INC6007AP1
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: INC6007AP1
Código: BK
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.5
W
Tensión colector-base (Vcb): 400
V
Tensión colector-emisor (Vce): 400
V
Tensión emisor-base (Veb): 5
V
Corriente del colector DC máxima (Ic): 0.5
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 50
MHz
Capacitancia de salida (Cc): 10
pF
Ganancia de corriente contínua (hfe): 50
Paquete / Cubierta:
SOT89
Búsqueda de reemplazo de transistor bipolar INC6007AP1
INC6007AP1
Datasheet (PDF)
..1. Size:112K isahaya
inc6007ap1.pdf 
PRELIMINARY INC6007AP1 NoticeThis is not a final specification Some parametric are subject to change. FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPEDESCRIPTION OUTLINE DRAWING UNIT INC6007AP1 is a silicon NPN transistor. 4.6 MAXIt is designed with high voltage. 1.51.6FEATURE Small package for easy mounting.
8.1. Size:142K isahaya
inc6002ac1.pdf
INC6002AC1 FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN TRANSISTOR DESCLIPTION OUTLINE DRAWING Unitmm 2.8 INC6002AC1 is a silicon NPN transistor. 0.65 1.5 0.65 It is designed with high voltage. (1)FEATURE Super mini package for easy mounting. (3) (2)Hige voltage VCEO=300V APPLICATION DC/DC convertor, High voltage switching
8.2. Size:106K isahaya
inc6008ac1.pdf
INC6008AC1PRELIMINARY NoticeThis is not a final specification FOR HIGH CURRENT DRIVE APPLICATIONSome parametric are subject to change. SILICON NPN EPITAXIAL TYPEDESCRIPTION OUTLINE DRAWING UNITmm 2.8 INC6008AC1 is a silicon NPN epitaxial type transistor. 0.65 1.5 0.65 It is designed with high collector current and small VCE(sat). FEATURE Super mini pack
8.3. Size:148K isahaya
inc6006ap1.pdf
INC6006AP1 FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPEDESCRIPTION OUTLINE DRAWING UNIT INC6006AP1 is a silicon NPN transistor. 4.6 MAXIt is designed with high voltage. 1.51.6FEATURE Small package for easy mounting. High voltage VCEO = 160V CE BLow voltage VCE(sat) = 0.2V(MAX) Complementary
8.4. Size:134K isahaya
inc6008ap1.pdf
PRELIMINARY INC6008AP1 NoticeThis is not a final specification Some parametric are subject to change. FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPEDESCRIPTION OUTLINE DRAWING UNIT 4.6 MAX INC6008AP1 is a silicon NPN transistor. 1.51.6It is designed with high voltage. FEATURE Small package for easy mounting
8.5. Size:156K isahaya
inc6006ac1.pdf
INC6006AC1 PRELIMINARY NoticeThis is not a final specification FOR LOW FREQUENCY AMPLIFY APPLICATIONSome parametric are subject to change. SILICON NPN EPITAXIAL TYPEDESCRIPTION OUTLINE DRAWING UNITmm 2.8 INC6006AC1 is a silicon NPN transistor. 0.65 1.5 0.65 It is designed with high voltage. FEATURE Small package for easy mounting. High voltage VCE
8.6. Size:143K isahaya
inc6006as1.pdf
PRELIMINARY INC6006AS1 NoticeThis is not a final specification Some parametric are subject to change. FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPEDESCRIPTION OUTLINE DRAWING UNIT INC6006AS1 is a silicon NPN transistor. 4.0 It is designed with high voltage. FEATURE Small package for easy mounting. 0.1 Hi
8.8. Size:132K isahaya
inc6005ac1.pdf
INC6005AC1FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPEDESCRIPTION OUTLINE DRAWING UNITmm 2.8 INC6005AC1 is a silicon NPN transistor. 0.65 1.5 0.65 It is designed with high voltage. FEATURE Super mini package for easy mounting High voltage VCEO=400V APPLICATION DC/DC convertor, High voltage switching Terminal Connector JE
8.9. Size:134K isahaya
inc6005ap1.pdf
INC6005AP1 FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPEDESCRIPTION OUTLINE DRAWING UNIT INC6005AP1 is a silicon NPN transistor. 4.6 MAXIt is designed with high voltage. 1.51.6FEATURE Small package for easy mounting. CE BHigh voltage VCEO = 400V 0.53 0.4MAX0.48 MAX1.53.0APPLICATION
Otros transistores... 2N3200
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.
