ISA1287AS1 Datasheet (PDF)
isa1287as1.pdf
SMALL-SIGNAL TRANSISTOR ISA1287AS1 FOR RELAY DRIVE, POWOR SUPPLY APPLICATIONSILICON PNP EPITAXIAL TYPEDESCRIPTION OUTLINE DRAWING Unit ISA1287AS1 is a silicon PNP epitaxial type transistor. 4.0 Designed with high voltage, high collector current, dissipation and high hFE. Complementary with ISC3247AS1. 0.1 FEATURE High hFE hFE=400 to 800 0.45
isa1284as1.pdf
SMALL-SIGNAL TRANSISTOR ISA1284AS1 FOR LOW FREQUENCY POWOR AMPLIFY APPLICATIONSILICON PNP EPITAXIAL TYPEDESCRIPTION OUTLINE DRAWING Unit ISA1284AS1 is a silicon PNP epitaxial type transistor 4.0 designed for high voltage application. Complementary with ISC3244AS1. FEATURE 0.1 High voltage VCEO=-100V High peak collector current. ICM=-800mA 0.45
isa1283as1.pdf
SMALL-SIGNAL TRANSISTOR ISA1283AS1 FOR LOW FREQUENCY POWOR AMPLIFY APPLICATIONSILICON PNP EPITAXIAL TYPEDESCRIPTION OUTLINE DRAWING Unit ISA1283AS1 is a silicon PNP epitaxial type transistor 4.0 designed for relay drive or power supply application. Complementary with 2SC5482. FEATURE 0.1 High voltage VCEO=-60V High collector current. IC=-1A 0.
isa1286as1.pdf
SMALL-SIGNAL TRANSISTOR ISA1286AS1 FOR SMALL TYPE MOTOR, PLUNGER DRIVE APPLICATIONSILICON PNP EPITAXIAL TYPEDESCRIPTION OUTLINE DRAWING Unit ISA1286AS1 is a silicon PNP epitaxial type transistor. 4.0 Designed with high collector current and high hFE. Complementary with 2SC5484. FEATURE 0.1 High hFE hFE=400 to 800 High collector current. (IC=-1.5
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
