KRC157F . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: KRC157F
Código: FG
Material: Si
Polaridad de transistor: Pre-Biased-NPN
Resistencia de Entrada Base R1 = 10 kOhm
Resistencia Base-Emisor R2 = 47 kOhm
Ratio típica de resistencia R1/R2 = 0.21
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.5 W
Tensión colector-emisor (Vce): 20 V
Tensión emisor-base (Veb): 6 V
Corriente del colector DC máxima (Ic): 0.05 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 120
Paquete / Cubierta: TFSM
Búsqueda de reemplazo de transistor bipolar KRC157F
KRC157F Datasheet (PDF)
krc157f krc158f krc159f.pdf
SEMICONDUCTOR KRC157F KRC159F TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. FEATURES E With Built-in Bias Resistors. B Simplify Circuit Design. Reduce a Quantity of Parts and Manufacturing Process. Thin Fine Pitch Small Package. DIM MILLIMETERS 2 _ A 0.6 + 0.05 3 _ + B 0.8 0.05 C 0.38+0.02/-0.04 1 _
krc157f-krc159f.pdf
SEMICONDUCTOR KRC157F KRC159F TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. FEATURES E With Built-in Bias Resistors. B Simplify Circuit Design. Reduce a Quantity of Parts and Manufacturing Process. Thin Fine Pitch Small Package. DIM MILLIMETERS 2 _ A 0.6 + 0.05 3 _ + B 0.8 0.05 C 0.38+0.02/-0.0
krc151f krc152f krc153f krc154f.pdf
SEMICONDUCTOR KRC151F KRC154F TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. FEATURES E With Built-in Bias Resistors. B Simplify Circuit Design. Reduce a Quantity of Parts and Manufacturing Process. Thin Fine Pitch Small Package. DIM MILLIMETERS 2 _ A 0.6 + 0.05 3 _ + B 0.8 0.05 C 0.38+0.02/-0.0
krc151f-krc154f.pdf
SEMICONDUCTOR KRC151F KRC154F TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. FEATURES E With Built-in Bias Resistors. B Simplify Circuit Design. Reduce a Quantity of Parts and Manufacturing Process. Thin Fine Pitch Small Package. DIM MILLIMETERS 2 _ A 0.6 + 0.05 3 _ + B 0.8 0.05 C 0.38+0.02/-0.0
Otros transistores... INC5004AP1 , INC5006AC1 , IMX3FRA , IMX8FRA , IMZ1AFRA , IMZ2AFRA , IMZ88 , KRC152F , TIP35C , KRC158F , KTA1050 , INA5001AC1 , INA5001AP1 , INA5002AC1 , INA5002AP1 , INA5005AC1 , INA5006AC1 .
History: UMB3N | TV45
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550
Popular searches
tip31a datasheet | d882 datasheet | tip29 transistor | s9014 transistor datasheet | 2sa1491 | 2sc1313 datasheet | 2sc984 | 2sa872





